JPS6412585A - Josephson junction device - Google Patents

Josephson junction device

Info

Publication number
JPS6412585A
JPS6412585A JP62167801A JP16780187A JPS6412585A JP S6412585 A JPS6412585 A JP S6412585A JP 62167801 A JP62167801 A JP 62167801A JP 16780187 A JP16780187 A JP 16780187A JP S6412585 A JPS6412585 A JP S6412585A
Authority
JP
Japan
Prior art keywords
electrode
josephson junction
ba2ycu3o7
junction device
crystal structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62167801A
Other languages
Japanese (ja)
Inventor
Kunio Ookawa
Kazuyoshi Kojima
Tetsuya Takami
Kyozo Kanemoto
Teruhito Matsui
Shigemitsu Maruno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62167801A priority Critical patent/JPS6412585A/en
Publication of JPS6412585A publication Critical patent/JPS6412585A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/12—Josephson-effect devices
    • H10N60/124—Josephson-effect devices comprising high-Tc ceramic materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)

Abstract

PURPOSE:To make the operation temperature of a Josephson junction device high by a method wherein a base electrode and a facing electrode are made of Ba2YCu3O7 with an orthorhombic crystal structure and, further, a barrier layer is made of Ba-Y-Cu-O substance. CONSTITUTION:A base electrode 2A and a facing electrode 4A are made of Ba2YCu3O7 with an orthorhombic crystal structure. On the other hand, a barrier layer 3A is made of Ba2YCu3O9-x(x<2) with tetragonal crystal structure pro duced by sintering Ba-Y-Cu-O system material at a low temperature and the number of oxygen defects of the layer 3A is smaller than the numbers of oxygen defects of the electrode 2A and the electrode 4A. As the electrode 2A and the electrode 4A are made of Ba2YCu3O7 showing superconducting transition at a high temperature (about 90 K) and, moreover, the layer 3A is made of the Ba-Y-Cu-O substance, the operation temperature of the Josephson junction device can be elevated and the device is easy to handle and the cooling cost can be reduced.
JP62167801A 1987-07-07 1987-07-07 Josephson junction device Pending JPS6412585A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62167801A JPS6412585A (en) 1987-07-07 1987-07-07 Josephson junction device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62167801A JPS6412585A (en) 1987-07-07 1987-07-07 Josephson junction device

Publications (1)

Publication Number Publication Date
JPS6412585A true JPS6412585A (en) 1989-01-17

Family

ID=15856360

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62167801A Pending JPS6412585A (en) 1987-07-07 1987-07-07 Josephson junction device

Country Status (1)

Country Link
JP (1) JPS6412585A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0368180A (en) * 1989-08-07 1991-03-25 Nippon Telegr & Teleph Corp <Ntt> Superconductive junction element
AU625159B2 (en) * 1989-03-31 1992-07-02 Sumimoto Electric Industries Ltd Tunnel junction type josephson device and method for fabricating the same
US5747427A (en) * 1991-11-15 1998-05-05 Hokkaido Electric Power Co., Inc. Process for forming a semiconductive thin film containing a junction

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU625159B2 (en) * 1989-03-31 1992-07-02 Sumimoto Electric Industries Ltd Tunnel junction type josephson device and method for fabricating the same
EP0390704B1 (en) * 1989-03-31 1998-12-23 Sumitomo Electric Industries, Ltd. Tunnel junction type Josephson device and method for fabricating the same
US6157044A (en) * 1989-03-31 2000-12-05 Sumitomo Electric Industries, Ltd. Tunnel junction type josephson device
JPH0368180A (en) * 1989-08-07 1991-03-25 Nippon Telegr & Teleph Corp <Ntt> Superconductive junction element
US5747427A (en) * 1991-11-15 1998-05-05 Hokkaido Electric Power Co., Inc. Process for forming a semiconductive thin film containing a junction

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