JPS6413773A - Manufacture of pressure transducer - Google Patents
Manufacture of pressure transducerInfo
- Publication number
- JPS6413773A JPS6413773A JP16856987A JP16856987A JPS6413773A JP S6413773 A JPS6413773 A JP S6413773A JP 16856987 A JP16856987 A JP 16856987A JP 16856987 A JP16856987 A JP 16856987A JP S6413773 A JPS6413773 A JP S6413773A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thin
- section
- cavity region
- phosphorus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 abstract 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract 2
- 239000011574 phosphorus Substances 0.000 abstract 2
- 238000007493 shaping process Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Landscapes
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
PURPOSE:To reduce cost by forming a pressure detecting section such as a diaphragm into a substrate while shaping a reference pressure chamber. CONSTITUTION:Phosphorus is implanted into a section 30 as a cavity region in an Si substrate 20 so that resistance is brought to a specified value or less. Phosphorus is further implanted to a section 31 as a groove so that resistance is brought to a fixed value or less. A lower thin-film 21 consisting of SiO2, Si3N4 or the like is shaped so as to sufficiently coat sections 30, 31, and a window 32 is formed. When the section 30 is etched through the window 32 and the section 31, a groove 27 and a cavity region 25 are formed. A ventilating hole 33 is clogged by shaping an insulating thin-film 222, and the cavity region 25 is formed in an airtight manner. A poly Si film is shaped onto the surface of the thin-film 222, and only a predetermined region is left through photoetching, thus forming a piezoresistor 23. A thin-film 221 is shaped onto the surface, and a hole is bored to a part of the thin-film 221. A metallic wiring 24 is formed through patterning. Accordingly, a device having simple structure and high accuracy and reliability can be formed by using a normal process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16856987A JPH0797643B2 (en) | 1987-07-08 | 1987-07-08 | Method for manufacturing pressure transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16856987A JPH0797643B2 (en) | 1987-07-08 | 1987-07-08 | Method for manufacturing pressure transducer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6413773A true JPS6413773A (en) | 1989-01-18 |
| JPH0797643B2 JPH0797643B2 (en) | 1995-10-18 |
Family
ID=15870471
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16856987A Expired - Fee Related JPH0797643B2 (en) | 1987-07-08 | 1987-07-08 | Method for manufacturing pressure transducer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0797643B2 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04143627A (en) * | 1990-10-05 | 1992-05-18 | Yamatake Honeywell Co Ltd | Capacitance type pressure sensor and manufacture thereof |
| EP0780675A1 (en) * | 1995-12-20 | 1997-06-25 | Motorola, Inc. | Sensor and method of fabrication |
| WO1998023935A1 (en) * | 1996-11-28 | 1998-06-04 | Siemens Aktiengesellschaft | Process for producing micromechanical sensors |
| US5834333A (en) * | 1995-06-07 | 1998-11-10 | Ssi Technologies, Inc. | Transducer having a resonating silicon beam and method for forming same |
| US6877383B2 (en) | 1998-03-31 | 2005-04-12 | Hitachi, Ltd. | Capacitive type pressure sensor |
| JP2009296569A (en) * | 2008-05-02 | 2009-12-17 | Canon Inc | Capacitive electromechanical transducer device manufacturing method and capacitive electromechanical transducer device |
| JP2012222515A (en) * | 2011-04-06 | 2012-11-12 | Canon Inc | Electromechanical conversion device and manufacturing method therefor |
| JP2016096576A (en) * | 2016-01-18 | 2016-05-26 | キヤノン株式会社 | Electromechanical transducer and method for manufacturing the same |
-
1987
- 1987-07-08 JP JP16856987A patent/JPH0797643B2/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04143627A (en) * | 1990-10-05 | 1992-05-18 | Yamatake Honeywell Co Ltd | Capacitance type pressure sensor and manufacture thereof |
| US5834333A (en) * | 1995-06-07 | 1998-11-10 | Ssi Technologies, Inc. | Transducer having a resonating silicon beam and method for forming same |
| EP0780675A1 (en) * | 1995-12-20 | 1997-06-25 | Motorola, Inc. | Sensor and method of fabrication |
| US5883420A (en) * | 1995-12-20 | 1999-03-16 | Motorola, Inc. | Sensor device having a pathway and a sealed cavity |
| WO1998023935A1 (en) * | 1996-11-28 | 1998-06-04 | Siemens Aktiengesellschaft | Process for producing micromechanical sensors |
| US6877383B2 (en) | 1998-03-31 | 2005-04-12 | Hitachi, Ltd. | Capacitive type pressure sensor |
| JP2009296569A (en) * | 2008-05-02 | 2009-12-17 | Canon Inc | Capacitive electromechanical transducer device manufacturing method and capacitive electromechanical transducer device |
| JP2012222515A (en) * | 2011-04-06 | 2012-11-12 | Canon Inc | Electromechanical conversion device and manufacturing method therefor |
| US10583462B2 (en) | 2011-04-06 | 2020-03-10 | Canon Kabushiki Kaisha | Electromechanical transducer and method of producing the same |
| JP2016096576A (en) * | 2016-01-18 | 2016-05-26 | キヤノン株式会社 | Electromechanical transducer and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0797643B2 (en) | 1995-10-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |