JPS6415733A - Photosensitive composition and pattern forming method with said composition - Google Patents
Photosensitive composition and pattern forming method with said compositionInfo
- Publication number
- JPS6415733A JPS6415733A JP62170889A JP17088987A JPS6415733A JP S6415733 A JPS6415733 A JP S6415733A JP 62170889 A JP62170889 A JP 62170889A JP 17088987 A JP17088987 A JP 17088987A JP S6415733 A JPS6415733 A JP S6415733A
- Authority
- JP
- Japan
- Prior art keywords
- composition
- compsn
- compd
- polymer
- forming method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
PURPOSE:To enable the treatment of an Si-contg. resist with oxygen plasma by using a specified compsn. CONSTITUTION:The titled compsn. contains a polymer (A) having carbon-carbon unsaturated bonds, a compd. (B) having an Si-H group and subliming or gasifying from the solid state at room temp. when heat treated and an optical radical generator (C). A resist film is formed with the compsn., patternwise exposed, heat treated and treated with oxygen plasma to form a pattern. The polymer A may be used polydiallyl phthalate, the compd. B may be used triphenylsilane and the radical generator C may be used benzophenone. Cellosolve acetate may be used as a solvent and a sensitizer may be used in combination with those components as desired.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62170889A JPS6415733A (en) | 1987-07-10 | 1987-07-10 | Photosensitive composition and pattern forming method with said composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62170889A JPS6415733A (en) | 1987-07-10 | 1987-07-10 | Photosensitive composition and pattern forming method with said composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6415733A true JPS6415733A (en) | 1989-01-19 |
Family
ID=15913198
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62170889A Pending JPS6415733A (en) | 1987-07-10 | 1987-07-10 | Photosensitive composition and pattern forming method with said composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6415733A (en) |
-
1987
- 1987-07-10 JP JP62170889A patent/JPS6415733A/en active Pending
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