JPS6416018A - Output buffer for mos semiconductor integrated circuit - Google Patents

Output buffer for mos semiconductor integrated circuit

Info

Publication number
JPS6416018A
JPS6416018A JP62172128A JP17212887A JPS6416018A JP S6416018 A JPS6416018 A JP S6416018A JP 62172128 A JP62172128 A JP 62172128A JP 17212887 A JP17212887 A JP 17212887A JP S6416018 A JPS6416018 A JP S6416018A
Authority
JP
Japan
Prior art keywords
voltage
threshold
buffer
output
driven
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62172128A
Other languages
Japanese (ja)
Inventor
Hajime Shimada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62172128A priority Critical patent/JPS6416018A/en
Publication of JPS6416018A publication Critical patent/JPS6416018A/en
Pending legal-status Critical Current

Links

Landscapes

  • Logic Circuits (AREA)
  • Electronic Switches (AREA)

Abstract

PURPOSE:To decrease the energy dissipated as an electromagnetic wave by providing >=1 threshold circuit connected in feedback from the output side, and using the circuit to drive a buffer, thereby relaxing the steep change in an output voltage waveform without lowering the driving capability. CONSTITUTION:Threshold circuits 2, 4 having threshold values VT1, VT2 and plural buffers 1, 3, 5 driving an output load are provided. That is, the buffer 1 is driven by a voltage applied to an input terminal 10a and the buffer 3 is driven by a reverse voltage to a voltage so far when the voltage appearing at the output terminal 10b reaches the threshold value VT1 by the threshold circuit 2. Moreover, when the voltage appearing at an output terminal 10b reaches the threshold value VT2 by the threshold circuit 4, the buffer 5 is driven by a reverse voltage. Thus, the steep portion in the output voltage waveforms 6-9 is relaxed.
JP62172128A 1987-07-09 1987-07-09 Output buffer for mos semiconductor integrated circuit Pending JPS6416018A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62172128A JPS6416018A (en) 1987-07-09 1987-07-09 Output buffer for mos semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62172128A JPS6416018A (en) 1987-07-09 1987-07-09 Output buffer for mos semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS6416018A true JPS6416018A (en) 1989-01-19

Family

ID=15936082

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62172128A Pending JPS6416018A (en) 1987-07-09 1987-07-09 Output buffer for mos semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS6416018A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02224268A (en) * 1989-12-29 1990-09-06 Seiko Epson Corp semiconductor equipment
JPH03217119A (en) * 1990-01-23 1991-09-24 Matsushita Electric Ind Co Ltd Cmos buffer circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02224268A (en) * 1989-12-29 1990-09-06 Seiko Epson Corp semiconductor equipment
JPH03217119A (en) * 1990-01-23 1991-09-24 Matsushita Electric Ind Co Ltd Cmos buffer circuit

Similar Documents

Publication Publication Date Title
JPS5292321A (en) Power supply circuit
EP0369448A3 (en) Drive circuit for use with voltage-driven semiconductor device
JPS55136726A (en) High voltage mos inverter and its drive method
KR930003556A (en) Progressive Turn-On CMOS Driver
EP0375250A3 (en) Electronic ringing signal generator
NO964913L (en) Device for power inverter connection
JPS6469264A (en) Dc/dc converter
WO1993000744A1 (en) A 0-100 % duty cycle, transformer isolated fet driver
CA2223227A1 (en) Power converter
JPS5688675A (en) Rectifier
WO2002074018A3 (en) El driver for small semiconductor die
ZA978695B (en) Method and device for correcting the DC offset of a converter.
JPS6416018A (en) Output buffer for mos semiconductor integrated circuit
EP0905896A3 (en) Output buffer circuit with 50% Duty Cycle
WO1998019398A3 (en) An integrated half-bridge timing control circuit
CA2243618A1 (en) Method and device for driving a turn-off thyristor
JPS52147753A (en) Switching type dc stabilized power supply
US6870405B2 (en) Method for driving an insulated gate semiconductor device using a short duration pulse
TW357487B (en) Drive circuit for a fieldeffect controlled power semiconductor component
JPS64817A (en) Logic circuit
JPS5717223A (en) Semiconductor integrated circuit
JPS6416017A (en) Output buffer for mos semiconductor integrated circuit
JPS5860828A (en) Mos-fet driving circuit
JPS6416016A (en) Output buffer for mos semiconductor integrated circuit
WO2001063763A2 (en) Drive circuit and method for mosfet