JPS6417471A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6417471A JPS6417471A JP17284087A JP17284087A JPS6417471A JP S6417471 A JPS6417471 A JP S6417471A JP 17284087 A JP17284087 A JP 17284087A JP 17284087 A JP17284087 A JP 17284087A JP S6417471 A JPS6417471 A JP S6417471A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- titanium
- prevent
- heat treatment
- silicide layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 abstract 3
- 238000010438 heat treatment Methods 0.000 abstract 3
- 229910021344 molybdenum silicide Inorganic materials 0.000 abstract 3
- 229910021341 titanium silicide Inorganic materials 0.000 abstract 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 230000002159 abnormal effect Effects 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To prevent titanium atoms in titanium silicide from invading a gate oxide film during heat treatment by providing a molybdenum silicide layer between a polycrystalline silicon layer for forming a gate electrode and a titanium silicide layer. CONSTITUTION:In a MOS transistor in which source, drain regions 12, a gate oxide film 14 and a gate electrode 15 are formed on a semiconductor substrate 10, the electrode 15 is formed of a polycrystalline silicon layer 16, a molybdenum silicide layer 17, a titanium silicide layer 18 and a molybdenum silicide layer 19. The layer 17 prevents titanium atoms in the layer 18 from diffusing in the layer 16 during heat treating from arriving at the film 14. As a result, it can prevent a gate breakdown strength after a heat temperature heat treatment from deteriorating. Further, the layer 19 is provided to prevent the surface of the layer 18 from generating a roughness or an abnormal oxidation due to the heat treatment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17284087A JPS6417471A (en) | 1987-07-13 | 1987-07-13 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17284087A JPS6417471A (en) | 1987-07-13 | 1987-07-13 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6417471A true JPS6417471A (en) | 1989-01-20 |
Family
ID=15949307
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17284087A Pending JPS6417471A (en) | 1987-07-13 | 1987-07-13 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6417471A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5559314A (en) * | 1993-09-22 | 1996-09-24 | Kabushiki Kaisha Toshiba | Recording medium using reversible recording material and method of processing record to recording medium |
| US6774023B1 (en) * | 1992-05-30 | 2004-08-10 | Samsung Electronics Co., Ltd. | Method of manufacturing a semiconductor device having a multilayer structure including a dual-layer silicide |
-
1987
- 1987-07-13 JP JP17284087A patent/JPS6417471A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6774023B1 (en) * | 1992-05-30 | 2004-08-10 | Samsung Electronics Co., Ltd. | Method of manufacturing a semiconductor device having a multilayer structure including a dual-layer silicide |
| US5559314A (en) * | 1993-09-22 | 1996-09-24 | Kabushiki Kaisha Toshiba | Recording medium using reversible recording material and method of processing record to recording medium |
| US5597998A (en) * | 1993-09-22 | 1997-01-28 | Kabushiki Kaisha Toshiba | Recording medium using reversible recording material and method of processing record to recording medium |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR890012402A (en) | Manufacturing Method of Semiconductor Device | |
| EP0723286A3 (en) | Field-effect transistor and manufacture method thereof | |
| TW241384B (en) | ||
| US5677213A (en) | Method for forming a semiconductor device having a shallow junction and a low sheet resistance | |
| KR890003048A (en) | Manufacturing method of MOS semiconductor device | |
| JPS6417471A (en) | Semiconductor device | |
| KR960043036A (en) | Process for forming a refractory metal silicide film having a uniform thickness | |
| KR970703615A (en) | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH BiCMOS CIRCUIT | |
| JPS6417470A (en) | Semiconductor device | |
| KR880001956B1 (en) | Manufacturing method of semiconductor integrated circuit | |
| JPS54134579A (en) | Mis semiconductor device | |
| KR100256803B1 (en) | Method for forming shallow junction in semiconductor device | |
| KR970023745A (en) | Method for Forming Refractory Metal Silicide Layer | |
| JPS6465875A (en) | Thin film transistor and manufacture thereof | |
| JPS57207375A (en) | Manufacture of semiconductor device | |
| JPS57124477A (en) | Manufacture of semiconductor device | |
| KR950012645A (en) | Method of manufacturing thin film transistor of semiconductor device | |
| JPS5559773A (en) | Method of fabricating mis semiconductor device | |
| KR970054418A (en) | Manufacturing method of MOS field effect transistor | |
| JPS57204170A (en) | Manufacture of mos type field effect transistor | |
| JPS6446976A (en) | Manufacture of semiconductor integrated circuit device | |
| KR940003086A (en) | Method of manufacturing thin film transistor of semiconductor device | |
| KR930022591A (en) | Manufacturing method of morph transistor | |
| KR970013114A (en) | Junction Formation Method for Semiconductor Devices | |
| JPS6450565A (en) | Mos semiconductor integrated circuit device and manufacture thereof |