JPS6418991A - Formation of diamond thin film - Google Patents

Formation of diamond thin film

Info

Publication number
JPS6418991A
JPS6418991A JP62173229A JP17322987A JPS6418991A JP S6418991 A JPS6418991 A JP S6418991A JP 62173229 A JP62173229 A JP 62173229A JP 17322987 A JP17322987 A JP 17322987A JP S6418991 A JPS6418991 A JP S6418991A
Authority
JP
Japan
Prior art keywords
substrate
carbon
contg
raw material
nuclei
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62173229A
Other languages
Japanese (ja)
Inventor
Akira Ueno
Makoto Kitahata
Tomiyo Fukuda
Osamu Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62173229A priority Critical patent/JPS6418991A/en
Publication of JPS6418991A publication Critical patent/JPS6418991A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To accomplish formation of a high-quality diamond thin film at high speed in good reproducibility, by forming diamond crystal nuclei on a substrate surface through PVD process followed by growth of said nuclei through CVD process. CONSTITUTION:Ar, H2 etc. is introduced through an inlet 19 into an ion source 11, and ion beams 12 having resulted from accelerating ions to a specified energy level by electric discharge is irradiated on a carbon-contg. target 13 to feed carbon-contg. particles onto the surface of a substrate 14 through sputtering to create diamond nuclei. The unnecessary graphitic carbon concurrently formed is eliminated by the simultaneous irradiation of beams 12 at a specified angle of incidence theta on the surface of said substrate. Thence, H2 as the reaction gas and methane etc. as the carbon-contg. raw material are introduced through a gas plus raw material inlet 17 and a microwave through a waveguide 16 at a specified output to generate a plasma to effect reaction between the reaction gas and the raw material, and then the above-mentioned crystal nuclei created by the PVD process are made to grow, through CVD process, on the substrate 14 surface heated by a heater 10.
JP62173229A 1987-07-10 1987-07-10 Formation of diamond thin film Pending JPS6418991A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62173229A JPS6418991A (en) 1987-07-10 1987-07-10 Formation of diamond thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62173229A JPS6418991A (en) 1987-07-10 1987-07-10 Formation of diamond thin film

Publications (1)

Publication Number Publication Date
JPS6418991A true JPS6418991A (en) 1989-01-23

Family

ID=15956539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62173229A Pending JPS6418991A (en) 1987-07-10 1987-07-10 Formation of diamond thin film

Country Status (1)

Country Link
JP (1) JPS6418991A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0214897A (en) * 1988-07-01 1990-01-18 Asahi Daiyamondo Kogyo Kk Manufacturing method of film diamond
JPH0297486A (en) * 1988-10-02 1990-04-10 Canon Inc Diamond film and its manufacturing method
JPH02289492A (en) * 1989-04-28 1990-11-29 Mitsubishi Materials Corp Formation of artificial diamond coating film
US5082359A (en) * 1989-11-28 1992-01-21 Epion Corporation Diamond films and method of growing diamond films on nondiamond substrates
US5200231A (en) * 1989-08-17 1993-04-06 U.S. Philips Corporation Method of manufacturing polycrystalline diamond layers
US8039108B2 (en) * 2006-02-10 2011-10-18 Toyota Jidosha Kabushiki Kaisha Member for cavitation erosion resistance and method for manufacturing same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0214897A (en) * 1988-07-01 1990-01-18 Asahi Daiyamondo Kogyo Kk Manufacturing method of film diamond
JPH0297486A (en) * 1988-10-02 1990-04-10 Canon Inc Diamond film and its manufacturing method
JPH02289492A (en) * 1989-04-28 1990-11-29 Mitsubishi Materials Corp Formation of artificial diamond coating film
US5200231A (en) * 1989-08-17 1993-04-06 U.S. Philips Corporation Method of manufacturing polycrystalline diamond layers
US5082359A (en) * 1989-11-28 1992-01-21 Epion Corporation Diamond films and method of growing diamond films on nondiamond substrates
US8039108B2 (en) * 2006-02-10 2011-10-18 Toyota Jidosha Kabushiki Kaisha Member for cavitation erosion resistance and method for manufacturing same

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