JPS6421073A - Ion implanting device - Google Patents

Ion implanting device

Info

Publication number
JPS6421073A
JPS6421073A JP62176880A JP17688087A JPS6421073A JP S6421073 A JPS6421073 A JP S6421073A JP 62176880 A JP62176880 A JP 62176880A JP 17688087 A JP17688087 A JP 17688087A JP S6421073 A JPS6421073 A JP S6421073A
Authority
JP
Japan
Prior art keywords
ions
accelerating
vacuum
ion implanting
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62176880A
Other languages
Japanese (ja)
Other versions
JPH0823067B2 (en
Inventor
Tomoshige Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissin Electric Co Ltd
Original Assignee
Nissin Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissin Electric Co Ltd filed Critical Nissin Electric Co Ltd
Priority to JP62176880A priority Critical patent/JPH0823067B2/en
Publication of JPS6421073A publication Critical patent/JPS6421073A/en
Publication of JPH0823067B2 publication Critical patent/JPH0823067B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

PURPOSE:To enable the acceleration of many kinds of ions as well as to obtain ions having high energy and large electric current by arranging an electrostatic accelerating tube, a linear accelerator, a charge transducer, etc., in a device for implanting accelerated ions into a target in vacuum. CONSTITUTION:This ion implanting device is composed essentially of an ion source 2 from which ions 4 are extracted, an electrostatic accelerating tube 8 for accelerating the ions 4, a linear accelerator 22 for further accelerating the ions 4 in a high frequency electric field, a charge transducer 30 and a gap cavity 38. The accelerated ions 4 are implanted into a target 10 in vacuum. The gap cavity 38 regulates the energy of the ions 4 from the charge transducer 30.
JP62176880A 1987-07-15 1987-07-15 Ion implanter Expired - Lifetime JPH0823067B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62176880A JPH0823067B2 (en) 1987-07-15 1987-07-15 Ion implanter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62176880A JPH0823067B2 (en) 1987-07-15 1987-07-15 Ion implanter

Publications (2)

Publication Number Publication Date
JPS6421073A true JPS6421073A (en) 1989-01-24
JPH0823067B2 JPH0823067B2 (en) 1996-03-06

Family

ID=16021386

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62176880A Expired - Lifetime JPH0823067B2 (en) 1987-07-15 1987-07-15 Ion implanter

Country Status (1)

Country Link
JP (1) JPH0823067B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002104242A (en) * 2000-08-29 2002-04-10 Renault Body assembly
JP2009001037A (en) * 2007-06-19 2009-01-08 Honda Motor Co Ltd Body front structure
CN114600561A (en) * 2019-08-30 2022-06-07 Tae技术公司 System, apparatus and method for high quality ion beam formation
JP2022545059A (en) * 2019-08-19 2022-10-25 アクセリス テクノロジーズ， インコーポレイテッド Method for improving energy and beam current in RF-based implanters
WO2025187303A1 (en) * 2024-03-06 2025-09-12 住友重機械イオンテクノロジー株式会社 Ion implantation device and ion extraction device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6662549B2 (en) 2016-11-21 2020-03-11 住友重機械イオンテクノロジー株式会社 Ion implantation method and ion implantation apparatus
CA3148953A1 (en) 2019-08-30 2021-03-04 Vladislav VEKSELMAN Systems, devices, and methods for beam position monitoring and beam imaging
US11923169B2 (en) * 2020-02-07 2024-03-05 Axcelis Technologies, Inc. Apparatus and method for metal contamination control in an ion implantation system using charge stripping mechanism

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002104242A (en) * 2000-08-29 2002-04-10 Renault Body assembly
JP2009001037A (en) * 2007-06-19 2009-01-08 Honda Motor Co Ltd Body front structure
JP2022545059A (en) * 2019-08-19 2022-10-25 アクセリス テクノロジーズ， インコーポレイテッド Method for improving energy and beam current in RF-based implanters
CN114600561A (en) * 2019-08-30 2022-06-07 Tae技术公司 System, apparatus and method for high quality ion beam formation
WO2025187303A1 (en) * 2024-03-06 2025-09-12 住友重機械イオンテクノロジー株式会社 Ion implantation device and ion extraction device

Also Published As

Publication number Publication date
JPH0823067B2 (en) 1996-03-06

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