JPS6421931A - Semiconductor substrate - Google Patents
Semiconductor substrateInfo
- Publication number
- JPS6421931A JPS6421931A JP62177792A JP17779287A JPS6421931A JP S6421931 A JPS6421931 A JP S6421931A JP 62177792 A JP62177792 A JP 62177792A JP 17779287 A JP17779287 A JP 17779287A JP S6421931 A JPS6421931 A JP S6421931A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- nickel
- thickness
- layers
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/69—Insulating materials thereof
- H10W70/692—Ceramics or glasses
Landscapes
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Die Bonding (AREA)
Abstract
PURPOSE:To obtain a highly heat conductive substrate characterized by high adhesion of laminated layers and improved wettability with solder or brazing filler, metal by forming a first layer comprising titanium, chromium and the like on the surface of the substrate comprising aluminum nitride, forming a second layer comprising a thin film of nickel or copper, forming a third layer comprising nickel or copper, and laminating these layers. CONSTITUTION:A first layer comprising one or more kinds of titanium, chromiun, molybdenum and tungsten is formed on the surface of a substrate comprising aluminum nitride. A second layer comprising a thin film of nickel or copper is formed. A third layer comprising nickel or copper is formed. These layers are sequentially laminated. It is desirable that said first and second layers are formed by a physical evaporating means and the third layer is formed by a plating means. For example, the chromium layer having a thickness of 2,000Angstrom and the nickel layer having a thickness of 5,000Angstrom are sequentially formed as the first and second layers by sputtering method on the surface of the sintered aluminum nitride plate having a thickness of 2mm. As the third layer, electrolytic plating of nickel is performed to a thickness of 4mum. As an uppermost layer, electrolytic plating of gold is performed to a thickness of 0.5mum, and a semiconductor substrate is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62177792A JPS6421931A (en) | 1987-07-16 | 1987-07-16 | Semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62177792A JPS6421931A (en) | 1987-07-16 | 1987-07-16 | Semiconductor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6421931A true JPS6421931A (en) | 1989-01-25 |
Family
ID=16037179
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62177792A Pending JPS6421931A (en) | 1987-07-16 | 1987-07-16 | Semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6421931A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05121862A (en) * | 1991-10-30 | 1993-05-18 | Fujitsu Ltd | Indium resistant solder pattern |
-
1987
- 1987-07-16 JP JP62177792A patent/JPS6421931A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05121862A (en) * | 1991-10-30 | 1993-05-18 | Fujitsu Ltd | Indium resistant solder pattern |
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