JPS6422068U - - Google Patents

Info

Publication number
JPS6422068U
JPS6422068U JP1987127526U JP12752687U JPS6422068U JP S6422068 U JPS6422068 U JP S6422068U JP 1987127526 U JP1987127526 U JP 1987127526U JP 12752687 U JP12752687 U JP 12752687U JP S6422068 U JPS6422068 U JP S6422068U
Authority
JP
Japan
Prior art keywords
layer
type
semiconductor
groove
laser diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1987127526U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS6422068U publication Critical patent/JPS6422068U/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2202—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure by making a groove in the upper laser structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Description

【図面の簡単な説明】
第１図は、公知の２重へテロ構造−プレーナ形
ストライプレーザの断面略図、第２図は狭いが横
多モードレーザの光／電流−特性曲線を示すグラ
フ図、第３図〜第７図は本考案の半導体レーザを
製造工程順に示す断面略図、第８図は本考案の半
導体レーザで測定された光出力−電流性曲線のグ
ラフ図、第９図は本考案の半導体レーザの光強度
とレーザ活性帯域の関係を示すグラフ図である。 １……サブストレート、２，４，５，６……半
導体層、３……レーザ活性層、７……フオトレジ
ストマスク、８……拡散前面、９，１０……電極
、１１……ヒートシンク、１２……インジウム層
、１３，１４……ＰＮ接合。

Claims (1)

  1. 【実用新案登録請求の範囲】 １ 互いに逆の導電型を有する層の間にレーザ活
    性層が設けられている、サブストレート上に形成
    されている層列を有するヘテロ構造の半導体レー
    ザダイオードであつて、前記層列の、サブストレ
    ートとは反対の方の側において、前記活性層にサ
    ブストレートの側において接している半導体層の
    導電型を有する単結晶の被覆層が形成されており
    、該被覆層において、前記層列の外側から拡散さ
    れた、前記被覆層とは反対の導電型を有する半導
    体領域が設けられており、該領域はストライプ形
    状の、レーザビームの射出面に対して垂直に延在
    する表面帯域において前記被覆層と隣接する半導
    体層との間の境界面を貫通しており、かつ前記レ
    ーザ活性帯域にまで達しており、その結果ダイオ
    ードの順方向に流れる電流が、レーザ活性帯域の
    狭いストライプ状の領域に制限されるようになつ
    ている形式のものにおて、被覆層６は、レーザビ
    ームの射出面に対して垂直方向に延在する溝形状
    の、実質的にＶ字形に形成された凹入部を有して
    おりかつドーピング材料をこのように構成された
    、被覆層６の表面を介して拡散することによつて
    、このようにして構成された表面に相応する拡散
    前面を有する拡散された半導体領域が形成されて
    おり、かつサブストレートの側において被覆層６
    に接して、該被覆層と同じ導電型だがバンド間隔
    が比較的大きい付加層５が設けられておりかつ拡
    散前面８が前記付加層と該層にサブストレートの
    側において隣接する半導体層４との間のｐｎ接合
    に達してなる半導体レーザダイオード。 ２ 単結晶の被覆層６の表面における溝状の凹入
    部が、少なくとも溝の幅のオーダにある深さを有
    する実用新案登録請求の範囲第１項記載の半導体
    レーザダイオード。 ３ 溝の幅が＜３μｍである実用新案登録請求の
    範囲第１項記載の半導体レーザダイオード。 ４ 溝状の凹入部の溝の底部とレーザ活性帯域３
    との間隔が≧２μｍである実用新案登録請求の範
    囲第１項記載の半導体レーザダイオード。 ５ １：ＧａＡＳサブストレート、ｎ形 ２：Ｇａ１−ＸＡｌＸＡｓ層、ｎ形 ３：Ｇａ１−ＹＡｌＹＡｓ層、ｎ形またはＰ
    形、レーザ活性帯域 ４：Ｇａ１−Ｘ′ＡｌＸ′Ａｓ層、Ｐ形 ５：Ｇａ１−Ｘ″ＡｌＸ″Ａｓ層、ｎ形 ６：ＧａＡｓ層、ｎ形 から成る層列１〜６が設けられており、溝状の
    凹入部が層６の表面に形成されており、その際Ｘ
    ，Ｘ′，Ｘ″＞Ｙである実用新案登録請求の範囲
    第１項記載の半導体レーザダイオード。
JP1987127526U 1978-05-20 1987-08-24 Pending JPS6422068U (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2822146A DE2822146C2 (de) 1978-05-20 1978-05-20 Heterostruktur-Halbleiterlaserdiode und Verfahren zur Herstellung einer Heterostruktur-Halbleiterdiode

Publications (1)

Publication Number Publication Date
JPS6422068U true JPS6422068U (ja) 1989-02-03

Family

ID=6039879

Family Applications (2)

Application Number Title Priority Date Filing Date
JP6058679A Pending JPS54152988A (en) 1978-05-20 1979-05-18 Semiconductor laser and method of fabricating same
JP1987127526U Pending JPS6422068U (ja) 1978-05-20 1987-08-24

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP6058679A Pending JPS54152988A (en) 1978-05-20 1979-05-18 Semiconductor laser and method of fabricating same

Country Status (7)

Country Link
US (1) US4278949A (ja)
JP (2) JPS54152988A (ja)
CA (1) CA1128634A (ja)
DE (1) DE2822146C2 (ja)
FR (1) FR2426348B1 (ja)
GB (1) GB2021307B (ja)
IT (1) IT1112931B (ja)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3102875C2 (de) * 1978-05-20 1984-02-16 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Heterostruktur-Halbleiterlaserdiode
DE2933035A1 (de) * 1979-08-16 1981-03-26 Licentia Patent-Verwaltungs-Gmbh, 60596 Frankfurt Halbleiterlaser
DE3002469A1 (de) * 1980-01-24 1981-07-30 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Optische faserleitung zwischen einem halbleiterlaser und einem ersten faserstecker
JPS56110289A (en) * 1980-02-05 1981-09-01 Mitsubishi Electric Corp Manufacture of semiconductor laser element
DE3005645A1 (de) * 1980-02-15 1981-08-20 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur modulation eines halbleiterlasers
DE3012361A1 (de) * 1980-03-29 1981-10-08 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiterlaser
JPS5710992A (en) * 1980-06-24 1982-01-20 Sumitomo Electric Ind Ltd Semiconductor device and manufacture therefor
US4408331A (en) * 1981-03-25 1983-10-04 Bell Telephone Laboratories, Incorporated V-Groove semiconductor light emitting devices
GB2111743B (en) * 1981-08-25 1985-11-27 Handotai Kenkyu Shinkokai Semiconductor laser
NL8104068A (nl) * 1981-09-02 1983-04-05 Philips Nv Halfgeleiderlaser.
NL8201409A (nl) * 1982-04-02 1983-11-01 Philips Nv Halfgeleiderlaser en werkwijze ter vervaardiging ervan.
DE3214700A1 (de) * 1982-04-21 1983-10-27 Licentia Gmbh Optisches nachrichtenuebertragungssystem
JPS5967677A (ja) * 1982-07-01 1984-04-17 Semiconductor Res Found 光集積回路
DE3231732A1 (de) * 1982-08-26 1984-03-01 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Elektrischer kontakt
NL8301331A (nl) * 1983-04-15 1984-11-01 Philips Nv Halfgeleiderinrichting voor het opwekken of versterken van electromagnetische straling en werkwijze ter vervaardiging daarvan.
DE3343051A1 (de) * 1983-11-29 1985-06-05 Licentia Gmbh Verfahren und anordnung zum erzeugen elektrischer steuerimpulse
DE3406361A1 (de) * 1984-02-22 1985-08-29 Telefunken electronic GmbH, 7100 Heilbronn Doppel-heterostruktur-laser und verfahren zu seiner herstellung
US4605942A (en) * 1984-10-09 1986-08-12 At&T Bell Laboratories Multiple wavelength light emitting devices
DE3604294A1 (de) * 1986-02-12 1987-08-13 Telefunken Electronic Gmbh Heterostruktur-halbleiterlaserdioden
DE3604295A1 (de) * 1986-02-12 1987-08-13 Telefunken Electronic Gmbh Heterostruktur-halbleiterlaserdiode
US5770475A (en) * 1996-09-23 1998-06-23 Electronics And Telecommunications Research Institute Crystal growth method for compound semiconductor
RU2146842C1 (ru) * 1999-04-27 2000-03-20 Микаелян Геворк Татевосович Способ изготовления полупроводникового светоизлучающего элемента

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5068288A (ja) * 1973-10-17 1975-06-07
JPS50150392A (ja) * 1974-05-21 1975-12-02
JPS52106283A (en) * 1976-03-03 1977-09-06 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser unit

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1273284A (en) * 1970-10-13 1972-05-03 Standard Telephones Cables Ltd Improvements in or relating to injection lasers
US3946334A (en) * 1973-11-14 1976-03-23 Nippon Electric Company, Limited Injection semiconductor laser device
US3938172A (en) * 1974-05-22 1976-02-10 Rca Corporation Semiconductor injection laser
GB1494518A (en) * 1975-02-04 1977-12-07 Standard Telephones Cables Ltd Heterostructure lasers
JPS52109884A (en) * 1976-03-11 1977-09-14 Nec Corp Stripe type hetero junction semoonductor laser

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5068288A (ja) * 1973-10-17 1975-06-07
JPS50150392A (ja) * 1974-05-21 1975-12-02
JPS52106283A (en) * 1976-03-03 1977-09-06 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser unit

Also Published As

Publication number Publication date
JPS54152988A (en) 1979-12-01
DE2822146C2 (de) 1982-11-25
FR2426348B1 (fr) 1986-03-28
GB2021307A (en) 1979-11-28
US4278949A (en) 1981-07-14
DE2822146A1 (de) 1979-11-22
IT1112931B (it) 1986-01-20
CA1128634A (en) 1982-07-27
IT7922832A0 (it) 1979-05-18
GB2021307B (en) 1982-07-28
FR2426348A1 (fr) 1979-12-14

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