JPS642322A - Plasma etching device - Google Patents

Plasma etching device

Info

Publication number
JPS642322A
JPS642322A JP15865587A JP15865587A JPS642322A JP S642322 A JPS642322 A JP S642322A JP 15865587 A JP15865587 A JP 15865587A JP 15865587 A JP15865587 A JP 15865587A JP S642322 A JPS642322 A JP S642322A
Authority
JP
Japan
Prior art keywords
magnetic field
generated
plasma
etching
vicinity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15865587A
Other languages
Japanese (ja)
Other versions
JPH012322A (en
Inventor
Masanobu Nakano
Kotaro Hamashima
Naoyoshi Fujiwara
Itsuko Hori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP15865587A priority Critical patent/JPS642322A/en
Publication of JPH012322A publication Critical patent/JPH012322A/en
Publication of JPS642322A publication Critical patent/JPS642322A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To make it possible to conduct high-speed etching by a method wherein the etching is conducted by confining the plasma produced by microwave excitation in the vicinity of a placing stand using a magnetic field applying means.
CONSTITUTION: Etching gas is introduced into the quartz tube 2 of a vacuum container 1. A magnetic field is generated by applying a current on coils 6A and 6B, and at the same time, microwaves are generated by a magnetron 10, and plasma is generated by allowing the magnetic field and a high frequency electric field to work on the etching gas. The generated plasma is confined in the etching chamber located in the vicinity of a placing stand 4 by the magnetic field Mmirror and MCUSP for confinement applied by the coils 6A and 6B, high density plasma is formed in the vicinity of a placing stand 4, and the surface of a wafer 5 is etched.
COPYRIGHT: (C)1989,JPO&Japio
JP15865587A 1987-06-25 1987-06-25 Plasma etching device Pending JPS642322A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15865587A JPS642322A (en) 1987-06-25 1987-06-25 Plasma etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15865587A JPS642322A (en) 1987-06-25 1987-06-25 Plasma etching device

Publications (2)

Publication Number Publication Date
JPH012322A JPH012322A (en) 1989-01-06
JPS642322A true JPS642322A (en) 1989-01-06

Family

ID=15676455

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15865587A Pending JPS642322A (en) 1987-06-25 1987-06-25 Plasma etching device

Country Status (1)

Country Link
JP (1) JPS642322A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02132827A (en) * 1988-06-29 1990-05-22 Hitachi Ltd Plasma processing device and method
US5168838A (en) * 1990-10-29 1992-12-08 Mazda Motor Corporation Engine induction system
JPH05160073A (en) * 1991-12-03 1993-06-25 Tokyo Ohka Kogyo Co Ltd Plasma treatment device and method
US5342472A (en) * 1991-08-12 1994-08-30 Tokyo Electron Limited Plasma processing apparatus
JP2002531914A (en) * 1998-12-01 2002-09-24 シリコン ジェネシス コーポレイション Enhanced plasma mode, method and system for plasma immersion ion implantation

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02132827A (en) * 1988-06-29 1990-05-22 Hitachi Ltd Plasma processing device and method
US5168838A (en) * 1990-10-29 1992-12-08 Mazda Motor Corporation Engine induction system
US5342472A (en) * 1991-08-12 1994-08-30 Tokyo Electron Limited Plasma processing apparatus
JPH05160073A (en) * 1991-12-03 1993-06-25 Tokyo Ohka Kogyo Co Ltd Plasma treatment device and method
JP2002531914A (en) * 1998-12-01 2002-09-24 シリコン ジェネシス コーポレイション Enhanced plasma mode, method and system for plasma immersion ion implantation

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