JPS6423536A - Sputter-etching device - Google Patents

Sputter-etching device

Info

Publication number
JPS6423536A
JPS6423536A JP62178997A JP17899787A JPS6423536A JP S6423536 A JPS6423536 A JP S6423536A JP 62178997 A JP62178997 A JP 62178997A JP 17899787 A JP17899787 A JP 17899787A JP S6423536 A JPS6423536 A JP S6423536A
Authority
JP
Japan
Prior art keywords
substrate
plasma
generated
microwaves
cavity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62178997A
Other languages
Japanese (ja)
Inventor
Yutaka Saito
Yasumichi Suzuki
Shunji Sasabe
Kazuhiro Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62178997A priority Critical patent/JPS6423536A/en
Priority to KR1019880008942A priority patent/KR920002864B1/en
Priority to US07/221,272 priority patent/US5021114A/en
Priority to DE3854541T priority patent/DE3854541T2/en
Priority to EP88111684A priority patent/EP0300447B1/en
Publication of JPS6423536A publication Critical patent/JPS6423536A/en
Pending legal-status Critical Current

Links

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To make an etching speed faster while a high-density plasma is generated and to eliminate the damage of a substrate by a method wherein the generation of the plasma and a voltage to be used when ions in the plasma collide with the substrate are controlled independently of each other by using separate power supplied. CONSTITUTION:Microwaves generated by using a microwave generation source 10 are sent to a cavity 12 through a waveguide 11. By adjusting a matching means 13, the cavity 12 is matched to a condition of a cavity resonator of the microwaves; an electric field of the microwaves inside the cavity 12 is enhanced; an atmospheric gas inside a tank supplied into a vacuum tank 1 by using a gas supply means 4 is ionized by the microwaves introduced into the vacuum tank 1 through an introduction window 14; a plasma 15 is generated. Ions in the plasma generated in this manner are accelerated by a voltage generated on a substrate 5 via an etching electrode 6 after the high-frequency electric power has been impressed by a power supply 8 connected to the etching electrode 6; the ions collide with the substrate; a sputter-etching operation is executed. By this setup, it is possible to generate the high-density plasma which is symmetrical with reference to an axis and is stable; an etching speed can be made faster; it is possible to reduce the damage of the substrate.
JP62178997A 1987-07-20 1987-07-20 Sputter-etching device Pending JPS6423536A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP62178997A JPS6423536A (en) 1987-07-20 1987-07-20 Sputter-etching device
KR1019880008942A KR920002864B1 (en) 1987-07-20 1988-07-18 Apparatus for treating matrial by using plasma
US07/221,272 US5021114A (en) 1987-07-20 1988-07-19 Apparatus for treating material by using plasma
DE3854541T DE3854541T2 (en) 1987-07-20 1988-07-20 Method and device for treating a material by plasma.
EP88111684A EP0300447B1 (en) 1987-07-20 1988-07-20 Method and apparatus for treating material by using plasma

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62178997A JPS6423536A (en) 1987-07-20 1987-07-20 Sputter-etching device

Publications (1)

Publication Number Publication Date
JPS6423536A true JPS6423536A (en) 1989-01-26

Family

ID=16058307

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62178997A Pending JPS6423536A (en) 1987-07-20 1987-07-20 Sputter-etching device

Country Status (1)

Country Link
JP (1) JPS6423536A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04128393A (en) * 1990-09-19 1992-04-28 Yuuha Mikakutou Seimitsu Kogaku Kenkyusho:Kk Strain-free precision processing device by radical reaction

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5664437A (en) * 1979-08-22 1981-06-01 Onera (Off Nat Aerospatiale) Method and device for chemically etching integrated circuit by dry process
JPS58100431A (en) * 1981-12-10 1983-06-15 Fujitsu Ltd Plasma etching and device thereof
JPS61107730A (en) * 1984-10-29 1986-05-26 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Compound excitation plasma etching system
JPS63104333A (en) * 1986-10-22 1988-05-09 Oki Electric Ind Co Ltd Dry etching method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5664437A (en) * 1979-08-22 1981-06-01 Onera (Off Nat Aerospatiale) Method and device for chemically etching integrated circuit by dry process
JPS58100431A (en) * 1981-12-10 1983-06-15 Fujitsu Ltd Plasma etching and device thereof
JPS61107730A (en) * 1984-10-29 1986-05-26 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Compound excitation plasma etching system
JPS63104333A (en) * 1986-10-22 1988-05-09 Oki Electric Ind Co Ltd Dry etching method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04128393A (en) * 1990-09-19 1992-04-28 Yuuha Mikakutou Seimitsu Kogaku Kenkyusho:Kk Strain-free precision processing device by radical reaction

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