JPS642387A - Semiconductor diode laser array device - Google Patents

Semiconductor diode laser array device

Info

Publication number
JPS642387A
JPS642387A JP63099295A JP9929588A JPS642387A JP S642387 A JPS642387 A JP S642387A JP 63099295 A JP63099295 A JP 63099295A JP 9929588 A JP9929588 A JP 9929588A JP S642387 A JPS642387 A JP S642387A
Authority
JP
Japan
Prior art keywords
light
grating
laser array
gaalas
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63099295A
Other languages
English (en)
Other versions
JPH012387A (ja
Inventor
Jens Buus
Andrew C Carter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Plessey Overseas Ltd
Original Assignee
Plessey Overseas Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plessey Overseas Ltd filed Critical Plessey Overseas Ltd
Publication of JPH012387A publication Critical patent/JPH012387A/ja
Publication of JPS642387A publication Critical patent/JPS642387A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2027—Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4068—Edge-emitting structures with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP63099295A 1987-04-21 1988-04-21 Semiconductor diode laser array device Pending JPS642387A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB8709312 1987-04-21
GB08709312A GB2203891A (en) 1987-04-21 1987-04-21 Semiconductor diode laser array

Publications (2)

Publication Number Publication Date
JPH012387A JPH012387A (ja) 1989-01-06
JPS642387A true JPS642387A (en) 1989-01-06

Family

ID=10616046

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63099295A Pending JPS642387A (en) 1987-04-21 1988-04-21 Semiconductor diode laser array device

Country Status (5)

Country Link
US (1) US4975923A (ja)
EP (1) EP0288184B1 (ja)
JP (1) JPS642387A (ja)
DE (1) DE3850600D1 (ja)
GB (1) GB2203891A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6489491A (en) * 1987-09-30 1989-04-03 Hitachi Ltd Surface luminous semiconductor laser

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5345466A (en) * 1992-11-12 1994-09-06 Hughes Aircraft Company Curved grating surface emitting distributed feedback semiconductor laser
JPH0750449A (ja) * 1993-08-04 1995-02-21 Furukawa Electric Co Ltd:The 半導体レーザ素子
US5727013A (en) * 1995-10-27 1998-03-10 Wisconsin Alumni Research Foundation Single lobe surface emitting complex coupled distributed feedback semiconductor laser
US5898211A (en) * 1996-04-30 1999-04-27 Cutting Edge Optronics, Inc. Laser diode package with heat sink
US5734672A (en) * 1996-08-06 1998-03-31 Cutting Edge Optronics, Inc. Smart laser diode array assembly and operating method using same
US6061378A (en) * 1997-05-13 2000-05-09 Cutting Edge Optronics, Inc. Multiple resonant cavity solid-state laser
US6055262A (en) * 1997-06-11 2000-04-25 Honeywell Inc. Resonant reflector for improved optoelectronic device performance and enhanced applicability
US5913108A (en) * 1998-04-30 1999-06-15 Cutting Edge Optronics, Inc. Laser diode packaging
US6636538B1 (en) 1999-03-29 2003-10-21 Cutting Edge Optronics, Inc. Laser diode packaging
AU6628700A (en) 1999-08-13 2001-03-13 Wisconsin Alumni Research Foundation Single mode, single lobe surface emitting distributed feedback semiconductor laser
US6905900B1 (en) 2000-11-28 2005-06-14 Finisar Corporation Versatile method and system for single mode VCSELs
US6990135B2 (en) 2002-10-28 2006-01-24 Finisar Corporation Distributed bragg reflector for optoelectronic device
US7065124B2 (en) 2000-11-28 2006-06-20 Finlsar Corporation Electron affinity engineered VCSELs
TWI227799B (en) 2000-12-29 2005-02-11 Honeywell Int Inc Resonant reflector for increased wavelength and polarization control
US6836501B2 (en) 2000-12-29 2004-12-28 Finisar Corporation Resonant reflector for increased wavelength and polarization control
US6727520B2 (en) 2000-12-29 2004-04-27 Honeywell International Inc. Spatially modulated reflector for an optoelectronic device
US6782027B2 (en) 2000-12-29 2004-08-24 Finisar Corporation Resonant reflector for use with optoelectronic devices
DE60100144T2 (de) * 2001-01-08 2004-03-18 Avanex Corp.(N.D.Ges.D.Staates Delaware), Fremont Optische Wellenleitervorrichtung mit Fasergitter und Verfahren zu deren Herstellung
US6700913B2 (en) 2001-05-29 2004-03-02 Northrop Grumman Corporation Low cost high integrity diode laser array
US6885686B2 (en) * 2002-01-18 2005-04-26 Wisconsin Alumni Research Foundation High coherent power, two-dimensional surface-emitting semiconductor diode array laser
US7457340B2 (en) 2002-01-18 2008-11-25 Wisconsin Alumni Research Foundation High coherent power, two-dimensional surface-emitting semiconductor diode array laser
US6965626B2 (en) 2002-09-03 2005-11-15 Finisar Corporation Single mode VCSEL
US6813293B2 (en) 2002-11-21 2004-11-02 Finisar Corporation Long wavelength VCSEL with tunnel junction, and implant
US7298942B2 (en) 2003-06-06 2007-11-20 Finisar Corporation Pluggable optical optic system having a lens fiber stop
US7170919B2 (en) 2003-06-23 2007-01-30 Northrop Grumman Corporation Diode-pumped solid-state laser gain module
US7433381B2 (en) 2003-06-25 2008-10-07 Finisar Corporation InP based long wavelength VCSEL
US7277461B2 (en) 2003-06-27 2007-10-02 Finisar Corporation Dielectric VCSEL gain guide
US7054345B2 (en) 2003-06-27 2006-05-30 Finisar Corporation Enhanced lateral oxidation
US7075962B2 (en) 2003-06-27 2006-07-11 Finisar Corporation VCSEL having thermal management
US6961489B2 (en) 2003-06-30 2005-11-01 Finisar Corporation High speed optical system
US7149383B2 (en) 2003-06-30 2006-12-12 Finisar Corporation Optical system with reduced back reflection
US7210857B2 (en) 2003-07-16 2007-05-01 Finisar Corporation Optical coupling system
US6887801B2 (en) 2003-07-18 2005-05-03 Finisar Corporation Edge bead control method and apparatus
US7495848B2 (en) 2003-07-24 2009-02-24 Northrop Grumman Corporation Cast laser optical bench
US7031363B2 (en) 2003-10-29 2006-04-18 Finisar Corporation Long wavelength VCSEL device processing
US7829912B2 (en) 2006-07-31 2010-11-09 Finisar Corporation Efficient carrier injection in a semiconductor device
US7596165B2 (en) 2004-08-31 2009-09-29 Finisar Corporation Distributed Bragg Reflector for optoelectronic device
US7305016B2 (en) * 2005-03-10 2007-12-04 Northrop Grumman Corporation Laser diode package with an internal fluid cooling channel
US7403552B2 (en) * 2006-03-10 2008-07-22 Wisconsin Alumni Research Foundation High efficiency intersubband semiconductor lasers
US7457338B2 (en) * 2006-04-19 2008-11-25 Wisconsin Alumni Research Foundation Quantum well lasers with strained quantum wells and dilute nitride barriers
US7656915B2 (en) 2006-07-26 2010-02-02 Northrop Grumman Space & Missions Systems Corp. Microchannel cooler for high efficiency laser diode heat extraction
US7408966B2 (en) * 2006-08-18 2008-08-05 Wisconsin Alumni Research Foundation Intersubband quantum box stack lasers
US8031752B1 (en) 2007-04-16 2011-10-04 Finisar Corporation VCSEL optimized for high speed data
US7724791B2 (en) 2008-01-18 2010-05-25 Northrop Grumman Systems Corporation Method of manufacturing laser diode packages and arrays
US8345720B2 (en) 2009-07-28 2013-01-01 Northrop Grumman Systems Corp. Laser diode ceramic cooler having circuitry for control and feedback of laser diode performance
US9590388B2 (en) 2011-01-11 2017-03-07 Northrop Grumman Systems Corp. Microchannel cooler for a single laser diode emitter based system
US8718111B1 (en) * 2011-05-27 2014-05-06 Clemson University Diode laser
CN102611002B (zh) * 2012-03-23 2013-11-27 中国科学院长春光学精密机械与物理研究所 低发散角全布拉格反射波导半导体激光器阵列
US8937976B2 (en) 2012-08-15 2015-01-20 Northrop Grumman Systems Corp. Tunable system for generating an optical pulse based on a double-pass semiconductor optical amplifier
CN113092411B (zh) * 2018-10-12 2022-11-11 上海禾赛科技有限公司 一种基于激光器阵列实现接收光强自稳定的装置及方法
CN110112650B (zh) * 2019-05-13 2020-06-02 苏州长光华芯半导体激光创新研究院有限公司 一种高功率半导体芯片及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3969686A (en) * 1975-03-26 1976-07-13 Xerox Corporation Beam collimation using multiple coupled elements
JPS62172780A (ja) * 1986-01-27 1987-07-29 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザ装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1513573A (en) * 1974-08-22 1978-06-07 Xerox Corp Electrically pumpable feedback solid-state diode laser
US4006432A (en) * 1974-10-15 1977-02-01 Xerox Corporation Integrated grating output coupler in diode lasers
JPS6042890A (ja) * 1983-08-18 1985-03-07 Mitsubishi Electric Corp 面発光形半導体レ−ザ及びその製造方法
JPS60186083A (ja) * 1985-01-31 1985-09-21 Hitachi Ltd 分布帰還形半導体レーザ素子
GB8522308D0 (en) * 1985-09-09 1985-10-16 British Telecomm Semiconductor lasers
US4719635A (en) * 1986-02-10 1988-01-12 Rockwell International Corporation Frequency and phase locking method for laser array
JP2513186B2 (ja) * 1986-07-28 1996-07-03 ソニー株式会社 分布帰還型半導体レ―ザの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3969686A (en) * 1975-03-26 1976-07-13 Xerox Corporation Beam collimation using multiple coupled elements
JPS62172780A (ja) * 1986-01-27 1987-07-29 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザ装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6489491A (en) * 1987-09-30 1989-04-03 Hitachi Ltd Surface luminous semiconductor laser

Also Published As

Publication number Publication date
EP0288184A3 (en) 1989-06-07
GB8709312D0 (en) 1987-05-28
GB2203891A (en) 1988-10-26
DE3850600D1 (de) 1994-08-18
EP0288184A2 (en) 1988-10-26
US4975923A (en) 1990-12-04
EP0288184B1 (en) 1994-07-13

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