JPS6425516A - Epitaxial growth method for semiconductor - Google Patents

Abstract

PURPOSE:To obtain a crystal having excellent crystalline property and substrate interface state, by liquid-phase and vapor-phase epitaxies in an atmosphere required for each growth in the same growing systems continuously or alternately. CONSTITUTION:A furnace core tube 3 is divided into two chambers with a gate valves 5. A gas introducing part 6 and a sliding type boat 7 for growing by an LPE method are arranged on one side. A substrate is slidden with a manipulating rod 8. Then melt back and epitaxial growing are performed. A sliding part 9 of a sliding type boat, on which the substrate 1 is mounted, is made to pass through the opened gate valve 5 by using the manipulating rod in the other chamber for MOVPE growing. Thus the sliding part 9 is set. The gate valve 5 is closed, and the MOVPE growing step is started. Thus the two chambers can maintain the independent vacuum and atmospheric states even if they are provided in the same growing system. The substrate for growing is not exposed to outer air. The epitaxial growings can be continuously or alternately performed by using two kinds of the growing methods without oxidation and mixing of impurities.