JPS6425525A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To improve the steepness at an interface and to make it possible to avoid damage in a semiconductor crystal yielded at the time of ion implantation, by not using ion implantaion for forming a source region, a channel region and a drain region, but forming them by intermittent projection of light intensity at the time of epitaxial layer growing. CONSTITUTION:A GaAs substrate 10 on a susceptor 11 in a reactor 16 is heated with a high frequency coil 15, and raw material gas 12 is supplied. Excimer laser light 13, which is patterned through a mask 14, is projected. Thus epitaxial growing is sequentially performed. For example, when P-type GaAs 2 is epitaxially grown on an S.I.GaAs substrate 1, a crystal is grown under the same manufacturing process conditions of FET elements. Since TMSi is not decomposed in this method, an epitaxial layer is formed. When, excimer laser light 4 is projected through a mask 3, TMSi is decomposed only in the projected region. An N<+> type epitaxial layer 5 is formed in the region, where the excimer laser is projected. A P-type epitaxial layer 6 is formed in the region, where the excimer laser 4 is cut with the mask 3.