JPS6425979A - Sputtering device of planar magnetron system - Google Patents

Sputtering device of planar magnetron system

Info

Publication number
JPS6425979A
JPS6425979A JP11241388A JP11241388A JPS6425979A JP S6425979 A JPS6425979 A JP S6425979A JP 11241388 A JP11241388 A JP 11241388A JP 11241388 A JP11241388 A JP 11241388A JP S6425979 A JPS6425979 A JP S6425979A
Authority
JP
Japan
Prior art keywords
magnetic polar
magnetic
providing
film thickness
magnetomotive forces
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11241388A
Other languages
Japanese (ja)
Inventor
Hide Kobayashi
Katsuo Abe
Tsuneaki Kamei
Hideki Tateishi
Susumu Aiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11241388A priority Critical patent/JPS6425979A/en
Publication of JPS6425979A publication Critical patent/JPS6425979A/en
Pending legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To desirably change the magnetomotive forces of respective magnetic polar bodies and to obtain a sputtered film having distribution of uniform film thickness deposited on an objective substrate for film formation by providing a first-third magnetic polar bodies to the center part of a target material in a vacuum tank, the inner and outer parts around it and controlling them throughly separately. CONSTITUTION:The electrode part of the titled device is constituted by fixing a circular target plate 21 to a packing plate 22 made of copper which is provided with a flow path 34 for cooling to the rear side and made to a cathode e.g. by brazing and providing a magnetic field generating yoke 23, an inner electromagnet coil 24, an outer electromagnet coil 25, a central magnetic polar end 26, an inner magnetic polar end 27, an outer magnetic polar end 28, an electrode support 30, an O-ring 31, a shielding 32 made to an anode and insulating spaces 33 as a means for generating the prescribed magnetic flux distribution in the hollow space on a first main surface of the target plate 21 and providing a first-third magnetic polar bodies controllably so that required magnetomotive forces are generated. Then a sputtered film having uniform film thickness is formed by impressing voltage between the anode 32 and the cathode 22 and changing the magnetomotive forces of respective magnetic polar bodies independently and desirably and performing operation so as to form the required film thickness distribution on an objective substrate for film formation.
JP11241388A 1988-05-11 1988-05-11 Sputtering device of planar magnetron system Pending JPS6425979A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11241388A JPS6425979A (en) 1988-05-11 1988-05-11 Sputtering device of planar magnetron system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11241388A JPS6425979A (en) 1988-05-11 1988-05-11 Sputtering device of planar magnetron system

Publications (1)

Publication Number Publication Date
JPS6425979A true JPS6425979A (en) 1989-01-27

Family

ID=14586021

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11241388A Pending JPS6425979A (en) 1988-05-11 1988-05-11 Sputtering device of planar magnetron system

Country Status (1)

Country Link
JP (1) JPS6425979A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5131818A (en) * 1991-05-07 1992-07-21 Hauhinco Maschinenfabrik G. Hausherr, Jochums Gmbh & Co. Kg High-pressure water pump having a polyetheretherketone cylinder bushing for pure water
CN108796468A (en) * 2017-04-26 2018-11-13 冯·阿登纳资产股份有限公司 vacuum chamber device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS583976A (en) * 1981-06-29 1983-01-10 Hitachi Ltd Method and device for formation of film by sputtering

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS583976A (en) * 1981-06-29 1983-01-10 Hitachi Ltd Method and device for formation of film by sputtering

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5131818A (en) * 1991-05-07 1992-07-21 Hauhinco Maschinenfabrik G. Hausherr, Jochums Gmbh & Co. Kg High-pressure water pump having a polyetheretherketone cylinder bushing for pure water
CN108796468A (en) * 2017-04-26 2018-11-13 冯·阿登纳资产股份有限公司 vacuum chamber device

Similar Documents

Publication Publication Date Title
US4865710A (en) Magnetron with flux switching cathode and method of operation
US4915805A (en) Hollow cathode type magnetron apparatus construction
GB2228268A (en) Facing targets sputtering device
US6146509A (en) Inverted field circular magnetron sputtering device
JPS575871A (en) Cathode part of magnetron type sputtering apparatus
US5277779A (en) Rectangular cavity magnetron sputtering vapor source
US5441614A (en) Method and apparatus for planar magnetron sputtering
JPS6425979A (en) Sputtering device of planar magnetron system
KR19990024033A (en) Cathode arc deposition equipment
JP3411312B2 (en) Magnetron sputter cathode and method of adjusting film thickness distribution
JP3766762B2 (en) Magnetron sputtering method and apparatus
JPS5562164A (en) Sputtering unit
JPS5747870A (en) Magnetron sputtering method for ferromagnetic material
EP0428682A4 (en) Magnetic structure for electron-beam heated evaporation source
JPH0699799B2 (en) Vacuum deposition method
JP2625789B2 (en) Magnetron sputter cathode
JPS58199862A (en) Magnetron type sputtering device
JPH0625845A (en) Sputtering device
JP2580149B2 (en) Spatter equipment
JP2878997B2 (en) Vacuum deposition equipment
US4835789A (en) Electron-beam heated evaporation source
JPS58141387A (en) Sputtering device
JPS59193272A (en) Target and sputtering method in sputtering
JPS63307272A (en) Ion beam sputtering device
CN1004495B (en) Composite magnetron sputtering target and its coating method