JPS64263A - Method for forming high resistance layer by cathode sputtering and device therefor - Google Patents

Method for forming high resistance layer by cathode sputtering and device therefor

Info

Publication number
JPS64263A
JPS64263A JP63065965A JP6596588A JPS64263A JP S64263 A JPS64263 A JP S64263A JP 63065965 A JP63065965 A JP 63065965A JP 6596588 A JP6596588 A JP 6596588A JP S64263 A JPS64263 A JP S64263A
Authority
JP
Japan
Prior art keywords
distance
target
substrate
high resistance
resistance layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63065965A
Other languages
English (en)
Other versions
JPH01263A (ja
JP2609273B2 (ja
Inventor
Peter Wirz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Balzers und Leybold Deutschland Holding AG
Original Assignee
Leybold AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leybold AG filed Critical Leybold AG
Publication of JPS64263A publication Critical patent/JPS64263A/ja
Publication of JPH01263A publication Critical patent/JPH01263A/ja
Application granted granted Critical
Publication of JP2609273B2 publication Critical patent/JP2609273B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP63065965A 1987-03-20 1988-03-22 陰極スパツタによつて高抵抗層を設ける方法および装置 Expired - Lifetime JP2609273B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3709175.1 1987-03-20
DE19873709175 DE3709175A1 (de) 1987-03-20 1987-03-20 Verfahren und vorrichtung zum aufstaeuben hochohmiger schichten durch katodenzerstaeubung

Publications (3)

Publication Number Publication Date
JPS64263A true JPS64263A (en) 1989-01-05
JPH01263A JPH01263A (ja) 1989-01-05
JP2609273B2 JP2609273B2 (ja) 1997-05-14

Family

ID=6323583

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63065965A Expired - Lifetime JP2609273B2 (ja) 1987-03-20 1988-03-22 陰極スパツタによつて高抵抗層を設ける方法および装置

Country Status (5)

Country Link
US (1) US4988422A (ja)
EP (1) EP0282836B1 (ja)
JP (1) JP2609273B2 (ja)
AT (1) ATE81532T1 (ja)
DE (2) DE3709175A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005120411A (ja) * 2003-10-15 2005-05-12 Kenji Sumiyama クラスター製造装置およびクラスター製造方法
JP2011111679A (ja) * 2009-11-24 2011-06-09 Samsung Mobile Display Co Ltd スパッタリング装置
JP2019178367A (ja) * 2018-03-30 2019-10-17 株式会社アルバック スパッタリング装置

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2673807B2 (ja) * 1987-10-30 1997-11-05 パイオニア株式会社 光磁気記録媒体の製造方法
US5281554A (en) * 1991-02-08 1994-01-25 Sharp Kabushiki Kaisha Method for producing a semiconductor device having a tantalum thin film
DE4140862A1 (de) * 1991-12-11 1993-06-17 Leybold Ag Kathodenzerstaeubungsanlage
DE4223505C1 (de) * 1992-07-17 1993-11-04 Fraunhofer Ges Forschung Einrichtung zum aufbringen elektrisch schlecht leitender oder isolierender schichten durch reaktives magnetronsputtern
US5338422A (en) * 1992-09-29 1994-08-16 The Boc Group, Inc. Device and method for depositing metal oxide films
US6605198B1 (en) * 1993-07-22 2003-08-12 Sputtered Films, Inc. Apparatus for, and method of, depositing a film on a substrate
JPH07316810A (ja) * 1994-05-27 1995-12-05 Fuji Xerox Co Ltd スパッタリング装置
DE59505454D1 (de) * 1994-10-14 1999-04-29 Siemens Ag Schutzschicht zum schutz eines bauteils gegen korrosion, oxidation und thermische überbeanspruchung sowie verfahren zu ihrer herstellung
US5591313A (en) * 1995-06-30 1997-01-07 Tabco Technologies, Inc. Apparatus and method for localized ion sputtering
JP3868020B2 (ja) * 1995-11-13 2007-01-17 キヤノンアネルバ株式会社 遠距離スパッタ装置及び遠距離スパッタ方法
KR100391975B1 (ko) * 1996-08-06 2003-11-13 주식회사 코오롱 고순도박막의제조방법
ES2184265T3 (es) * 1997-04-14 2003-04-01 Cemecon Ag Procedimiento y dispositivo de revestimiento por pvd.
US5897753A (en) * 1997-05-28 1999-04-27 Advanced Energy Industries, Inc. Continuous deposition of insulating material using multiple anodes alternated between positive and negative voltages
RU2145362C1 (ru) * 1997-10-16 2000-02-10 Уфимский государственный авиационный технический университет Способ вакуумно-плазменного нанесения покрытий
US6818103B1 (en) 1999-10-15 2004-11-16 Advanced Energy Industries, Inc. Method and apparatus for substrate biasing in multiple electrode sputtering systems
GB0222331D0 (en) * 2002-09-26 2002-10-30 Teer Coatings Ltd A method for depositing multilayer coatings with controlled thickness
US20040250767A1 (en) * 2003-04-21 2004-12-16 Rohm And Haas Electronic Materials, L.L.C. Method and apparatus for coating a substrate using combustion chemical vapor deposition
JP4493284B2 (ja) * 2003-05-26 2010-06-30 キヤノンアネルバ株式会社 スパッタリング装置
ES2302401B2 (es) * 2005-06-03 2009-03-16 Universidad De Alicante Sistema de generacion micro-topografica por pulverizacion catodica.
DE102006028977B4 (de) * 2006-06-23 2012-04-12 Qimonda Ag Sputterdepositions-Vorrichtung
JP2008127615A (ja) * 2006-11-20 2008-06-05 Fujitsu Ltd 薄膜形成方法、薄膜形成装置および積層膜
JP4631940B2 (ja) * 2008-07-10 2011-02-16 セイコーエプソン株式会社 スパッタリング装置、及び液晶装置の製造装置
US8821701B2 (en) 2010-06-02 2014-09-02 Clifton Higdon Ion beam sputter target and method of manufacture
EP2549521A1 (de) * 2011-07-21 2013-01-23 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zur Herstellung partikelarmer Schichten auf Substraten
US8829769B1 (en) 2012-11-09 2014-09-09 Dantam K. Rao Coated keybar to protect electric machines
US20200010948A1 (en) * 2018-07-05 2020-01-09 Beijing Apollo Ding Rong Solar Technology Co., Ltd. Shielded sputter deposition apparatus and method
US20220186357A1 (en) * 2020-11-12 2022-06-16 Ark Power Tech. Corp. Apparatus and method for depositing thin sputtered film

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2324755A1 (fr) * 1975-09-19 1977-04-15 Anvar Dispositif de pulverisation cathodique de grande vitesse de depot
DE2616270C3 (de) * 1976-04-13 1981-01-15 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen einer schweroxidierbaren Schicht auf einem Körper aus einem leichtoxidierenden Metall oder einer entsprechenden Metallegierung
US4278528A (en) * 1979-10-09 1981-07-14 Coulter Systems Corporation Rectilinear sputtering apparatus and method
US4340461A (en) * 1980-09-10 1982-07-20 International Business Machines Corp. Modified RIE chamber for uniform silicon etching
DE3112104A1 (de) * 1981-03-27 1982-10-07 Leybold-Heraeus GmbH, 5000 Köln Verfahren und vorrichtung zum herstellen von elektrisch leitfaehigen transparenten oxidschichten
CA1155798A (en) * 1981-03-30 1983-10-25 Shmuel Maniv Reactive deposition method and apparatus
DE3331707A1 (de) * 1983-09-02 1985-03-21 Leybold-Heraeus GmbH, 5000 Köln Verfahren und vorrichtung zum reaktiven aufstaeuben von verbindungen von metallen und halbleitern
DE3521053A1 (de) * 1985-06-12 1986-12-18 Leybold-Heraeus GmbH, 5000 Köln Vorrichtung zum aufbringen duenner schichten auf ein substrat

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005120411A (ja) * 2003-10-15 2005-05-12 Kenji Sumiyama クラスター製造装置およびクラスター製造方法
JP2011111679A (ja) * 2009-11-24 2011-06-09 Samsung Mobile Display Co Ltd スパッタリング装置
US9034156B2 (en) 2009-11-24 2015-05-19 Samsung Display Co., Ltd. Sputtering apparatus
JP2019178367A (ja) * 2018-03-30 2019-10-17 株式会社アルバック スパッタリング装置

Also Published As

Publication number Publication date
US4988422A (en) 1991-01-29
EP0282836A3 (en) 1989-07-26
DE3709175A1 (de) 1988-09-29
ATE81532T1 (de) 1992-10-15
EP0282836B1 (de) 1992-10-14
EP0282836A2 (de) 1988-09-21
DE3875263D1 (de) 1992-11-19
JP2609273B2 (ja) 1997-05-14

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