JPS6428809A - Laser annealing device - Google Patents
Laser annealing deviceInfo
- Publication number
- JPS6428809A JPS6428809A JP18497987A JP18497987A JPS6428809A JP S6428809 A JPS6428809 A JP S6428809A JP 18497987 A JP18497987 A JP 18497987A JP 18497987 A JP18497987 A JP 18497987A JP S6428809 A JPS6428809 A JP S6428809A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- laser beam
- cover
- semiconductor wafer
- annealing device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To make the temperature distribution uniform and to prevent a semiconductor wafer from contamination caused by a wind by a method wherein a transparent cover of a very simple structure is provided, and it is used for covering the semiconductor wafer. CONSTITUTION:A semiconductor wafer 2 is placed on a laser annealing device, and a cover 3 is provided covering an attracted wafer stage 1. The laser beam 5 such as a continuous oscillating type argon laser beam, for example, is condensed by a lens 4, it is transmitted through a cover 3, which transmits the laser beam 5, and projected on the wafer 2. The cover 3 is formed with material such as transparent quartz, for example, which transmits the laser beam 5. As a result, the surface temperature of the wafer 2 can be made uniform all the more. Also, the wafer 2 is not contaminated by the wind.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18497987A JPS6428809A (en) | 1987-07-23 | 1987-07-23 | Laser annealing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18497987A JPS6428809A (en) | 1987-07-23 | 1987-07-23 | Laser annealing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6428809A true JPS6428809A (en) | 1989-01-31 |
Family
ID=16162678
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18497987A Pending JPS6428809A (en) | 1987-07-23 | 1987-07-23 | Laser annealing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6428809A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0360015A (en) * | 1989-07-27 | 1991-03-15 | Sanyo Electric Co Ltd | Laser annealing device |
| US6588232B1 (en) | 1998-01-13 | 2003-07-08 | Kabushiki Kaisha Toshiba | Treatment device, laser annealing device, manufacturing apparatus, and manufacturing apparatus for flat display device |
| JP2007288128A (en) * | 2006-03-23 | 2007-11-01 | Ihi Corp | Laser annealing device |
| WO2008152873A1 (en) * | 2007-06-12 | 2008-12-18 | The Japan Steel Works, Ltd. | Laser processing device |
| WO2025234129A1 (en) * | 2024-05-10 | 2025-11-13 | Ｊｓｗアクティナシステム株式会社 | Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device |
-
1987
- 1987-07-23 JP JP18497987A patent/JPS6428809A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0360015A (en) * | 1989-07-27 | 1991-03-15 | Sanyo Electric Co Ltd | Laser annealing device |
| US6588232B1 (en) | 1998-01-13 | 2003-07-08 | Kabushiki Kaisha Toshiba | Treatment device, laser annealing device, manufacturing apparatus, and manufacturing apparatus for flat display device |
| JP2007288128A (en) * | 2006-03-23 | 2007-11-01 | Ihi Corp | Laser annealing device |
| WO2008152873A1 (en) * | 2007-06-12 | 2008-12-18 | The Japan Steel Works, Ltd. | Laser processing device |
| JP2008311249A (en) * | 2007-06-12 | 2008-12-25 | Japan Steel Works Ltd:The | Laser processing equipment |
| WO2025234129A1 (en) * | 2024-05-10 | 2025-11-13 | Ｊｓｗアクティナシステム株式会社 | Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device |
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