JPS6429016A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS6429016A
JPS6429016A JP62183390A JP18339087A JPS6429016A JP S6429016 A JPS6429016 A JP S6429016A JP 62183390 A JP62183390 A JP 62183390A JP 18339087 A JP18339087 A JP 18339087A JP S6429016 A JPS6429016 A JP S6429016A
Authority
JP
Japan
Prior art keywords
fet
conductance
source voltage
comes
change
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62183390A
Other languages
Japanese (ja)
Inventor
Nobumi Matsuura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Hitachi Solutions Technology Ltd
Original Assignee
Hitachi ULSI Engineering Corp
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi ULSI Engineering Corp, Hitachi Ltd filed Critical Hitachi ULSI Engineering Corp
Priority to JP62183390A priority Critical patent/JPS6429016A/en
Publication of JPS6429016A publication Critical patent/JPS6429016A/en
Pending legal-status Critical Current

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  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
  • Dram (AREA)

Abstract

PURPOSE:To improve an operation margin against an input signal level by canceling the change of the conductance of an FET, provided between an output node and a power source voltage, by the FET the gate of which the power source voltage is inputted to. CONSTITUTION:When the power source voltage Vcc comes higher, the gate source voltage of the FET Q1 of an input circuit IC1 comes larger, and the conductance of it comes larger as well, and the logical threshold level of the input circuit IC1 is apt to ascend. But, in company with the ascent of the voltage Vcc, the gate source voltage of the FET Q9, the gate of which is connected of the voltage Vcc, comes larger, and the conductance of it comes larger. Here, because the rate of the change of the conductance of the FET Q9, due to the fluctuation of the voltage Vcc, is designed so as to be the same as the rate of the change of the conductance of the FET Q1, the influence of the FET Q1, due to the change of the conductance is canceled, and the logical threshold level of the input circuit IC1 comes less dependent on the power source voltage.
JP62183390A 1987-07-24 1987-07-24 Semiconductor integrated circuit device Pending JPS6429016A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62183390A JPS6429016A (en) 1987-07-24 1987-07-24 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62183390A JPS6429016A (en) 1987-07-24 1987-07-24 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS6429016A true JPS6429016A (en) 1989-01-31

Family

ID=16134936

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62183390A Pending JPS6429016A (en) 1987-07-24 1987-07-24 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS6429016A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03132211A (en) * 1989-09-12 1991-06-05 Samsung Semiconductor Inc Ttl/cmos level converter

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03132211A (en) * 1989-09-12 1991-06-05 Samsung Semiconductor Inc Ttl/cmos level converter

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