JPS6430272A - Thin film transistor - Google Patents

Abstract

PURPOSE:To simplify a manufacturing process by a method wherein a gate electrode or source and drain electrodes provided on the side of a picture element electrode directly above a substrate is (are) composed of a double-layer structure (double-layer structures) of a transparent conductor layer and a metal layer (transparent conductor layers and metal layers). CONSTITUTION:A transparent conductor layer 12 is formed over the whole surface of a transparent substrate 1 and a metal layer 13 is formed on it. Then the transparent conductor layer 12 and the metal layer 13 are etched and patterned into the forms of a picture element electrode 3 and a gate electrode 2. Then a silicon nitride layer to be a gate insulating film 4 and an amorphous silicon hydride layer to be a semiconductor layer 5 are successively formed over the whole surface and further a phosphorus-doped amorphous silicon hydride layer to be an n<+>type layer 6 is formed and those layers are etched to be patterned and, at the same time, to form a contact hole 9. Then an aluminum layer to be a source electrode 7 and a drain electrode 8 is formed and then the metal film 13, the silicon nitride film, the amorphous silicon hydride film and the like are removed by etching and a passivation film 10 and a light shield 11 are formed.