JPS6431466A - Forming method for silicon thin film for thin film transistor - Google Patents

Forming method for silicon thin film for thin film transistor

Info

Publication number
JPS6431466A
JPS6431466A JP62187345A JP18734587A JPS6431466A JP S6431466 A JPS6431466 A JP S6431466A JP 62187345 A JP62187345 A JP 62187345A JP 18734587 A JP18734587 A JP 18734587A JP S6431466 A JPS6431466 A JP S6431466A
Authority
JP
Japan
Prior art keywords
thin film
silicon
silicon thin
target
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62187345A
Other languages
Japanese (ja)
Inventor
Tadashi Serikawa
Seiichi Shirai
Akio Okamoto
Shiro Suyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP62187345A priority Critical patent/JPS6431466A/en
Publication of JPS6431466A publication Critical patent/JPS6431466A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]

Landscapes

  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To obtain a silicon thin film transistor having a high carrier mobility and capable of controlling a threshold voltage to a low value by discharging in inert gas added with hydrogen gas of specific molar % to generate ions, colliding them to the surface of a target to deposit discharged silicon atoms on a substrate, and annealing it for a specific length of time. CONSTITUTION:One or more of inert gases, such as helium, neon, argon, xenon, krypton and the like are mixed, and 1-50mol% of hydrogen gas is further mixed as sputtering gas. When a negative DC voltage or high frequency voltage is applied to an electrode 22, a glow discharge is generated to generate ions from the inert atmospheric gas to collide with the surface of a target 23 made of silicon. As a result, the silicon atoms are expelled out from the target 23 to form a silicon thin film on an insulating substrate 26. Then, the silicon thin film is annealed for a short time, such as 10 sec or less of heating time by a light radiating method of a laser to form a polycrystalline state.
JP62187345A 1987-07-27 1987-07-27 Forming method for silicon thin film for thin film transistor Pending JPS6431466A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62187345A JPS6431466A (en) 1987-07-27 1987-07-27 Forming method for silicon thin film for thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62187345A JPS6431466A (en) 1987-07-27 1987-07-27 Forming method for silicon thin film for thin film transistor

Publications (1)

Publication Number Publication Date
JPS6431466A true JPS6431466A (en) 1989-02-01

Family

ID=16204373

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62187345A Pending JPS6431466A (en) 1987-07-27 1987-07-27 Forming method for silicon thin film for thin film transistor

Country Status (1)

Country Link
JP (1) JPS6431466A (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04133313A (en) * 1990-09-25 1992-05-07 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor
JPH04151819A (en) * 1990-10-15 1992-05-25 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor
JPH04151820A (en) * 1990-10-15 1992-05-25 Semiconductor Energy Lab Co Ltd Semiconductor device
JPH04152640A (en) * 1990-10-17 1992-05-26 Semiconductor Energy Lab Co Ltd Manufacture of insulated-gate type semiconductor device
JPH04221816A (en) * 1990-12-21 1992-08-12 Semiconductor Energy Lab Co Ltd Method for forming semiconductor film
JPH04225219A (en) * 1990-12-26 1992-08-14 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor film
EP0485233A3 (en) * 1990-11-09 1994-09-21 Semiconductor Energy Lab A method of manufacturing insulated-gate field effect transistors
JP2002217124A (en) * 2001-01-15 2002-08-02 Toshiba Corp Laser annealing apparatus and laser annealing method
US6448577B1 (en) 1990-10-15 2002-09-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with grain boundaries
US6486495B2 (en) 1990-07-24 2002-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US6693301B2 (en) 1991-10-16 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving and manufacturing the same
US6713783B1 (en) 1991-03-15 2004-03-30 Semiconductor Energy Laboratory Co., Ltd. Compensating electro-optical device including thin film transistors
US6979840B1 (en) 1991-09-25 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having anodized metal film between the gate wiring and drain wiring
US7071910B1 (en) 1991-10-16 2006-07-04 Semiconductor Energy Laboratory Co., Ltd. Electrooptical device and method of driving and manufacturing the same
US7116302B2 (en) 1991-10-16 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Process of operating active matrix display device having thin film transistors
US7126161B2 (en) 1998-10-13 2006-10-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having El layer and sealing material

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7026200B2 (en) 1990-07-24 2006-04-11 Semiconductor Energy Laboratory Co. Ltd. Method for manufacturing a semiconductor device
US6486495B2 (en) 1990-07-24 2002-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US6261877B1 (en) 1990-09-11 2001-07-17 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing gate insulated field effect transistors
JPH04133313A (en) * 1990-09-25 1992-05-07 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor
US6448577B1 (en) 1990-10-15 2002-09-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with grain boundaries
JPH04151819A (en) * 1990-10-15 1992-05-25 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor
JPH04151820A (en) * 1990-10-15 1992-05-25 Semiconductor Energy Lab Co Ltd Semiconductor device
JPH04152640A (en) * 1990-10-17 1992-05-26 Semiconductor Energy Lab Co Ltd Manufacture of insulated-gate type semiconductor device
EP0481777B1 (en) * 1990-10-17 2006-05-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing gate insulated field effect transistors
EP0485233A3 (en) * 1990-11-09 1994-09-21 Semiconductor Energy Lab A method of manufacturing insulated-gate field effect transistors
US7507615B2 (en) 1990-11-09 2009-03-24 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing gate insulated field effect transistors
US6177302B1 (en) 1990-11-09 2001-01-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor using multiple sputtering chambers
US6566175B2 (en) 1990-11-09 2003-05-20 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing gate insulated field effect transistors
JPH04221816A (en) * 1990-12-21 1992-08-12 Semiconductor Energy Lab Co Ltd Method for forming semiconductor film
JPH04225219A (en) * 1990-12-26 1992-08-14 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor film
US6713783B1 (en) 1991-03-15 2004-03-30 Semiconductor Energy Laboratory Co., Ltd. Compensating electro-optical device including thin film transistors
US6979840B1 (en) 1991-09-25 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having anodized metal film between the gate wiring and drain wiring
US7642584B2 (en) 1991-09-25 2010-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6759680B1 (en) 1991-10-16 2004-07-06 Semiconductor Energy Laboratory Co., Ltd. Display device having thin film transistors
US6693301B2 (en) 1991-10-16 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving and manufacturing the same
US7071910B1 (en) 1991-10-16 2006-07-04 Semiconductor Energy Laboratory Co., Ltd. Electrooptical device and method of driving and manufacturing the same
US7116302B2 (en) 1991-10-16 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Process of operating active matrix display device having thin film transistors
US7126161B2 (en) 1998-10-13 2006-10-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having El layer and sealing material
US7449725B2 (en) 1998-10-13 2008-11-11 Semiconductor Energy Laboratory Co., Ltd. Active matrix EL device with sealing structure housing the device
US8148743B2 (en) 1998-10-13 2012-04-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including semiconductor circuit made from semiconductor element and manufacturing method thereof
US8421114B2 (en) 1998-10-13 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Active matrix electroluminescent device within resin sealed housing
US8969906B2 (en) 1998-10-13 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Active matrix electroluminescent device within resin sealed housing
JP2002217124A (en) * 2001-01-15 2002-08-02 Toshiba Corp Laser annealing apparatus and laser annealing method

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