JPS6431472A - Ultraviolet photoelectric detector and its manufacture - Google Patents

Ultraviolet photoelectric detector and its manufacture

Info

Publication number
JPS6431472A
JPS6431472A JP63151361A JP15136188A JPS6431472A JP S6431472 A JPS6431472 A JP S6431472A JP 63151361 A JP63151361 A JP 63151361A JP 15136188 A JP15136188 A JP 15136188A JP S6431472 A JPS6431472 A JP S6431472A
Authority
JP
Japan
Prior art keywords
potential barrier
ray
detection region
photoelectric detector
wavelength component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63151361A
Other languages
English (en)
Other versions
JPH0770753B2 (ja
Inventor
Popobitsuku Radeihoe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Building Technologies AG
Landis and Gyr AG
Original Assignee
Landis and Gyr AG
LGZ Landis and Gyr Zug AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Landis and Gyr AG, LGZ Landis and Gyr Zug AG filed Critical Landis and Gyr AG
Publication of JPS6431472A publication Critical patent/JPS6431472A/ja
Publication of JPH0770753B2 publication Critical patent/JPH0770753B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/2823—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices being conductor-insulator-semiconductor devices, e.g. diodes or charge-coupled devices [CCD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier

Landscapes

  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP63151361A 1987-06-22 1988-06-21 柴外線の光電検出器及びその製造方法 Expired - Fee Related JPH0770753B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
CH235887 1987-06-22
CH1387/88-6 1988-04-14
CH138788 1988-04-14
CH2358/87-8 1988-04-14

Publications (2)

Publication Number Publication Date
JPS6431472A true JPS6431472A (en) 1989-02-01
JPH0770753B2 JPH0770753B2 (ja) 1995-07-31

Family

ID=25687516

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63151361A Expired - Fee Related JPH0770753B2 (ja) 1987-06-22 1988-06-21 柴外線の光電検出器及びその製造方法

Country Status (5)

Country Link
US (1) US4910570A (ja)
EP (1) EP0296371B1 (ja)
JP (1) JPH0770753B2 (ja)
DE (1) DE3876869D1 (ja)
DK (1) DK173856B1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005536035A (ja) * 2002-05-24 2005-11-24 フラウンホーファー−ゲゼルシャフト・ツール・フェルデルング・デル・アンゲヴァンテン・フォルシュング・アインゲトラーゲネル・フェライン フォトダイオード
JP2008530808A (ja) * 2005-02-18 2008-08-07 オーストリアマイクロシステムズ アクチエンゲゼルシャフト 青色感度の高い光感応性素子、光感応性素子の製造方法、および、光感応性素子の駆動方法
JP2008282318A (ja) * 2007-05-14 2008-11-20 Fuji Electric Retail Systems Co Ltd 自動販売機
JP2019067893A (ja) * 2017-09-29 2019-04-25 エイブリック株式会社 半導体光検出装置および特定波長の光検出方法

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH684971A5 (de) * 1989-03-16 1995-02-15 Landis & Gyr Tech Innovat Ultraviolettlicht-Sensor.
CH680390A5 (ja) * 1990-05-18 1992-08-14 Landis & Gyr Betriebs Ag
EP0579045B1 (de) * 1992-07-16 1995-02-22 Landis & Gyr Technology Innovation AG Anordnung mit einer integrierten farbselektiven Photodiode und einem der Photodiode nachgeschalteten Verstärker
DE69321822T2 (de) * 1993-05-19 1999-04-01 Hewlett-Packard Gmbh, 71034 Boeblingen Photodiodenstruktur
DE4407730A1 (de) * 1994-03-08 1995-09-14 Fraunhofer Ges Forschung Halbleiterdetektor für kurzwellige Strahlung und Verfahren zu dessen Herstellung
JP2596380B2 (ja) * 1994-07-05 1997-04-02 日本電気株式会社 ショットキ型赤外線センサ
US5814873A (en) * 1994-07-05 1998-09-29 Nec Corporation Schottky barrier infrared sensor
WO1997018447A1 (en) * 1995-11-14 1997-05-22 Tom Konstantin Abramovich Method of measuring ultraviolet light, device for applying said method and a photo-converter
WO1997029517A2 (de) * 1996-02-05 1997-08-14 Laboratorium Für Physikalische Elektronik Uv-strahlungsdetektor
US5945722A (en) * 1997-05-02 1999-08-31 National Semiconductor Corporation Color active pixel sensor cell with oxide color filter
EP0986110A1 (de) * 1998-09-10 2000-03-15 Electrowatt Technology Innovation AG Lichtempfindliches Halbleiterelement und Verwendung zur Regelung von Flammen
RU2155418C1 (ru) * 1999-03-31 2000-08-27 Санкт-Петербургский государственный электротехнический университет Полупроводниковый датчик ультрафиолетового излучения
US6414342B1 (en) * 1999-06-18 2002-07-02 Micron Technology Inc. Photogate with improved short wavelength response for a CMOS imager
US6204524B1 (en) 1999-07-14 2001-03-20 Micron Technology, Inc. CMOS imager with storage capacitor
DE19936000A1 (de) 1999-07-30 2001-02-08 Osram Opto Semiconductors Gmbh UV-Photodetektor mit verbesserter Empfindlichkeit
EP1191598B1 (de) * 2000-01-18 2007-12-19 Siemens Schweiz AG Verfahren zur Herstellung eines Halbleiter-Photosensors
JP2001284629A (ja) * 2000-03-29 2001-10-12 Sharp Corp 回路内蔵受光素子
JP4465941B2 (ja) * 2001-11-22 2010-05-26 富士ゼロックス株式会社 紫外線受光素子
US7719091B2 (en) * 2002-06-28 2010-05-18 M/A-Com Technology Solutions Holdings, Inc. Diode with improved switching speed
KR100572853B1 (ko) * 2003-12-26 2006-04-24 한국전자통신연구원 반도체 광센서
JP5062422B2 (ja) 2005-11-24 2012-10-31 株式会社村田製作所 紫外線センサ
US8275724B2 (en) * 2008-10-15 2012-09-25 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of improving system performance and survivability through changing function
US10132679B2 (en) 2014-05-23 2018-11-20 Maxim Integrated Products, Inc. Ultraviolet sensor having filter

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51285A (ja) * 1974-06-19 1976-01-05 Matsushita Electric Industrial Co Ltd
JPS51144194A (en) * 1975-06-06 1976-12-10 Hitachi Ltd A semiconductor photo detector
JPS54133085A (en) * 1978-01-10 1979-10-16 Mader Hermann Semiconductor diode

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US3418473A (en) * 1965-08-12 1968-12-24 Honeywell Inc Solid state junction device for ultraviolet detection
US3560812A (en) * 1968-07-05 1971-02-02 Gen Electric High selectively electromagnetic radiation detecting devices
US3852591A (en) * 1973-10-19 1974-12-03 Bell Telephone Labor Inc Graded bandgap semiconductor photodetector for equalization of optical fiber material delay distortion
US4032951A (en) * 1976-04-13 1977-06-28 Bell Telephone Laboratories, Incorporated Growth of iii-v layers containing arsenic, antimony and phosphorus, and device uses
FR2363197A1 (fr) * 1976-08-23 1978-03-24 Ibm Structure de photo-diode amelioree donnant une reponse en couleur bleue renforcee
US4141756A (en) * 1977-10-14 1979-02-27 Honeywell Inc. Method of making a gap UV photodiode by multiple ion-implantations
US4319258A (en) * 1980-03-07 1982-03-09 General Dynamics, Pomona Division Schottky barrier photovoltaic detector
JPS5737888A (en) * 1980-08-19 1982-03-02 Mitsubishi Electric Corp Photo detector
US4544939A (en) * 1981-08-25 1985-10-01 Rca Corporation Schottky-barrier diode radiant energy detector with extended longer wavelength response
DE3234096A1 (de) * 1982-09-14 1984-03-15 Messerschmitt-Bölkow-Blohm GmbH, 8000 München Bauelemente und arrays aus silizium zur detektion von infrarotem licht
JPS59108461A (ja) * 1982-12-14 1984-06-22 Olympus Optical Co Ltd 固体撮像装置
US4594605A (en) * 1983-04-28 1986-06-10 Rca Corporation Imaging device having enhanced quantum efficiency
JPS6057780A (ja) * 1983-09-07 1985-04-03 Toshiba Corp 固体撮像装置およびその製造方法
FR2559619B1 (fr) * 1984-02-10 1987-01-16 Thomson Csf Dispositif photosensible avec filtres integres pour la separation des couleurs et procede de fabrication
US4598305A (en) * 1984-06-18 1986-07-01 Xerox Corporation Depletion mode thin film semiconductor photodetectors
DE3441922C2 (de) * 1984-11-16 1986-10-02 Messerschmitt-Bölkow-Blohm GmbH, 8012 Ottobrunn Fotokathode für den Infrarotbereich
US4710589A (en) * 1986-10-21 1987-12-01 Ametek, Inc. Heterojunction p-i-n photovoltaic cell

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51285A (ja) * 1974-06-19 1976-01-05 Matsushita Electric Industrial Co Ltd
JPS51144194A (en) * 1975-06-06 1976-12-10 Hitachi Ltd A semiconductor photo detector
JPS54133085A (en) * 1978-01-10 1979-10-16 Mader Hermann Semiconductor diode

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005536035A (ja) * 2002-05-24 2005-11-24 フラウンホーファー−ゲゼルシャフト・ツール・フェルデルング・デル・アンゲヴァンテン・フォルシュング・アインゲトラーゲネル・フェライン フォトダイオード
JP2008530808A (ja) * 2005-02-18 2008-08-07 オーストリアマイクロシステムズ アクチエンゲゼルシャフト 青色感度の高い光感応性素子、光感応性素子の製造方法、および、光感応性素子の駆動方法
JP4829255B2 (ja) * 2005-02-18 2011-12-07 オーストリアマイクロシステムズ アクチエンゲゼルシャフト 青色感度の高い光感応性素子、光感応性素子の製造方法、および、光感応性素子の駆動方法
US8227882B2 (en) 2005-02-18 2012-07-24 Austriamicrosystems Ag Light-sensitive component with increased blue sensitivity, method for the production thereof, and operating method
JP2008282318A (ja) * 2007-05-14 2008-11-20 Fuji Electric Retail Systems Co Ltd 自動販売機
JP2019067893A (ja) * 2017-09-29 2019-04-25 エイブリック株式会社 半導体光検出装置および特定波長の光検出方法

Also Published As

Publication number Publication date
US4910570A (en) 1990-03-20
DE3876869D1 (de) 1993-02-04
DK339988A (da) 1988-12-23
JPH0770753B2 (ja) 1995-07-31
DK339988D0 (da) 1988-06-21
EP0296371A1 (de) 1988-12-28
EP0296371B1 (de) 1992-12-23
DK173856B1 (da) 2001-12-27

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