JPS6431976A - Plasma cvd device - Google Patents
Plasma cvd deviceInfo
- Publication number
- JPS6431976A JPS6431976A JP18613187A JP18613187A JPS6431976A JP S6431976 A JPS6431976 A JP S6431976A JP 18613187 A JP18613187 A JP 18613187A JP 18613187 A JP18613187 A JP 18613187A JP S6431976 A JPS6431976 A JP S6431976A
- Authority
- JP
- Japan
- Prior art keywords
- raw gas
- nozzle
- pipeline
- vessel
- glow discharge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE:To promote the excitation of a raw gas, to enable low-temp. treatment, and to reduce the running cost of the title device by providing a hollow cathode to a nozzle for blowing the raw gas introduced through a pipeline into a vessel. CONSTITUTION:A voltage is impressed on a substrate electrode 11 arranged in the vessel 10 from a DC power source 13 to generate glow discharge. Meanwhile, the raw gas to be introduced into the vessel 10 through the pipeline 12 is blown off from the nozzle 15 of the chamber 14 provided at the tip of the pipeline 12 toward the substrate electrode 11. The raw gas is excited at the glow discharge region P, and the reaction product is grown in a vapor phase on the substrate electrode 11. In the plasma CVD device, the hollow cathode 16 is provided to the nozzle 15, and a voltage lower than the glow discharge voltage is impressed by a DC power source 17. The current density in the nozzle 15 is increased by the effect of the hollow cathode 16, hence the excitation of the raw gas is promoted, aid low-temp. treatment can be carried out.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18613187A JPS6431976A (en) | 1987-07-25 | 1987-07-25 | Plasma cvd device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18613187A JPS6431976A (en) | 1987-07-25 | 1987-07-25 | Plasma cvd device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6431976A true JPS6431976A (en) | 1989-02-02 |
Family
ID=16182911
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18613187A Pending JPS6431976A (en) | 1987-07-25 | 1987-07-25 | Plasma cvd device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6431976A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01309969A (en) * | 1988-06-07 | 1989-12-14 | Fujitsu Ltd | Thin film-forming equipment |
-
1987
- 1987-07-25 JP JP18613187A patent/JPS6431976A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01309969A (en) * | 1988-06-07 | 1989-12-14 | Fujitsu Ltd | Thin film-forming equipment |
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