JPS6432155A - Device for evaluating crystallinity - Google Patents

Device for evaluating crystallinity

Info

Publication number
JPS6432155A
JPS6432155A JP18937887A JP18937887A JPS6432155A JP S6432155 A JPS6432155 A JP S6432155A JP 18937887 A JP18937887 A JP 18937887A JP 18937887 A JP18937887 A JP 18937887A JP S6432155 A JPS6432155 A JP S6432155A
Authority
JP
Japan
Prior art keywords
specimen
light
scattered light
raman scattered
stoke
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18937887A
Other languages
Japanese (ja)
Inventor
Yasuaki Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP18937887A priority Critical patent/JPS6432155A/en
Publication of JPS6432155A publication Critical patent/JPS6432155A/en
Pending legal-status Critical Current

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  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)

Abstract

PURPOSE:To exactly evaluate the crystallinity of a specimen by determining the intensity ratio of the Stoke's light anti-Stoke's light of the Raman scattered light of the specimen, calculating the temps. of the specimen therefrom and correcting the peak wave numbers of the Raman scattered light. CONSTITUTION:Excitation light 2 is emitted from a light source 1, is condensed by a lens 4 and is projected on the specimen 5. The scattered light 6 from the specimen 5 is spectrally split by a spectroscope 8, is detected by a detector 9 and the data thereof are inputted to a computer 10, by which the distribution of the light intensities is determined. The intensity ratio of the Stoke's light and anti-Stoke's light of the Raman scattered light of the specimen 5 is determined in the computer 10 at this time and the temps. at the respective measurement points of the specimen 5 are calculated from this ratio. The influence of the temp. is corrected from the peak wave numbers of the Raman scattered light at the respective measurement points by using the calculated temps. The peak wave numbers of the Raman scattered light are thus corrected and the peak wave numbers reflecting only the stresses existing in the specimen are determined and, therefore, the crystallinity of the specimen is exactly evaluated.
JP18937887A 1987-07-28 1987-07-28 Device for evaluating crystallinity Pending JPS6432155A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18937887A JPS6432155A (en) 1987-07-28 1987-07-28 Device for evaluating crystallinity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18937887A JPS6432155A (en) 1987-07-28 1987-07-28 Device for evaluating crystallinity

Publications (1)

Publication Number Publication Date
JPS6432155A true JPS6432155A (en) 1989-02-02

Family

ID=16240315

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18937887A Pending JPS6432155A (en) 1987-07-28 1987-07-28 Device for evaluating crystallinity

Country Status (1)

Country Link
JP (1) JPS6432155A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5032530A (en) * 1989-10-27 1991-07-16 Micron Technology, Inc. Split-polysilicon CMOS process incorporating unmasked punchthrough and source/drain implants

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5032530A (en) * 1989-10-27 1991-07-16 Micron Technology, Inc. Split-polysilicon CMOS process incorporating unmasked punchthrough and source/drain implants

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