JPS6432684A - Photoelectric converter - Google Patents

Photoelectric converter

Info

Publication number
JPS6432684A
JPS6432684A JP62187706A JP18770687A JPS6432684A JP S6432684 A JPS6432684 A JP S6432684A JP 62187706 A JP62187706 A JP 62187706A JP 18770687 A JP18770687 A JP 18770687A JP S6432684 A JPS6432684 A JP S6432684A
Authority
JP
Japan
Prior art keywords
film
thin
substantially intrinsic
amorphous silicon
silane compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62187706A
Other languages
Japanese (ja)
Other versions
JP2575397B2 (en
Inventor
Yoshinori Ashida
Nobuhiro Fukuda
Masato Koyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Toatsu Chemicals Inc
Original Assignee
Mitsui Toatsu Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Toatsu Chemicals Inc filed Critical Mitsui Toatsu Chemicals Inc
Priority to JP62187706A priority Critical patent/JP2575397B2/en
Publication of JPS6432684A publication Critical patent/JPS6432684A/en
Application granted granted Critical
Publication of JP2575397B2 publication Critical patent/JP2575397B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To improve the characteristic values of the open ended voltage of a photoelectric converter, short-circuit photocurrents, etc., by forming and interposing a first substantially intrinsic thin-film between a first conductive thin-film and a second substantially intrinsic thin-film by the plasma decomposition of a silane compound. CONSTITUTION:A first conductive thin-film consisting of a P-type amorphous silicon group thin-film, a first thinner substantially intrinsic thin-film composed of amorphous silicon shaped by the plasma decomposition of a silane compound shown in general formula SinH2n+2 on said thin-film, a second thicker conductive thin-film made up of N-type amorphous silicon by the plasma decomposition of the mixed gas of the silane compound and phosphine PH3 on said first substantially intrinsic thin-film, and a second electrode are formed onto a first electrode in succession, thus manufacturing a photoelectric converter.
JP62187706A 1987-07-29 1987-07-29 Method for manufacturing photoelectric conversion element Expired - Fee Related JP2575397B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62187706A JP2575397B2 (en) 1987-07-29 1987-07-29 Method for manufacturing photoelectric conversion element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62187706A JP2575397B2 (en) 1987-07-29 1987-07-29 Method for manufacturing photoelectric conversion element

Publications (2)

Publication Number Publication Date
JPS6432684A true JPS6432684A (en) 1989-02-02
JP2575397B2 JP2575397B2 (en) 1997-01-22

Family

ID=16210741

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62187706A Expired - Fee Related JP2575397B2 (en) 1987-07-29 1987-07-29 Method for manufacturing photoelectric conversion element

Country Status (1)

Country Link
JP (1) JP2575397B2 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58145171A (en) * 1981-12-14 1983-08-29 エナジー・コンバーション・デバイセス・インコーポレーテッド Increased current photovoltaic devices
JPS6150380A (en) * 1984-08-20 1986-03-12 Mitsui Toatsu Chem Inc Manufacture of photoelectric conversion element
JPS61160979A (en) * 1985-01-08 1986-07-21 Sharp Corp Manufacture of amorphous solar cell

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58145171A (en) * 1981-12-14 1983-08-29 エナジー・コンバーション・デバイセス・インコーポレーテッド Increased current photovoltaic devices
JPS6150380A (en) * 1984-08-20 1986-03-12 Mitsui Toatsu Chem Inc Manufacture of photoelectric conversion element
JPS61160979A (en) * 1985-01-08 1986-07-21 Sharp Corp Manufacture of amorphous solar cell

Also Published As

Publication number Publication date
JP2575397B2 (en) 1997-01-22

Similar Documents

Publication Publication Date Title
US4365107A (en) Amorphous film solar cell
CA2161932A1 (en) Photovoltaic Element and Method for Producing the Same
FR2432765B1 (en)
AU8001487A (en) Heterojunction p-i-n photovoltaic cell
JPS5513939A (en) Photoelectronic conversion semiconductor device
EP1107319A3 (en) Thin film solar cell and fabrication method therefor
US4926230A (en) Multiple junction solar power generation cells
JPS57136377A (en) Amorphous silicon nitride/amorphous silicon heterojunction photoelectric element
JPS6432684A (en) Photoelectric converter
JPS55121686A (en) Photovoltaic device
JPS5613779A (en) Photoelectric converter and its preparation
JPS5963774A (en) Thin-film silicon solar cell
JPS55115372A (en) Photovoltaic device
JPS571262A (en) Solar cell
JPS6471185A (en) Photoelectric conversion device
JP2632743B2 (en) Amorphous solar cell
JPS56107588A (en) Semiconductor light emitting element
JPS55162223A (en) Semiconductor device and its preparation
JPS57202546A (en) Electrostatic copier
JPS57187976A (en) Semiconductor photoelectric converter
JPS6459966A (en) Laminated multilayer amorphous solar cell
JPS62113482A (en) photovoltaic device
KR920009897B1 (en) Amorphous silicon solar cell
JPS57157579A (en) Solar battery device
JPH0738453B2 (en) Stacked semiconductor device

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees