JPS6433096A - Gaseous phase synthesis for diamond - Google Patents

Gaseous phase synthesis for diamond

Info

Publication number
JPS6433096A
JPS6433096A JP62220437A JP22043787A JPS6433096A JP S6433096 A JPS6433096 A JP S6433096A JP 62220437 A JP62220437 A JP 62220437A JP 22043787 A JP22043787 A JP 22043787A JP S6433096 A JPS6433096 A JP S6433096A
Authority
JP
Japan
Prior art keywords
substrate
film
diamond
plasma jet
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62220437A
Other languages
Japanese (ja)
Other versions
JPH0477710B2 (en
Inventor
Kazuaki Kurihara
Kenichi Sasaki
Motonobu Kawarada
Nagaaki Etsuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62220437A priority Critical patent/JPS6433096A/en
Priority to EP88302836A priority patent/EP0286306B1/en
Priority to DE88302836T priority patent/DE3884653T2/en
Priority to SU884355493A priority patent/RU2032765C1/en
Priority to KR1019880003737A priority patent/KR910006784B1/en
Priority to US07/177,504 priority patent/US5368897A/en
Publication of JPS6433096A publication Critical patent/JPS6433096A/en
Priority to US07/905,226 priority patent/US5403399A/en
Publication of JPH0477710B2 publication Critical patent/JPH0477710B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To synthesize a diamond of high film-formation rate, sufficient film- thickness and superior film-property by quenching through colliding a cold substrate with the thermo-plasma jet of a gas containing hydrogen and carbon compd. CONSTITUTION:By applying a DC current between an anode 1 and a cathode 2 under the flow of a gas containing a hydrogen 3 and a carbon compd. gas 4, and a discharging arc furnace 5, the said gas is rapidly heated to form a thermoplasma of >=10,000 deg.C at around a nozzle 6. Owing to the vol. expansion due to a rapid temp. increase, the said plasma spouts, as an supersonic plasma jet, from a nozzle 6 into a chamber 7 under reduced pressure. The plasma jet is collided efficiently on to the cooled substrate 10, and quenched to react on to the substrate prior to the disappearance of a short-life hydrogen atom and others, and a diamond film 11 is synthesized thereby. Owing to a powerful ultraviolet ray radiated by the arc discharge, the kinetic energy due to a photoactivation and a collision of supersonic particles is further participated in the reaction on to the substrate.
JP62220437A 1987-04-03 1987-09-04 Gaseous phase synthesis for diamond Granted JPS6433096A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP62220437A JPS6433096A (en) 1987-04-03 1987-09-04 Gaseous phase synthesis for diamond
EP88302836A EP0286306B1 (en) 1987-04-03 1988-03-30 Method and apparatus for vapor deposition of diamond
DE88302836T DE3884653T2 (en) 1987-04-03 1988-03-30 Method and device for the vapor deposition of diamond.
SU884355493A RU2032765C1 (en) 1987-04-03 1988-04-01 Method of diamond coating application from vapor phase and a device for it realization
KR1019880003737A KR910006784B1 (en) 1987-04-03 1988-04-02 Diamond deposition apparatus and method
US07/177,504 US5368897A (en) 1987-04-03 1988-04-04 Method for arc discharge plasma vapor deposition of diamond
US07/905,226 US5403399A (en) 1987-04-03 1992-06-29 Method and apparatus for vapor deposition of diamond

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP8331887 1987-04-03
JP62220437A JPS6433096A (en) 1987-04-03 1987-09-04 Gaseous phase synthesis for diamond

Publications (2)

Publication Number Publication Date
JPS6433096A true JPS6433096A (en) 1989-02-02
JPH0477710B2 JPH0477710B2 (en) 1992-12-09

Family

ID=26424365

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62220437A Granted JPS6433096A (en) 1987-04-03 1987-09-04 Gaseous phase synthesis for diamond

Country Status (1)

Country Link
JP (1) JPS6433096A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990005701A1 (en) * 1988-11-16 1990-05-31 Andrew Carey Good Diamond production
JPH0544041A (en) * 1990-12-12 1993-02-23 Semiconductor Energy Lab Co Ltd Film forming apparatus and film forming method
US5217700A (en) * 1990-12-15 1993-06-08 Fujitsu Limited Process and apparatus for producing diamond film
US5256205A (en) * 1990-05-09 1993-10-26 Jet Process Corporation Microwave plasma assisted supersonic gas jet deposition of thin film materials
US5314726A (en) * 1990-10-17 1994-05-24 Fujitsu Ltd. Process for forming a mixed layer of a plasma sprayed material and diamond
US5356673A (en) * 1991-03-18 1994-10-18 Jet Process Corporation Evaporation system and method for gas jet deposition of thin film materials
US5356672A (en) * 1990-05-09 1994-10-18 Jet Process Corporation Method for microwave plasma assisted supersonic gas jet deposition of thin films
US5538765A (en) * 1992-05-07 1996-07-23 Fujitsu Ltd. DC plasma jet CVD method for producing diamond
US5571332A (en) * 1995-02-10 1996-11-05 Jet Process Corporation Electron jet vapor deposition system
JP2011513167A (en) * 2008-02-28 2011-04-28 ビーエーエスエフ ソシエタス・ヨーロピア Graphite nanoplatelets and compositions
WO2012144580A1 (en) * 2011-04-20 2012-10-26 Ntn株式会社 Amorphous carbon film and method for forming same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3683338A4 (en) * 2017-08-15 2021-08-18 Sumitomo Electric Industries, Ltd. BODIES OBTAINED BY PROCESSING A SOLID CARBON MATERIAL, METHOD FOR MANUFACTURING IT, AND APPARATUS FOR MANUFACTURING THEREOF

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5930709A (en) * 1982-08-13 1984-02-18 Toa Nenryo Kogyo Kk Method for synthesizing carbon film and carbon granule in vapor phase
JPS60118693A (en) * 1983-11-25 1985-06-26 Mitsubishi Metal Corp Method for synthesizing diamond under low pressure
JPS60127299A (en) * 1983-12-14 1985-07-06 Sumitomo Electric Ind Ltd Diamond vapor phase synthesis method
JPS61183198A (en) * 1984-12-29 1986-08-15 Kyocera Corp Production of diamond film
JPS61222915A (en) * 1985-03-29 1986-10-03 Asahi Chem Ind Co Ltd Vapor-phase synthesis of diamond
JPS62158195A (en) * 1985-12-27 1987-07-14 Natl Inst For Res In Inorg Mater Diamond synthesis method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5930709A (en) * 1982-08-13 1984-02-18 Toa Nenryo Kogyo Kk Method for synthesizing carbon film and carbon granule in vapor phase
JPS60118693A (en) * 1983-11-25 1985-06-26 Mitsubishi Metal Corp Method for synthesizing diamond under low pressure
JPS60127299A (en) * 1983-12-14 1985-07-06 Sumitomo Electric Ind Ltd Diamond vapor phase synthesis method
JPS61183198A (en) * 1984-12-29 1986-08-15 Kyocera Corp Production of diamond film
JPS61222915A (en) * 1985-03-29 1986-10-03 Asahi Chem Ind Co Ltd Vapor-phase synthesis of diamond
JPS62158195A (en) * 1985-12-27 1987-07-14 Natl Inst For Res In Inorg Mater Diamond synthesis method

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990005701A1 (en) * 1988-11-16 1990-05-31 Andrew Carey Good Diamond production
US5356672A (en) * 1990-05-09 1994-10-18 Jet Process Corporation Method for microwave plasma assisted supersonic gas jet deposition of thin films
US5256205A (en) * 1990-05-09 1993-10-26 Jet Process Corporation Microwave plasma assisted supersonic gas jet deposition of thin film materials
US5314726A (en) * 1990-10-17 1994-05-24 Fujitsu Ltd. Process for forming a mixed layer of a plasma sprayed material and diamond
JPH0544041A (en) * 1990-12-12 1993-02-23 Semiconductor Energy Lab Co Ltd Film forming apparatus and film forming method
US5217700A (en) * 1990-12-15 1993-06-08 Fujitsu Limited Process and apparatus for producing diamond film
EP0491521B1 (en) * 1990-12-15 1997-03-12 Fujitsu Limited Process for producing diamond film
US5356673A (en) * 1991-03-18 1994-10-18 Jet Process Corporation Evaporation system and method for gas jet deposition of thin film materials
US5565249A (en) * 1992-05-07 1996-10-15 Fujitsu Limited Method for producing diamond by a DC plasma jet
US5538765A (en) * 1992-05-07 1996-07-23 Fujitsu Ltd. DC plasma jet CVD method for producing diamond
US5571332A (en) * 1995-02-10 1996-11-05 Jet Process Corporation Electron jet vapor deposition system
JP2011513167A (en) * 2008-02-28 2011-04-28 ビーエーエスエフ ソシエタス・ヨーロピア Graphite nanoplatelets and compositions
WO2012144580A1 (en) * 2011-04-20 2012-10-26 Ntn株式会社 Amorphous carbon film and method for forming same
JP2012233257A (en) * 2011-04-20 2012-11-29 Ntn Corp Amorphous carbon film and method for forming the same
US9217195B2 (en) 2011-04-20 2015-12-22 Ntn Corporation Amorphous carbon film and method for forming same

Also Published As

Publication number Publication date
JPH0477710B2 (en) 1992-12-09

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