JPS6433794A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPS6433794A
JPS6433794A JP18943387A JP18943387A JPS6433794A JP S6433794 A JPS6433794 A JP S6433794A JP 18943387 A JP18943387 A JP 18943387A JP 18943387 A JP18943387 A JP 18943387A JP S6433794 A JPS6433794 A JP S6433794A
Authority
JP
Japan
Prior art keywords
resistance
writing
trt
memory cell
information
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18943387A
Other languages
Japanese (ja)
Other versions
JPH0766676B2 (en
Inventor
Mizuho Imai
Eishin Minagawa
Yuichi Tatsumi
Hiroshi Iwahashi
Masamichi Asano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Priority to JP18943387A priority Critical patent/JPH0766676B2/en
Priority to US07/224,953 priority patent/US5010520A/en
Priority to DE8888112161T priority patent/DE3874455T2/en
Priority to DE91102850T priority patent/DE3884820T2/en
Priority to EP91102850A priority patent/EP0441409B1/en
Priority to EP88112161A priority patent/EP0301521B1/en
Priority to KR1019880009578A priority patent/KR910007404B1/en
Publication of JPS6433794A publication Critical patent/JPS6433794A/en
Priority to US07/607,468 priority patent/US5175704A/en
Publication of JPH0766676B2 publication Critical patent/JPH0766676B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

PURPOSE:To make current consumption constant and to align a writing quantity into a memory cell by changing the resistance value of a circuit for writing in accordance with the size of the source resistance of a memory cell, and aligning memory drain currents at the time of the writing of information. CONSTITUTION:By a column selecting transistor TRT 1 and the two pieces of the writing information of memory cells '0' and '1', a resistance R1 is inserted between a TRT 2 to supply a VPP potential for the writing and the TRT 1. Consequently, a circuit to write the information into a memory cell TC 1 consists of the TRT 1, the T2 and a resistance component R1. The resistance value of this resistance is reduced as the source resistance attached to the memory cell increases. That is, the resistance values are set to R1>R2; R4>R3; R2=R3. Here, the expression R2=R3 is formed because the sources of respective memory cells corresponding to this are mutually at the same distances.
JP18943387A 1987-07-29 1987-07-29 Semiconductor memory device Expired - Fee Related JPH0766676B2 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP18943387A JPH0766676B2 (en) 1987-07-29 1987-07-29 Semiconductor memory device
EP88112161A EP0301521B1 (en) 1987-07-29 1988-07-27 Nonvolatile semiconductor memory device
DE8888112161T DE3874455T2 (en) 1987-07-29 1988-07-27 NON-VOLATILE SEMICONDUCTOR MEMORY.
DE91102850T DE3884820T2 (en) 1987-07-29 1988-07-27 Non-volatile semiconductor memory device.
EP91102850A EP0441409B1 (en) 1987-07-29 1988-07-27 Nonvolatile semiconductor memory device
US07/224,953 US5010520A (en) 1987-07-29 1988-07-27 Nonvolatile semiconductor memory device with stabilized data write characteristic
KR1019880009578A KR910007404B1 (en) 1987-07-29 1988-07-29 Nonvolatile Semiconductor Memory
US07/607,468 US5175704A (en) 1987-07-29 1990-10-31 Nonvolatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18943387A JPH0766676B2 (en) 1987-07-29 1987-07-29 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS6433794A true JPS6433794A (en) 1989-02-03
JPH0766676B2 JPH0766676B2 (en) 1995-07-19

Family

ID=16241166

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18943387A Expired - Fee Related JPH0766676B2 (en) 1987-07-29 1987-07-29 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPH0766676B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5468023B2 (en) * 2009-02-06 2014-04-09 パナソニック株式会社 Nonvolatile semiconductor memory

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6054300U (en) * 1983-09-20 1985-04-16 三洋電機株式会社 Non-volatile memory read circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6054300U (en) * 1983-09-20 1985-04-16 三洋電機株式会社 Non-volatile memory read circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5468023B2 (en) * 2009-02-06 2014-04-09 パナソニック株式会社 Nonvolatile semiconductor memory

Also Published As

Publication number Publication date
JPH0766676B2 (en) 1995-07-19

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees