JPS6435525A - Quantum well type optical modulator - Google Patents

Quantum well type optical modulator

Info

Publication number
JPS6435525A
JPS6435525A JP19042187A JP19042187A JPS6435525A JP S6435525 A JPS6435525 A JP S6435525A JP 19042187 A JP19042187 A JP 19042187A JP 19042187 A JP19042187 A JP 19042187A JP S6435525 A JPS6435525 A JP S6435525A
Authority
JP
Japan
Prior art keywords
quantum well
clad layer
conduction type
layer
optical modulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19042187A
Other languages
Japanese (ja)
Other versions
JP2670051B2 (en
Inventor
Nobuhiro Kawaguchi
Koichi Wakita
Shunji Nojima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP62190421A priority Critical patent/JP2670051B2/en
Publication of JPS6435525A publication Critical patent/JPS6435525A/en
Application granted granted Critical
Publication of JP2670051B2 publication Critical patent/JP2670051B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Optical Integrated Circuits (AREA)

Abstract

PURPOSE:To enable large modulation or switching with a small driving voltage by providing a 1st clad layer, active layers having specific multiple quantum well structure, and the 2nd clad layer having the conduction type reverse from the conduction type of the 1st clad layer. CONSTITUTION:This optical modulator has the active layers in the form of the multiple quantum well structure laminated alternately with the 1st clad layer 22 having the 1st conduction type and consisting of In1-x1Gax1Asy1P1-y1 (0<<=x1<=1, 0<=y1<=1), the quantum well layer 24 consisting of In2-x2Gax2Asy2 P1-y2 (0<x2<1, 0y2<1), and a barrier layer 23 consisting of In1-x3Gax3Asy3P1-y3 (x2<x3, y2<y3) and having the forbidden band width wider than the forbidden band width of the quantum well layer 24 and the 2nd clad layer 26 having the conduction type reverse from the conduction type of the 1st clad layer 22 and consisting of In1-x4Gax4Asy4P1-y4 (0<=x4<1, 0<=y<=1) on an InP substrate 2. The high-speed optical modulator for which the quaternary quantum well layers are used and has a high electric field in the wavelength range useful for optical transmission and has high efficiency and low driving power is thereby obtd.
JP62190421A 1987-07-31 1987-07-31 Quantum well type optical modulator Expired - Lifetime JP2670051B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62190421A JP2670051B2 (en) 1987-07-31 1987-07-31 Quantum well type optical modulator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62190421A JP2670051B2 (en) 1987-07-31 1987-07-31 Quantum well type optical modulator

Publications (2)

Publication Number Publication Date
JPS6435525A true JPS6435525A (en) 1989-02-06
JP2670051B2 JP2670051B2 (en) 1997-10-29

Family

ID=16257856

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62190421A Expired - Lifetime JP2670051B2 (en) 1987-07-31 1987-07-31 Quantum well type optical modulator

Country Status (1)

Country Link
JP (1) JP2670051B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03119311A (en) * 1989-10-03 1991-05-21 Nec Corp Optical modulator
JP2004294840A (en) * 2003-03-27 2004-10-21 Japan Aviation Electronics Industry Ltd Electric absorption type optical modulator

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59151475A (en) * 1983-02-17 1984-08-29 Kokusai Denshin Denwa Co Ltd <Kdd> Hetero-structure avalanche-photodiode with buffer layer
JPS6066481A (en) * 1983-09-21 1985-04-16 Nec Corp Semiconductor photodetector
JPS623220A (en) * 1985-06-28 1987-01-09 Nec Corp Optical modulator
JPS62156617A (en) * 1985-10-17 1987-07-11 ブリテイシユ・テレコミユニケ−シヨンズ・パブリツク・リミテツド・カンパニ Electro-optical element
JPS62169115A (en) * 1986-01-21 1987-07-25 Nec Corp Optical modulator

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59151475A (en) * 1983-02-17 1984-08-29 Kokusai Denshin Denwa Co Ltd <Kdd> Hetero-structure avalanche-photodiode with buffer layer
JPS6066481A (en) * 1983-09-21 1985-04-16 Nec Corp Semiconductor photodetector
JPS623220A (en) * 1985-06-28 1987-01-09 Nec Corp Optical modulator
JPS62156617A (en) * 1985-10-17 1987-07-11 ブリテイシユ・テレコミユニケ−シヨンズ・パブリツク・リミテツド・カンパニ Electro-optical element
JPS62169115A (en) * 1986-01-21 1987-07-25 Nec Corp Optical modulator

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03119311A (en) * 1989-10-03 1991-05-21 Nec Corp Optical modulator
JP2004294840A (en) * 2003-03-27 2004-10-21 Japan Aviation Electronics Industry Ltd Electric absorption type optical modulator

Also Published As

Publication number Publication date
JP2670051B2 (en) 1997-10-29

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