JPS6435840A - Ion implanter - Google Patents

Ion implanter

Info

Publication number
JPS6435840A
JPS6435840A JP62191078A JP19107887A JPS6435840A JP S6435840 A JPS6435840 A JP S6435840A JP 62191078 A JP62191078 A JP 62191078A JP 19107887 A JP19107887 A JP 19107887A JP S6435840 A JPS6435840 A JP S6435840A
Authority
JP
Japan
Prior art keywords
ion beam
axis scanner
standby
upper electrode
time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62191078A
Other languages
Japanese (ja)
Inventor
Masahiko Nakatsuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62191078A priority Critical patent/JPS6435840A/en
Publication of JPS6435840A publication Critical patent/JPS6435840A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To prevent an increase of the one-side pollution of a Y-axis scanner by an ion beam at the time of standby by expanding the ion emission side section of the Y-axis scanner to the outside of the ion beam in an electrostatic scan type device. CONSTITUTION:A Y-axis scanner 4 is constituted of an upper electrode 10 and a lower electrode 11 and scans an ion beam in the vertical Y direction. An electron shutter action is performed at the time of ion beam radiation standby, thus the Y-axis scanner 4 scans the ion beam upward by 50 deg., for example, and a wafer is not radiated. The ion beam radiation side section 10a of the upper electrode 10 is expanded upward, and the upper electrode 10 is prevented from being polluted by the ion beam more than the lower electrode 11 at the time of standby. The ion beam scan in the Y direction thereby has less dispersion, and the ion beam is radiated satisfactorily.
JP62191078A 1987-07-30 1987-07-30 Ion implanter Pending JPS6435840A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62191078A JPS6435840A (en) 1987-07-30 1987-07-30 Ion implanter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62191078A JPS6435840A (en) 1987-07-30 1987-07-30 Ion implanter

Publications (1)

Publication Number Publication Date
JPS6435840A true JPS6435840A (en) 1989-02-06

Family

ID=16268498

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62191078A Pending JPS6435840A (en) 1987-07-30 1987-07-30 Ion implanter

Country Status (1)

Country Link
JP (1) JPS6435840A (en)

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