JPS6435841A - High-dose ion implanter - Google Patents
High-dose ion implanterInfo
- Publication number
- JPS6435841A JPS6435841A JP62190466A JP19046687A JPS6435841A JP S6435841 A JPS6435841 A JP S6435841A JP 62190466 A JP62190466 A JP 62190466A JP 19046687 A JP19046687 A JP 19046687A JP S6435841 A JPS6435841 A JP S6435841A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- gas
- ion
- arc
- ash3
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000002500 ions Chemical class 0.000 abstract 5
- 239000003463 adsorbent Substances 0.000 abstract 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 abstract 2
- 229910000070 arsenic hydride Inorganic materials 0.000 abstract 2
- 238000000354 decomposition reaction Methods 0.000 abstract 2
- 238000010884 ion-beam technique Methods 0.000 abstract 2
- 229910001260 Pt alloy Inorganic materials 0.000 abstract 1
- 238000010891 electric arc Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 238000001179 sorption measurement Methods 0.000 abstract 1
Abstract
PURPOSE:To capture and remove the unnecessary gas with an adsorbent, guiding only the necessary gas to an arc chamber, and obtain a high-dose ion implanting apparatus by inserting a gas decomposition chamber and a chamber filled with the adsorbent between a gas cylinder and the arc chamber. CONSTITUTION:AsH3 is guided to a decomposition chamber 8 from a gas cylinder, plasma is generated across electrodes 8a, 8b, and AsH3 is decomposed into As and H2. 90% or more of unnecessary H2 is captured by a Pt alloy 9a in an adsorption chamber 9, and the As gas is guided to the ion generation chamber 25 of an arc chamber 2 through a line 3. A filament 27 is excited to cause an arc discharge, As is ionized, the ionization is accelerated by the magnetic field of a magnet 26, and the ion density is increased. As ions are extracted by an electrode through a slit section 25 to form an ion beam A. The ion mass and charged quantity of the beam A are analyzed and detected by a detector, and the required ion beam thus obtained is implanted into a wafer. No solid source heating device is required, pollution is prevented, and the beam is smoothly stabilized.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62190466A JPS6435841A (en) | 1987-07-31 | 1987-07-31 | High-dose ion implanter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62190466A JPS6435841A (en) | 1987-07-31 | 1987-07-31 | High-dose ion implanter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6435841A true JPS6435841A (en) | 1989-02-06 |
Family
ID=16258582
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62190466A Pending JPS6435841A (en) | 1987-07-31 | 1987-07-31 | High-dose ion implanter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6435841A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100809138B1 (en) * | 2004-05-14 | 2008-02-29 | 닛신 이온기기 가부시기가이샤 | Ion implanting apparatus |
| WO2008136858A3 (en) * | 2006-11-08 | 2009-04-30 | Varian Semiconductor Equipment | Techniques for removing molecular fragments from an ion implanter |
-
1987
- 1987-07-31 JP JP62190466A patent/JPS6435841A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100809138B1 (en) * | 2004-05-14 | 2008-02-29 | 닛신 이온기기 가부시기가이샤 | Ion implanting apparatus |
| WO2008136858A3 (en) * | 2006-11-08 | 2009-04-30 | Varian Semiconductor Equipment | Techniques for removing molecular fragments from an ion implanter |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Muller et al. | Absolute ionisation cross sections for electrons incident on O+, Ne+, Xe+ and Ari+ (i= 1,..., 5) ions | |
| US6815666B2 (en) | Single stage accelerator mass spectrometer | |
| Ravn | Status and future development of ion sources for on-line mass separators | |
| US4793961A (en) | Method and source for producing a high concentration of positively charged molecular hydrogen or deuterium ions | |
| US4496843A (en) | Method for producing metal ions | |
| JPH07183001A (en) | Method and apparatus for producing ionic aluminum | |
| JPS62278736A (en) | Electron beam excited ion source | |
| Walther et al. | Production of atomic or molecular nitrogen ion beams using a multicusp and a microwave ion source | |
| SU854197A1 (en) | Source of negative ions | |
| JP2879342B2 (en) | Electron beam excited ion source | |
| JP2627420B2 (en) | Fast atom beam source | |
| RU2193914C1 (en) | Method of producing highly enriched isotopes from naturally occurring in low content isotopes in their separation in electromagnetic separator | |
| JP2869557B2 (en) | Electron beam excited ion source | |
| JP2000048734A (en) | High frequency ion source | |
| JPS5832200Y2 (en) | ion source device | |
| RU2076384C1 (en) | Plasma source of negative atomic ions | |
| Sampayan et al. | An improved ion source for ion implantation | |
| Taylor et al. | Atomic Energy of Canada Limited | |
| JPH09288981A (en) | Ion beam extraction method | |
| RU2118012C1 (en) | Ion implanter | |
| Towle et al. | Production of a nanosecond-pulsed He++ beam from a 5.5 MV Van de Graaff | |
| JPS6435842A (en) | High-dose ion implanter | |
| SU1107707A1 (en) | Method and apparatus for producing negative ions | |
| JP2002289106A (en) | Ion implanter | |
| JPH06208843A (en) | Negative ion implanting device |