JPS6435977A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS6435977A
JPS6435977A JP62190035A JP19003587A JPS6435977A JP S6435977 A JPS6435977 A JP S6435977A JP 62190035 A JP62190035 A JP 62190035A JP 19003587 A JP19003587 A JP 19003587A JP S6435977 A JPS6435977 A JP S6435977A
Authority
JP
Japan
Prior art keywords
layer
passage
wavelength
crystalline
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62190035A
Other languages
Japanese (ja)
Inventor
Shinji Sakano
Shinji Tsuji
Kazuhisa Uomi
Makoto Okai
Naoki Kayane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62190035A priority Critical patent/JPS6435977A/en
Publication of JPS6435977A publication Critical patent/JPS6435977A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To easily manufacture a variable wavelength laser and to improve productivity by altering a sectional structure in which effective refractive indices belonging to optical guide passages are different on the passages. CONSTITUTION:A diffraction grating 5 having a predetermined pitch is formed on a whole surface of an InP substrate 4. Then, a layer 1 (core layer) made of an InGaAsP including an active layer and having a high refractive index and a semiconductor clad layer 5 having a reverse polarity to that of the substrate are crystalline-grown. Then, The crystalline-grown layer is so removed by etching with a protective mask covering a crystal surface as to allow a ridge in which the width of an optical guide passage 1 is continuously varied from -1mum to -1.2mum to remain, and a region except the remaining region is buried with a clad layer 3 having a reverse junction. Eventually, electrodes 6-1-6-5 divided to 5 regions along the passage are formed, and an electrode 7 is formed on the opposite face. For example, if it is oscillated in a short wavelength, more current than that of the other region flows to an electrode 6-1 formed on a regin having a narrow width of the core layer of the passage. Thus, a laser in which its wavelength can be easily altered in a wide wavelength range is obtained.
JP62190035A 1987-07-31 1987-07-31 Semiconductor laser device Pending JPS6435977A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62190035A JPS6435977A (en) 1987-07-31 1987-07-31 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62190035A JPS6435977A (en) 1987-07-31 1987-07-31 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS6435977A true JPS6435977A (en) 1989-02-07

Family

ID=16251277

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62190035A Pending JPS6435977A (en) 1987-07-31 1987-07-31 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS6435977A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0814547A4 (en) * 1995-12-28 1999-03-24 Matsushita Electric Industrial Co Ltd SEMICONDUCTOR LASER AND MANUFACTURING METHOD THEREOF
US7474682B2 (en) * 2003-12-22 2009-01-06 Panasonic Corporation Semiconductor laser device and laser projector

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0814547A4 (en) * 1995-12-28 1999-03-24 Matsushita Electric Industrial Co Ltd SEMICONDUCTOR LASER AND MANUFACTURING METHOD THEREOF
US7474682B2 (en) * 2003-12-22 2009-01-06 Panasonic Corporation Semiconductor laser device and laser projector

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