JPS6436085A - Method and apparatus for forming functional deposition film by microwave plasma cvd method - Google Patents
Method and apparatus for forming functional deposition film by microwave plasma cvd methodInfo
- Publication number
- JPS6436085A JPS6436085A JP19040687A JP19040687A JPS6436085A JP S6436085 A JPS6436085 A JP S6436085A JP 19040687 A JP19040687 A JP 19040687A JP 19040687 A JP19040687 A JP 19040687A JP S6436085 A JPS6436085 A JP S6436085A
- Authority
- JP
- Japan
- Prior art keywords
- deposition
- wall
- deposition chamber
- temperature
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000008021 deposition Effects 0.000 title abstract 14
- 238000000034 method Methods 0.000 title abstract 2
- 238000000151 deposition Methods 0.000 title 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 title 1
- 238000010438 heat treatment Methods 0.000 abstract 4
- 238000001816 cooling Methods 0.000 abstract 3
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000002826 coolant Substances 0.000 abstract 1
- 230000006866 deterioration Effects 0.000 abstract 1
Landscapes
- Photoreceptors In Electrophotography (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE:To efficiently prevent the deterioration of the film quality due to the discharge of an impure gas from the inner wall of a deposition chamber by heating the inner wall of the deposition chamber up to a predetermined temperature before forming a deposition film, and cooling and holding the inner wall of the deposition chamber to a predetermined temperature in the process of forming the deposition film. CONSTITUTION:A deposition chamber 101 is evacuated, and the pressure within the deposition chamber is adjusted to 1X10<-7>Torrs or less. Then, by a heater 110, the inner wall 109 is heated and held to a predetermined temperature. At this time, the degree of vacuum and temperature are high vacuum and high temperature as compared with the formation of the deposition film, and the longer the better for the heating time, but it is particularly preferable to be held at 150 deg.C or higher. Then, the temperature of the base is heated and held to a temperature suitable for the film deposition by an internal heater for heating the base, and simultaneously therewith, a coolant for cooling is made to flow in a cooling pipe 111 to cool and hold the inner wall 109 of the deposition chamber to a predetermined temperature. At this time, the lower the better for the temperature of the inner wall 109 of the deposition chamber as compared with the temperatures at the times of heating and deposition of the deposition film, but it is particularly preferable to be held at 50 deg.C or lower.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19040687A JPS6436085A (en) | 1987-07-31 | 1987-07-31 | Method and apparatus for forming functional deposition film by microwave plasma cvd method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19040687A JPS6436085A (en) | 1987-07-31 | 1987-07-31 | Method and apparatus for forming functional deposition film by microwave plasma cvd method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6436085A true JPS6436085A (en) | 1989-02-07 |
Family
ID=16257614
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19040687A Pending JPS6436085A (en) | 1987-07-31 | 1987-07-31 | Method and apparatus for forming functional deposition film by microwave plasma cvd method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6436085A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5254171A (en) * | 1991-04-16 | 1993-10-19 | Sony Corporation | Bias ECR plasma CVD apparatus comprising susceptor, clamp, and chamber wall heating and cooling means |
| US5451259A (en) * | 1994-02-17 | 1995-09-19 | Krogh; Ole D. | ECR plasma source for remote processing |
| US5453125A (en) * | 1994-02-17 | 1995-09-26 | Krogh; Ole D. | ECR plasma source for gas abatement |
| WO1996013621A1 (en) * | 1994-10-31 | 1996-05-09 | Krogh Ole D | An ecr plasma source |
| GB2312990A (en) * | 1996-05-10 | 1997-11-12 | Sumitomo Chemical Co | MOVPE apparatus |
| EP0849811A3 (en) * | 1996-12-17 | 2000-05-24 | Canon Kabushiki Kaisha | Apparatus for forming non-single-crystal semiconductor thin film, method for forming non-single-crystal semiconductor thin film, and method for producing photovoltaic device |
| US6736930B1 (en) * | 1999-03-29 | 2004-05-18 | Tokyo Electron Limited | Microwave plasma processing apparatus for controlling a temperature of a wavelength reducing member |
| JP2012144386A (en) * | 2011-01-07 | 2012-08-02 | Denso Corp | Apparatus for producing silicon carbide single crystal |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6024377A (en) * | 1983-07-21 | 1985-02-07 | Canon Inc | Method and device for producing deposited film |
| JPS62151574A (en) * | 1985-12-25 | 1987-07-06 | Sumitomo Metal Ind Ltd | Plasma apparatus |
-
1987
- 1987-07-31 JP JP19040687A patent/JPS6436085A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6024377A (en) * | 1983-07-21 | 1985-02-07 | Canon Inc | Method and device for producing deposited film |
| JPS62151574A (en) * | 1985-12-25 | 1987-07-06 | Sumitomo Metal Ind Ltd | Plasma apparatus |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5254171A (en) * | 1991-04-16 | 1993-10-19 | Sony Corporation | Bias ECR plasma CVD apparatus comprising susceptor, clamp, and chamber wall heating and cooling means |
| US5451259A (en) * | 1994-02-17 | 1995-09-19 | Krogh; Ole D. | ECR plasma source for remote processing |
| US5453125A (en) * | 1994-02-17 | 1995-09-26 | Krogh; Ole D. | ECR plasma source for gas abatement |
| WO1996013621A1 (en) * | 1994-10-31 | 1996-05-09 | Krogh Ole D | An ecr plasma source |
| GB2312990A (en) * | 1996-05-10 | 1997-11-12 | Sumitomo Chemical Co | MOVPE apparatus |
| GB2312990B (en) * | 1996-05-10 | 1999-05-12 | Sumitomo Chemical Co | Device for production of compound semiconductor |
| US6100105A (en) * | 1996-05-10 | 2000-08-08 | Sumitomo Chemical Company, Ltd. | Fabrication of InGaAlN based compound semiconductor device |
| EP0849811A3 (en) * | 1996-12-17 | 2000-05-24 | Canon Kabushiki Kaisha | Apparatus for forming non-single-crystal semiconductor thin film, method for forming non-single-crystal semiconductor thin film, and method for producing photovoltaic device |
| US6736930B1 (en) * | 1999-03-29 | 2004-05-18 | Tokyo Electron Limited | Microwave plasma processing apparatus for controlling a temperature of a wavelength reducing member |
| JP2012144386A (en) * | 2011-01-07 | 2012-08-02 | Denso Corp | Apparatus for producing silicon carbide single crystal |
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