JPS6437487A - Growth of single crystal using high-pressure synthesis device and device therefor - Google Patents

Growth of single crystal using high-pressure synthesis device and device therefor

Info

Publication number
JPS6437487A
JPS6437487A JP19474887A JP19474887A JPS6437487A JP S6437487 A JPS6437487 A JP S6437487A JP 19474887 A JP19474887 A JP 19474887A JP 19474887 A JP19474887 A JP 19474887A JP S6437487 A JPS6437487 A JP S6437487A
Authority
JP
Japan
Prior art keywords
temperature
boat
single crystal
temperature part
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19474887A
Other languages
Japanese (ja)
Other versions
JPH08750B2 (en
Inventor
Kiyoteru Yoshida
Natami Nishibe
Toshio Kikuta
Yuzo Kashiyanagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Priority to JP19474887A priority Critical patent/JPH08750B2/en
Publication of JPS6437487A publication Critical patent/JPS6437487A/en
Publication of JPH08750B2 publication Critical patent/JPH08750B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To obtain high-quality single crystal of a compound semiconductor having extremely high dissociation pressure at a melting point in a short time and surely in growing single crystal of compound semiconductor by temperature-gradient coagulation method, by using constitution having proper thermal equilibrium in an electric furnace. CONSTITUTION:In growing single crystal of compound semiconductor by temperature-gradient coagulation method or horizontal Bridgman method under high pressure, the following constitution is added. Namely, a heat sink 10 is thermally connected to the end side of a seed 5 of a boat 3 and a cooling pipe 11 opening to the outside of low-temperature and high- temperature electric furnaces 6 and 7 is set in the circumference of the heat sink 10. Heat in the boat 3 is absorbed through the seed 5 in the side of the heat sink 10, the boat 3 is heated by an auxiliary heater 12 set on the circumference of the boat and heat is sent from the circumference of the boat 3 to melt in the boat 3. Heat insulating materials 16 and 17 are set between the low-temperature part 6 and the high-temperature part 7 of the electric furnaces to prevent heat transfer in the furnaces and temperature decrease between the low- temperature part 6 and the high-temperature part 7, heat insulating materials 15 and 14 and 13 (at both sides of quartz liner pipe 8) are set in the outside of the low-temperature part and the high-temperature part to prevent conviction in the furnaces.
JP19474887A 1987-08-04 1987-08-04 Single crystal growth method and apparatus using high-pressure synthesizer Expired - Lifetime JPH08750B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19474887A JPH08750B2 (en) 1987-08-04 1987-08-04 Single crystal growth method and apparatus using high-pressure synthesizer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19474887A JPH08750B2 (en) 1987-08-04 1987-08-04 Single crystal growth method and apparatus using high-pressure synthesizer

Publications (2)

Publication Number Publication Date
JPS6437487A true JPS6437487A (en) 1989-02-08
JPH08750B2 JPH08750B2 (en) 1996-01-10

Family

ID=16329574

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19474887A Expired - Lifetime JPH08750B2 (en) 1987-08-04 1987-08-04 Single crystal growth method and apparatus using high-pressure synthesizer

Country Status (1)

Country Link
JP (1) JPH08750B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01167294A (en) * 1987-12-24 1989-06-30 Asahi Glass Co Ltd Production of single crystal of group iii-v compound
US5161146A (en) * 1989-03-30 1992-11-03 Canon Kabushiki Kaisha Disc cleaning device
US5685907A (en) * 1994-06-02 1997-11-11 Kabushiki Kaisha Kobe Seiko Sho Apparatus for preparing compound single crystals
CN107619027A (en) * 2017-09-13 2018-01-23 南京金美镓业有限公司 A kind of pressure furnace compress control method for producing indium phosphide

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01167294A (en) * 1987-12-24 1989-06-30 Asahi Glass Co Ltd Production of single crystal of group iii-v compound
US5161146A (en) * 1989-03-30 1992-11-03 Canon Kabushiki Kaisha Disc cleaning device
US5685907A (en) * 1994-06-02 1997-11-11 Kabushiki Kaisha Kobe Seiko Sho Apparatus for preparing compound single crystals
CN107619027A (en) * 2017-09-13 2018-01-23 南京金美镓业有限公司 A kind of pressure furnace compress control method for producing indium phosphide

Also Published As

Publication number Publication date
JPH08750B2 (en) 1996-01-10

Similar Documents

Publication Publication Date Title
JPS6472984A (en) Apparatus for producing single crystal
DE3776333D1 (en) ARRANGEMENT FOR GROWING PROFILED MONOCRYSTALS.
EP0068021A1 (en) METHOD AND DEVICE FOR FORMING AND GROWING A SINGLE CRYSTAL OF A SEMICONDUCTOR CONNECTION.
MY115127A (en) Fractionation of a mixture of substances
KR970059321A (en) Rapid Cooling Method of CZ Silicon Crystal Growth System
NO160843C (en) PROCEDURE AND CONSTRUCTION IN CONNECTION WITH THE MANUFACTURE OF SILICON CARBID.
MY129966A (en) Method and device for producing monocrystals
JPH02145499A (en) Growing method for gallium arsenide single crystals
JPS5645894A (en) Reducing method for defect of silicon single crystal
CN216192880U (en) Reaction device for gallium nitride single crystal growth
CN209685955U (en) A kind of polycrystal synthesis furnace
JPH0234592A (en) Growing method for compound semiconductor single crystal
JPS62138385A (en) Device for pulling semiconductor single crystal
JPS5515939A (en) Production of single crystal
JP4956697B2 (en) Apparatus and method for producing silicon crystal for solar cell
JPS63319293A (en) Furnace for pulling and growing silicon single crystal
JPS62187193A (en) Method and device for growing single crystal
JPS57183393A (en) Apparatus for growing single crystal
JPS57209897A (en) Method and apparatus for preparation of single crystal of compound semiconductor
JPS60180989A (en) Manufacture of compound single crystal
JPS61136987A (en) Vessel for growing single crystal
GB2200576A (en) Method of growing single crystal of compound semiconductor and apparatus therefor
JPH0517289A (en) Method and apparatus for manufacturing compound semiconductor
JPS60215597A (en) Crucible for producing crystal
KR940021768A (en) Manganese-Zinc Ferrite Single Crystal Growth Method and Apparatus