JPS6437487A - Growth of single crystal using high-pressure synthesis device and device therefor - Google Patents
Growth of single crystal using high-pressure synthesis device and device thereforInfo
- Publication number
- JPS6437487A JPS6437487A JP19474887A JP19474887A JPS6437487A JP S6437487 A JPS6437487 A JP S6437487A JP 19474887 A JP19474887 A JP 19474887A JP 19474887 A JP19474887 A JP 19474887A JP S6437487 A JPS6437487 A JP S6437487A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- boat
- single crystal
- temperature part
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE:To obtain high-quality single crystal of a compound semiconductor having extremely high dissociation pressure at a melting point in a short time and surely in growing single crystal of compound semiconductor by temperature-gradient coagulation method, by using constitution having proper thermal equilibrium in an electric furnace. CONSTITUTION:In growing single crystal of compound semiconductor by temperature-gradient coagulation method or horizontal Bridgman method under high pressure, the following constitution is added. Namely, a heat sink 10 is thermally connected to the end side of a seed 5 of a boat 3 and a cooling pipe 11 opening to the outside of low-temperature and high- temperature electric furnaces 6 and 7 is set in the circumference of the heat sink 10. Heat in the boat 3 is absorbed through the seed 5 in the side of the heat sink 10, the boat 3 is heated by an auxiliary heater 12 set on the circumference of the boat and heat is sent from the circumference of the boat 3 to melt in the boat 3. Heat insulating materials 16 and 17 are set between the low-temperature part 6 and the high-temperature part 7 of the electric furnaces to prevent heat transfer in the furnaces and temperature decrease between the low- temperature part 6 and the high-temperature part 7, heat insulating materials 15 and 14 and 13 (at both sides of quartz liner pipe 8) are set in the outside of the low-temperature part and the high-temperature part to prevent conviction in the furnaces.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19474887A JPH08750B2 (en) | 1987-08-04 | 1987-08-04 | Single crystal growth method and apparatus using high-pressure synthesizer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19474887A JPH08750B2 (en) | 1987-08-04 | 1987-08-04 | Single crystal growth method and apparatus using high-pressure synthesizer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6437487A true JPS6437487A (en) | 1989-02-08 |
| JPH08750B2 JPH08750B2 (en) | 1996-01-10 |
Family
ID=16329574
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19474887A Expired - Lifetime JPH08750B2 (en) | 1987-08-04 | 1987-08-04 | Single crystal growth method and apparatus using high-pressure synthesizer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08750B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01167294A (en) * | 1987-12-24 | 1989-06-30 | Asahi Glass Co Ltd | Production of single crystal of group iii-v compound |
| US5161146A (en) * | 1989-03-30 | 1992-11-03 | Canon Kabushiki Kaisha | Disc cleaning device |
| US5685907A (en) * | 1994-06-02 | 1997-11-11 | Kabushiki Kaisha Kobe Seiko Sho | Apparatus for preparing compound single crystals |
| CN107619027A (en) * | 2017-09-13 | 2018-01-23 | 南京金美镓业有限公司 | A kind of pressure furnace compress control method for producing indium phosphide |
-
1987
- 1987-08-04 JP JP19474887A patent/JPH08750B2/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01167294A (en) * | 1987-12-24 | 1989-06-30 | Asahi Glass Co Ltd | Production of single crystal of group iii-v compound |
| US5161146A (en) * | 1989-03-30 | 1992-11-03 | Canon Kabushiki Kaisha | Disc cleaning device |
| US5685907A (en) * | 1994-06-02 | 1997-11-11 | Kabushiki Kaisha Kobe Seiko Sho | Apparatus for preparing compound single crystals |
| CN107619027A (en) * | 2017-09-13 | 2018-01-23 | 南京金美镓业有限公司 | A kind of pressure furnace compress control method for producing indium phosphide |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH08750B2 (en) | 1996-01-10 |
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