JPS6438209A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS6438209A
JPS6438209A JP19557187A JP19557187A JPS6438209A JP S6438209 A JPS6438209 A JP S6438209A JP 19557187 A JP19557187 A JP 19557187A JP 19557187 A JP19557187 A JP 19557187A JP S6438209 A JPS6438209 A JP S6438209A
Authority
JP
Japan
Prior art keywords
wafer
main surface
semiconductive
adhesive sheet
cut groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19557187A
Other languages
Japanese (ja)
Inventor
Fumimaro Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP19557187A priority Critical patent/JPS6438209A/en
Publication of JPS6438209A publication Critical patent/JPS6438209A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0052—Means for supporting or holding work during breaking

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Dicing (AREA)

Abstract

PURPOSE:To perform good cutting without damaging a pellet, by dicing a semiconductive wafer along the scribing line of one main surface thereof to provide a cut groove and subsequently bonding an adhesive sheet to the main surface of the semiconductive wafer before grinding the other main surface of the semiconductive wafer to divide said wafer into semiconductive pellets. CONSTITUTION:The wafer 1 is diced along the scribing line of one main surface thereof before the grinding of the back surface of the wafer 1 is performed to provide a cut groove. Next, a surface adhesive sheet 2 is bonded to one main surface of the wafer to fix and hold said wafer 1 to the surface adhesive sheet 2. Subsequently, the other main surface (back surface) of the wafer 1 is ground so as to reach the cut groove provided by dicing to divide the wafer 1 into indivisual pellets 3.
JP19557187A 1987-08-04 1987-08-04 Preparation of semiconductor device Pending JPS6438209A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19557187A JPS6438209A (en) 1987-08-04 1987-08-04 Preparation of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19557187A JPS6438209A (en) 1987-08-04 1987-08-04 Preparation of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6438209A true JPS6438209A (en) 1989-02-08

Family

ID=16343339

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19557187A Pending JPS6438209A (en) 1987-08-04 1987-08-04 Preparation of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6438209A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6184109B1 (en) 1997-07-23 2001-02-06 Kabushiki Kaisha Toshiba Method of dividing a wafer and method of manufacturing a semiconductor device
JP2001176822A (en) * 1999-12-16 2001-06-29 Disco Abrasive Syst Ltd Semiconductor wafer splitting method
US6294439B1 (en) 1997-07-23 2001-09-25 Kabushiki Kaisha Toshiba Method of dividing a wafer and method of manufacturing a semiconductor device
US6337258B1 (en) 1999-07-22 2002-01-08 Kabushiki Kaisha Toshiba Method of dividing a wafer
JP2005072140A (en) * 2003-08-21 2005-03-17 Lintec Corp Method of manufacturing semiconductor device and method of processing semiconductor wafer
SG114663A1 (en) * 2003-04-03 2005-09-28 Toshiba Kk Manufacturing method of semiconductor device
JP2009206534A (en) * 2002-03-12 2009-09-10 Hamamatsu Photonics Kk Method of forming cutting start area
US8058103B2 (en) 2003-09-10 2011-11-15 Hamamatsu Photonics K.K. Semiconductor substrate cutting method
US8865566B2 (en) 2002-12-03 2014-10-21 Hamamatsu Photonics K.K. Method of cutting semiconductor substrate
US8937264B2 (en) 2000-09-13 2015-01-20 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
KR20150085474A (en) 2014-01-15 2015-07-23 가부시기가이샤 디스코 Wafer processing method
CN107180891A (en) * 2017-04-11 2017-09-19 中国电子科技集团公司第十研究所 A kind of dicing method of infrared detector

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6184109B1 (en) 1997-07-23 2001-02-06 Kabushiki Kaisha Toshiba Method of dividing a wafer and method of manufacturing a semiconductor device
US6294439B1 (en) 1997-07-23 2001-09-25 Kabushiki Kaisha Toshiba Method of dividing a wafer and method of manufacturing a semiconductor device
US6337258B1 (en) 1999-07-22 2002-01-08 Kabushiki Kaisha Toshiba Method of dividing a wafer
JP2001176822A (en) * 1999-12-16 2001-06-29 Disco Abrasive Syst Ltd Semiconductor wafer splitting method
US10796959B2 (en) 2000-09-13 2020-10-06 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US9837315B2 (en) 2000-09-13 2017-12-05 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US8946591B2 (en) 2000-09-13 2015-02-03 Hamamatsu Photonics K.K. Method of manufacturing a semiconductor device formed using a substrate cutting method
US8946592B2 (en) 2000-09-13 2015-02-03 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US8937264B2 (en) 2000-09-13 2015-01-20 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
EP2400539A2 (en) 2002-03-12 2011-12-28 Hamamatsu Photonics K.K. Substrate dividing method
US9711405B2 (en) 2002-03-12 2017-07-18 Hamamatsu Photonics K.K. Substrate dividing method
JP2011243998A (en) * 2002-03-12 2011-12-01 Hamamatsu Photonics Kk Substrate having starting point region for cutting formed therein
JP2011216913A (en) * 2002-03-12 2011-10-27 Hamamatsu Photonics Kk Formation method of starting point region for cutting
US11424162B2 (en) 2002-03-12 2022-08-23 Hamamatsu Photonics K.K. Substrate dividing method
JP2011216912A (en) * 2002-03-12 2011-10-27 Hamamatsu Photonics Kk Controller for formation of starting point region for cutting
EP2194575A2 (en) 2002-03-12 2010-06-09 Hamamatsu Photonics K.K. Substrate Dividing Method
JP2009206534A (en) * 2002-03-12 2009-09-10 Hamamatsu Photonics Kk Method of forming cutting start area
EP3664131A2 (en) 2002-03-12 2020-06-10 Hamamatsu Photonics K. K. Substrate dividing method
US10622255B2 (en) 2002-03-12 2020-04-14 Hamamatsu Photonics K.K. Substrate dividing method
US10068801B2 (en) 2002-03-12 2018-09-04 Hamamatsu Photonics K.K. Substrate dividing method
EP3252806A1 (en) 2002-03-12 2017-12-06 Hamamatsu Photonics K.K. Substrate dividing method
US8865566B2 (en) 2002-12-03 2014-10-21 Hamamatsu Photonics K.K. Method of cutting semiconductor substrate
SG114663A1 (en) * 2003-04-03 2005-09-28 Toshiba Kk Manufacturing method of semiconductor device
JP2005072140A (en) * 2003-08-21 2005-03-17 Lintec Corp Method of manufacturing semiconductor device and method of processing semiconductor wafer
US8058103B2 (en) 2003-09-10 2011-11-15 Hamamatsu Photonics K.K. Semiconductor substrate cutting method
KR20150085474A (en) 2014-01-15 2015-07-23 가부시기가이샤 디스코 Wafer processing method
CN107180891A (en) * 2017-04-11 2017-09-19 中国电子科技集团公司第十研究所 A kind of dicing method of infrared detector

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