JPS643899A - Nonvolatile semiconductor memory device - Google Patents

Nonvolatile semiconductor memory device

Info

Publication number
JPS643899A
JPS643899A JP15869987A JP15869987A JPS643899A JP S643899 A JPS643899 A JP S643899A JP 15869987 A JP15869987 A JP 15869987A JP 15869987 A JP15869987 A JP 15869987A JP S643899 A JPS643899 A JP S643899A
Authority
JP
Japan
Prior art keywords
reading
writing
data
memory device
error
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15869987A
Other languages
Japanese (ja)
Other versions
JPH0646517B2 (en
Inventor
Norio Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP15869987A priority Critical patent/JPH0646517B2/en
Publication of JPS643899A publication Critical patent/JPS643899A/en
Publication of JPH0646517B2 publication Critical patent/JPH0646517B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Read Only Memory (AREA)

Abstract

PURPOSE:To prevent an error in reading and to extend a data storage period by providing a switch means between a data line and the ground level and grounding the data line after writing and reading. CONSTITUTION:When a stand-by mode is entered after writing or reading, a write signal W and a read signal R fall to low level to turn on pull-down transistors (TR) 21 and 22 through a NOR circuit 23, and data lines 21 and 22 are grounded. Thus, an error in reading due to the residual potentials of the data lines 21 and 22 after writing and reading is prevented and electrons leaking from the floating gates 9 and 10 of memory TRs 13 and 4 are reduced to prolong the data storage period.
JP15869987A 1987-06-24 1987-06-24 Nonvolatile semiconductor memory device Expired - Fee Related JPH0646517B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15869987A JPH0646517B2 (en) 1987-06-24 1987-06-24 Nonvolatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15869987A JPH0646517B2 (en) 1987-06-24 1987-06-24 Nonvolatile semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS643899A true JPS643899A (en) 1989-01-09
JPH0646517B2 JPH0646517B2 (en) 1994-06-15

Family

ID=15677424

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15869987A Expired - Fee Related JPH0646517B2 (en) 1987-06-24 1987-06-24 Nonvolatile semiconductor memory device

Country Status (1)

Country Link
JP (1) JPH0646517B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0428096A (en) * 1990-05-23 1992-01-30 Mitsubishi Electric Corp Non-volatile semiconductor memory device
JPH1027490A (en) * 1996-07-10 1998-01-27 Toshiba Corp Nonvolatile semiconductor memory device
US6466483B1 (en) * 2001-02-08 2002-10-15 Advanced Micro Devices, Inc. Piggyback programming using timing control for multi-level cell flash memory designs
JP2008293648A (en) * 2008-08-05 2008-12-04 Renesas Technology Corp Semiconductor memory device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6061995A (en) * 1983-09-13 1985-04-09 Toshiba Corp Semiconductor memory

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6061995A (en) * 1983-09-13 1985-04-09 Toshiba Corp Semiconductor memory

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0428096A (en) * 1990-05-23 1992-01-30 Mitsubishi Electric Corp Non-volatile semiconductor memory device
JPH1027490A (en) * 1996-07-10 1998-01-27 Toshiba Corp Nonvolatile semiconductor memory device
US6466483B1 (en) * 2001-02-08 2002-10-15 Advanced Micro Devices, Inc. Piggyback programming using timing control for multi-level cell flash memory designs
JP2008293648A (en) * 2008-08-05 2008-12-04 Renesas Technology Corp Semiconductor memory device

Also Published As

Publication number Publication date
JPH0646517B2 (en) 1994-06-15

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees