JPS6439084A - Josephson element - Google Patents

Josephson element

Info

Publication number
JPS6439084A
JPS6439084A JP62195696A JP19569687A JPS6439084A JP S6439084 A JPS6439084 A JP S6439084A JP 62195696 A JP62195696 A JP 62195696A JP 19569687 A JP19569687 A JP 19569687A JP S6439084 A JPS6439084 A JP S6439084A
Authority
JP
Japan
Prior art keywords
axis
barrier layer
tunnel barrier
parallel
superconductors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62195696A
Other languages
Japanese (ja)
Inventor
Kazuyoshi Kojima
Kyozo Kanemoto
Yasuki Tokuda
Shigemitsu Maruno
Teruhito Matsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62195696A priority Critical patent/JPS6439084A/en
Publication of JPS6439084A publication Critical patent/JPS6439084A/en
Pending legal-status Critical Current

Links

Landscapes

  • Superconductor Devices And Manufacturing Methods Thereof (AREA)

Abstract

PURPOSE:To obtain a Josephson element having a large critical current value, by making the direction of the C axis of a crystal structure substantially in parallel with respect to a tunnel barrier layer. CONSTITUTION:Superconductors 1 and 3 are arranged, with a tunnel barrier layer 2 inbetween. The tunnel barrier layer 2 is constituted so that the layer is substantially in parallel with the a C axis (direction of an arrow C). Namely, yttrium-barium-copper based oxide superconductors are formed on a substrate comprising, e.g., strontium titanate by a sputtering method. Then, the superconductors having a crystal structure, whose C axis is in parallel with the substrate, is obtained. As the tunnel barrier layer 2 thereon, e.g., yttrium oxide is formed by an evaporation method or a sputtering method. Thus a Josephson element can be manufactured. When a current is made to flow in a plane, which is perpendicular to the C axis, a large critical current can be obtained.
JP62195696A 1987-08-04 1987-08-04 Josephson element Pending JPS6439084A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62195696A JPS6439084A (en) 1987-08-04 1987-08-04 Josephson element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62195696A JPS6439084A (en) 1987-08-04 1987-08-04 Josephson element

Publications (1)

Publication Number Publication Date
JPS6439084A true JPS6439084A (en) 1989-02-09

Family

ID=16345472

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62195696A Pending JPS6439084A (en) 1987-08-04 1987-08-04 Josephson element

Country Status (1)

Country Link
JP (1) JPS6439084A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04111368A (en) * 1990-08-30 1992-04-13 Mitsubishi Electric Corp Formation method for oxide superconductor film
JPH04167578A (en) * 1990-10-31 1992-06-15 Sumitomo Electric Ind Ltd Superconducting circuit and its fabrication method
US5126868A (en) * 1988-12-27 1992-06-30 Casio Computer Co., Ltd. Color compensated double layered liquid crystal display device
FR2675951A1 (en) * 1991-04-23 1992-10-30 Thomson Csf JOSEPHSON JUNCTION STRUCTURE.
US5232903A (en) * 1987-05-06 1993-08-03 Semiconductor Energy Laboratory Co., Ltd. Oxide superconducting device having uniform oxygen concentration
JPH0677545A (en) * 1992-08-24 1994-03-18 Nippon Telegr & Teleph Corp <Ntt> Superconducting thin film vertical junction device and manufacturing method thereof
US5488030A (en) * 1990-09-20 1996-01-30 Sumitomo Electric Industries, Inc. Superconductor junction structure including two oxide superconductor layers separated by a non-superconducting layer
US5593950A (en) * 1992-07-28 1997-01-14 Nippon Telegraph & Telephone Corporation Lattice matching super conducting device with a- and c- axes

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5232903A (en) * 1987-05-06 1993-08-03 Semiconductor Energy Laboratory Co., Ltd. Oxide superconducting device having uniform oxygen concentration
US5126868A (en) * 1988-12-27 1992-06-30 Casio Computer Co., Ltd. Color compensated double layered liquid crystal display device
JPH04111368A (en) * 1990-08-30 1992-04-13 Mitsubishi Electric Corp Formation method for oxide superconductor film
US5488030A (en) * 1990-09-20 1996-01-30 Sumitomo Electric Industries, Inc. Superconductor junction structure including two oxide superconductor layers separated by a non-superconducting layer
JPH04167578A (en) * 1990-10-31 1992-06-15 Sumitomo Electric Ind Ltd Superconducting circuit and its fabrication method
FR2675951A1 (en) * 1991-04-23 1992-10-30 Thomson Csf JOSEPHSON JUNCTION STRUCTURE.
US5378683A (en) * 1991-04-23 1995-01-03 Thomson-Csf Josephson junction structure
US5593950A (en) * 1992-07-28 1997-01-14 Nippon Telegraph & Telephone Corporation Lattice matching super conducting device with a- and c- axes
JPH0677545A (en) * 1992-08-24 1994-03-18 Nippon Telegr & Teleph Corp <Ntt> Superconducting thin film vertical junction device and manufacturing method thereof

Similar Documents

Publication Publication Date Title
CA2052970C (en) Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing the same
JPS6486574A (en) Superconducting device
JPS6466978A (en) Manufacture of superconducting element
US5750474A (en) Method for manufacturing a superconductor-insulator-superconductor Josephson tunnel junction
GR3017972T3 (en) High-Tc microbridge superconductor device utilizing stepped edge-to-edge sns junction.
KR900015364A (en) Tunnel Josephson element and its manufacturing method
US5378683A (en) Josephson junction structure
JPS6452329A (en) Superconductor
CA2052508A1 (en) Method for manufacturing superconducting device having a reduced thickness of oxide superconducting layer and superconducting device manufactured thereby
CA2052378A1 (en) Superconducting device and a method for manufacturing the same
CA2084556A1 (en) Method for manufacturing an artificial grain boundary type josephson junction device
JPS6451680A (en) Oxide ceramics laminated layer structure and its manufacture
EP0488837A2 (en) Method for manufacturing superconducting device having a reduced thickness of oxide superconducting layer and superconducting device manufactured thereby
CA2085172A1 (en) Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing the same
EP0494830A2 (en) Method for manufacturing tunnel junction type josephson device composed of compound oxide superconductor material
JPS6454770A (en) Superconducting device
JPS6435971A (en) Superconductor device
JPS6417314A (en) Thin film superconductor
JPS6411380A (en) Manufacture of josephson element
JPS6463215A (en) High temperature superconductive material
JP3016566B2 (en) Superconducting switch element
JPH0336771A (en) Weak coupling type josephson junction element
JPS6489571A (en) Semiconductor device and manufacture thereof
JPH05160448A (en) Abrupt josephson device
JPS6464380A (en) Superconducting transistor