JPS6439657U - - Google Patents

Info

Publication number
JPS6439657U
JPS6439657U JP13445587U JP13445587U JPS6439657U JP S6439657 U JPS6439657 U JP S6439657U JP 13445587 U JP13445587 U JP 13445587U JP 13445587 U JP13445587 U JP 13445587U JP S6439657 U JPS6439657 U JP S6439657U
Authority
JP
Japan
Prior art keywords
diode
type layer
junction
cover
flows
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13445587U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP13445587U priority Critical patent/JPS6439657U/ja
Publication of JPS6439657U publication Critical patent/JPS6439657U/ja
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Formation Of Insulating Films (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Description

【図面の簡単な説明】
第１図は本考案の第１実施例の断面図、第２図
は本考案の第２実施例の断面図である。 １はｐ形層、２はｎ形層、４はｐｎ接合部、８
はシリコン系樹脂、８ａは被覆層、９・１２はカ
バーガラスである。

Claims (1)

  1. 【実用新案登録請求の範囲】 ｐ形層とｎ形層との間にｐｎ接合部を備えると
    ともに、表面側と裏面側の少なくとも一方にカバ
    ーガラスを樹脂にて接着したダイオードにおいて
    、 上記樹脂によりダイオード側面へ流出してダイ
    オード側面に露出したｐｎ接合部を被覆する被覆
    層を形成したことを特徴とするダイオード。
JP13445587U 1987-09-02 1987-09-02 Pending JPS6439657U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13445587U JPS6439657U (ja) 1987-09-02 1987-09-02

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13445587U JPS6439657U (ja) 1987-09-02 1987-09-02

Publications (1)

Publication Number Publication Date
JPS6439657U true JPS6439657U (ja) 1989-03-09

Family

ID=31393224

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13445587U Pending JPS6439657U (ja) 1987-09-02 1987-09-02

Country Status (1)

Country Link
JP (1) JPS6439657U (ja)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6094751A (ja) * 1983-10-28 1985-05-27 Sumitomo Electric Ind Ltd ダイオ−ド
JPS61151614A (ja) * 1984-12-26 1986-07-10 Semiconductor Energy Lab Co Ltd 半導体装置作製方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6094751A (ja) * 1983-10-28 1985-05-27 Sumitomo Electric Ind Ltd ダイオ−ド
JPS61151614A (ja) * 1984-12-26 1986-07-10 Semiconductor Energy Lab Co Ltd 半導体装置作製方法

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