JPS644067A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS644067A JPS644067A JP62159306A JP15930687A JPS644067A JP S644067 A JPS644067 A JP S644067A JP 62159306 A JP62159306 A JP 62159306A JP 15930687 A JP15930687 A JP 15930687A JP S644067 A JPS644067 A JP S644067A
- Authority
- JP
- Japan
- Prior art keywords
- grow
- oxide film
- layer
- type
- epitaxial layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 238000009933 burial Methods 0.000 abstract 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 5
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 230000003647 oxidation Effects 0.000 abstract 2
- 238000007254 oxidation reaction Methods 0.000 abstract 2
- 238000000059 patterning Methods 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 238000001312 dry etching Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To make an epitaxial layer on a first burial layer uniform and to form a second burial layer in desired depth, by making the epitaxial layer grow after the forming of the first burial layer and providing anisotropic etching to a fixed depth for a part where a second burial layer is formed, by making a thin oxide film grow so as to form a second burial layer, and then by removing the oxide film and then making an epitaxial layer grow. CONSTITUTION:A silicon oxide film 2 is made to grow on a P type silicon substrate 1, and selective patterning is used to bury a first N type burial layer 3 into a silicon opening part under an atmosphere of oxygen. After a silicon oxide film 2 is removed, an N type first epitaxial layer 4 is made to grow and heat oxidation is performed to make an silicon oxide film 5 grow. A similar method is used to perform selective patterning, and the N type epitaxial layer 4 is etched to a degree so as to form a recessed part by anisotropic dry etching. Next heat oxidation processing is used to make a thin silicon oxide film 6 on the N type epitaxial layer 4, and afterwards ion implantation of the N type impurities is performed to form a second N type burial layer 7. Next the thin silicon oxide film 6 formed in the preceding process is removed by a hydrofluoric acid solution and so an epitaxial layer 8 is made to grow.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62159306A JPS644067A (en) | 1987-06-25 | 1987-06-25 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62159306A JPS644067A (en) | 1987-06-25 | 1987-06-25 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS644067A true JPS644067A (en) | 1989-01-09 |
Family
ID=15690920
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62159306A Pending JPS644067A (en) | 1987-06-25 | 1987-06-25 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS644067A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5869796A (en) * | 1997-02-05 | 1999-02-09 | Mitsubishi Denki Kabushiki Kaisha | Contact device |
-
1987
- 1987-06-25 JP JP62159306A patent/JPS644067A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5869796A (en) * | 1997-02-05 | 1999-02-09 | Mitsubishi Denki Kabushiki Kaisha | Contact device |
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