JPS644073A - Power transistor with protective function against overheating - Google Patents

Power transistor with protective function against overheating

Info

Publication number
JPS644073A
JPS644073A JP62157599A JP15759987A JPS644073A JP S644073 A JPS644073 A JP S644073A JP 62157599 A JP62157599 A JP 62157599A JP 15759987 A JP15759987 A JP 15759987A JP S644073 A JPS644073 A JP S644073A
Authority
JP
Japan
Prior art keywords
region
gate
make
tunnel current
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62157599A
Other languages
English (en)
Inventor
Tamotsu Tominaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Motor Co Ltd
Original Assignee
Nissan Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Motor Co Ltd filed Critical Nissan Motor Co Ltd
Priority to JP62157599A priority Critical patent/JPS644073A/ja
Publication of JPS644073A publication Critical patent/JPS644073A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP62157599A 1987-06-26 1987-06-26 Power transistor with protective function against overheating Pending JPS644073A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62157599A JPS644073A (en) 1987-06-26 1987-06-26 Power transistor with protective function against overheating

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62157599A JPS644073A (en) 1987-06-26 1987-06-26 Power transistor with protective function against overheating

Publications (1)

Publication Number Publication Date
JPS644073A true JPS644073A (en) 1989-01-09

Family

ID=15653236

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62157599A Pending JPS644073A (en) 1987-06-26 1987-06-26 Power transistor with protective function against overheating

Country Status (1)

Country Link
JP (1) JPS644073A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5493144A (en) * 1992-03-31 1996-02-20 Sgs-Thomson Microelectronics, Inc. Field progammable device with contact openings
US6236088B1 (en) * 1997-06-30 2001-05-22 Intersil Corporation Semiconductor device gate structure for thermal overload protection

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5493144A (en) * 1992-03-31 1996-02-20 Sgs-Thomson Microelectronics, Inc. Field progammable device with contact openings
US5856233A (en) * 1992-03-31 1999-01-05 Stmicroelectronics, Inc. Method of forming a field programmable device
US6236088B1 (en) * 1997-06-30 2001-05-22 Intersil Corporation Semiconductor device gate structure for thermal overload protection

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