JPS6442665U - - Google Patents

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Publication number
JPS6442665U
JPS6442665U JP1987137943U JP13794387U JPS6442665U JP S6442665 U JPS6442665 U JP S6442665U JP 1987137943 U JP1987137943 U JP 1987137943U JP 13794387 U JP13794387 U JP 13794387U JP S6442665 U JPS6442665 U JP S6442665U
Authority
JP
Japan
Prior art keywords
photometry
light receiving
receiving area
solid
state image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1987137943U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1987137943U priority Critical patent/JPS6442665U/ja
Publication of JPS6442665U publication Critical patent/JPS6442665U/ja
Pending legal-status Critical Current

Links

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  • Transforming Light Signals Into Electric Signals (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの考案の固体撮像素子の一例を示す
構成図、第2図は一眼レフタイプのカメラの構成
図、第3図は従来の一眼レフタイプ以外のカメラ
の構成図である。 1……固体撮像素子、1A……半導体基体、2
……被写体、4……測光用受光エリア、5……結
像面、8……拡散板、12……遮光板、13……
測光信号取出線、14……電極。
FIG. 1 is a block diagram showing an example of the solid-state image pickup device of this invention, FIG. 2 is a block diagram of a single-lens reflex camera, and FIG. 3 is a block diagram of a conventional camera other than the single-lens reflex type. 1...Solid-state image sensor, 1A...Semiconductor substrate, 2
...Subject, 4... Light receiving area for photometry, 5... Image forming surface, 8... Diffusion plate, 12... Light shielding plate, 13...
Photometric signal output line, 14...electrode.

Claims (1)

【実用新案登録請求の範囲】 結像面が形成されたと、同一の半導体基体上の
所定領域に測光用受光エリアを設け、 該測光用受光エリアにおいて被写体の輝度を測
光するようにしたことを特徴とする固体撮像素子
[Claims for Utility Model Registration] Once the imaging plane is formed, a light receiving area for photometry is provided in a predetermined area on the same semiconductor substrate, and the brightness of the subject is measured in the light receiving area for photometry. A solid-state image sensor.
JP1987137943U 1987-09-09 1987-09-09 Pending JPS6442665U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1987137943U JPS6442665U (en) 1987-09-09 1987-09-09

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1987137943U JPS6442665U (en) 1987-09-09 1987-09-09

Publications (1)

Publication Number Publication Date
JPS6442665U true JPS6442665U (en) 1989-03-14

Family

ID=31399830

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1987137943U Pending JPS6442665U (en) 1987-09-09 1987-09-09

Country Status (1)

Country Link
JP (1) JPS6442665U (en)

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