JPS6444449A - Resist pattern forming method - Google Patents

Resist pattern forming method

Info

Publication number
JPS6444449A
JPS6444449A JP62199781A JP19978187A JPS6444449A JP S6444449 A JPS6444449 A JP S6444449A JP 62199781 A JP62199781 A JP 62199781A JP 19978187 A JP19978187 A JP 19978187A JP S6444449 A JPS6444449 A JP S6444449A
Authority
JP
Japan
Prior art keywords
pattern
profile
resist
mask
distance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62199781A
Other languages
Japanese (ja)
Inventor
Tetsuo Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62199781A priority Critical patent/JPS6444449A/en
Publication of JPS6444449A publication Critical patent/JPS6444449A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To lessen the change of the shape in a formed pattern, even when the lag of the focal point in a projected image exists, by using a mask having the pattern with a different profile from that of a prescribed resist pattern in the titled method. CONSTITUTION:When the pattern is formed by projectively exposing a photomask pattern on a resist mounted on a substrate, followed by developing it, the photomask having the pattern with the different profile from that of the prescribed resist pattern is used. For example, in order to obtain a resist line with the prescribed profile 2, the profile 3 of a mask line pattern is positioned in the inner side of a line part 1 than the profile 2 separating from the line part 1 by a distance 4. And, in order to obtain a resist space pattern 16, the mask is formed in such way that the profile 18 of a light shielding part 17 of the mask separates from the profile 16 of a resist space by the distance 4. And, the distance 4 is preferably adjusted so as to be a range of 0.1-0.2mum according to the kind of an exposure device to be used.
JP62199781A 1987-08-12 1987-08-12 Resist pattern forming method Pending JPS6444449A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62199781A JPS6444449A (en) 1987-08-12 1987-08-12 Resist pattern forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62199781A JPS6444449A (en) 1987-08-12 1987-08-12 Resist pattern forming method

Publications (1)

Publication Number Publication Date
JPS6444449A true JPS6444449A (en) 1989-02-16

Family

ID=16413502

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62199781A Pending JPS6444449A (en) 1987-08-12 1987-08-12 Resist pattern forming method

Country Status (1)

Country Link
JP (1) JPS6444449A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5546225A (en) * 1991-08-22 1996-08-13 Nikon Corporation High resolution printing technique by using improved mask pattern and improved illumination system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5546225A (en) * 1991-08-22 1996-08-13 Nikon Corporation High resolution printing technique by using improved mask pattern and improved illumination system

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