JPS644473A - Sputtering device - Google Patents

Sputtering device

Info

Publication number
JPS644473A
JPS644473A JP15779787A JP15779787A JPS644473A JP S644473 A JPS644473 A JP S644473A JP 15779787 A JP15779787 A JP 15779787A JP 15779787 A JP15779787 A JP 15779787A JP S644473 A JPS644473 A JP S644473A
Authority
JP
Japan
Prior art keywords
target
gas
inlet part
gaseous
nozzle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15779787A
Other languages
Japanese (ja)
Inventor
Hiromi Kakinuma
Yoshihiro Usui
Hiroshi Chiga
Haruo Sugiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Ulvac Inc
Original Assignee
Mitsubishi Electric Corp
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp, Ulvac Inc filed Critical Mitsubishi Electric Corp
Priority to JP15779787A priority Critical patent/JPS644473A/en
Publication of JPS644473A publication Critical patent/JPS644473A/en
Pending legal-status Critical Current

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  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To adjust the gas flow rate and gas pressure distribution and to prevent the deterioration in the quality of a film formed on a substrate by providing plural nozzles of the title sputtering device in the vicinity of a target, and making the conductance of each nozzle freely adjustable. CONSTITUTION:A gas inlet part 4 is provided in the vicinity of the target 13 and in parallel with the long side of the target 3. The upper gaseous O2 inlet part 4a of the gas inlet part 4 is placed on the lower gaseous Ar inlet part 4b. The reactive gaseous O2 is injected toward the target 13 from the nozzle 12a, and inert gaseous Ar is injected from the nozzle 12b. The amt. of the gas to be injected is adjusted by the male screws 14a and 14b. By this method, the gas flow rate is uniformized, the gas pressure distribution is improved, the deterioration in the quality of a film to be formed on the substrate is prevented, and the number of the substrates to be treated is increased.
JP15779787A 1987-06-26 1987-06-26 Sputtering device Pending JPS644473A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15779787A JPS644473A (en) 1987-06-26 1987-06-26 Sputtering device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15779787A JPS644473A (en) 1987-06-26 1987-06-26 Sputtering device

Publications (1)

Publication Number Publication Date
JPS644473A true JPS644473A (en) 1989-01-09

Family

ID=15657497

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15779787A Pending JPS644473A (en) 1987-06-26 1987-06-26 Sputtering device

Country Status (1)

Country Link
JP (1) JPS644473A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02225663A (en) * 1989-02-27 1990-09-07 Tokuda Seisakusho Ltd Sputtering device
JPH02131547U (en) * 1989-03-29 1990-11-01
US5340459A (en) * 1991-11-22 1994-08-23 Nec Corporation Reactive sputtering system
JPH0790572A (en) * 1993-04-22 1995-04-04 Balzers Ag Apparatus and method for introduction of gas
JPH10212575A (en) * 1997-01-29 1998-08-11 Sony Corp Sputtering equipment
JP2007332434A (en) * 2006-06-16 2007-12-27 Showa Shinku:Kk Deposition equipment
JP2008266794A (en) * 1997-09-10 2008-11-06 Sony Corp Gas ejection adjustment device for vacuum chamber
WO2023132130A1 (en) * 2022-01-07 2023-07-13 芝浦機械株式会社 Surface treatment device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6137964A (en) * 1984-07-30 1986-02-22 Matsushita Electric Ind Co Ltd sputtering equipment

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6137964A (en) * 1984-07-30 1986-02-22 Matsushita Electric Ind Co Ltd sputtering equipment

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02225663A (en) * 1989-02-27 1990-09-07 Tokuda Seisakusho Ltd Sputtering device
JPH02131547U (en) * 1989-03-29 1990-11-01
US5340459A (en) * 1991-11-22 1994-08-23 Nec Corporation Reactive sputtering system
JPH0790572A (en) * 1993-04-22 1995-04-04 Balzers Ag Apparatus and method for introduction of gas
JPH10212575A (en) * 1997-01-29 1998-08-11 Sony Corp Sputtering equipment
JP2008266794A (en) * 1997-09-10 2008-11-06 Sony Corp Gas ejection adjustment device for vacuum chamber
JP2007332434A (en) * 2006-06-16 2007-12-27 Showa Shinku:Kk Deposition equipment
WO2023132130A1 (en) * 2022-01-07 2023-07-13 芝浦機械株式会社 Surface treatment device

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