JPS644641B2 - - Google Patents
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- Publication number
- JPS644641B2 JPS644641B2 JP57092525A JP9252582A JPS644641B2 JP S644641 B2 JPS644641 B2 JP S644641B2 JP 57092525 A JP57092525 A JP 57092525A JP 9252582 A JP9252582 A JP 9252582A JP S644641 B2 JPS644641 B2 JP S644641B2
- Authority
- JP
- Japan
- Prior art keywords
- resistance
- film
- resistive
- films
- insulating substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010408 film Substances 0.000 claims description 77
- 239000000758 substrate Substances 0.000 claims description 18
- 239000010409 thin film Substances 0.000 claims description 9
- 238000005520 cutting process Methods 0.000 description 6
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 4
- 229910001120 nichrome Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 230000007261 regionalization Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Non-Adjustable Resistors (AREA)
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は、抵抗値を調整しうる薄膜抵抗回路
に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a thin film resistance circuit whose resistance value can be adjusted.
従来、絶縁基板上に第１図に示すようなパター
ンをもつて抵抗膜Ａを形成し、この抵抗膜Ａのイ
の部分あるいはロの部分をレーザービーム等によ
り選択的に切断し抵抗値を調整するラダー型の薄
膜抵抗回路が存する。たとえば第２図のように切
断した場合の上昇した抵抗値ΔRは次式で表わさ
れる。
Conventionally, a resistive film A is formed on an insulating substrate with a pattern as shown in Figure 1, and the resistance value is adjusted by selectively cutting the A part or B part of the resistive film A with a laser beam, etc. There is a ladder type thin film resistor circuit. For example, the increased resistance value ΔR when cut as shown in FIG. 2 is expressed by the following equation.
ΔR＝R0×２×ｌ／ｗ＋R0×２×0.65／ｗ
である。ただし、第３図において抵抗膜１の部分
を示すが、ｌはハの部分の長さ、ｗはパターンの
幅、R0は抵抗膜Ａの面積抵抗である。ハの部分
の抵抗値の上昇は（R0×２×ｌ／ｗ）であるが、ハ
とニとの間のホのコーナ部の抵抗値の上昇は
（R0×２×0.65／ｗ）であることは経験的に知られて
いる。 ΔR=R 0 ×2×l/w+R 0 ×2×0.65/w. However, in FIG. 3, a portion of the resistive film 1 is shown, where l is the length of the portion C, w is the width of the pattern, and R 0 is the area resistance of the resistive film A. The increase in the resistance value of the part C is (R 0 × 2 × l/w), but the increase in the resistance value of the corner part of E between C and D is (R 0 × 2 × 0.65/w) It is known empirically that
このように、ホのコーナ部が存するパターンで
は抵抗値の上昇が大きく、微調整は困難である。
したがつて、たとえば荷重を電気信号に変換して
出力する歪センサにおけるブリツジ回路の温度ド
リフトに対する零点補正を行なうものとしては精
度が粗い。 As described above, in the pattern where the corner portion E exists, the resistance value increases greatly, and fine adjustment is difficult.
Therefore, the accuracy is low for zero point correction for temperature drift of a bridge circuit in a strain sensor that converts a load into an electrical signal and outputs it, for example.
すなわち、第４図に示すように、歪センサのブ
リツジ回路はそれぞれR1、R2、R3、R4の抵抗値
をもつストレンゲージにより形成され、入力電圧
をVE、出力電圧をVOとすれば、
VO＝VE・（R2／R1＋R2−R3／R3＋R4）
となる。R1、R2、R3、R4の抵抗値が等しければ
VOは零となるが各抵抗値にバラツキがあるとVO
は零にならない。 That is, as shown in Fig. 4, the bridge circuit of the strain sensor is formed by strain gauges having resistance values of R 1 , R 2 , R 3 , and R 4 , respectively, and the input voltage is V E and the output voltage is V O . Then, VO = VE・(R 2 /R 1 +R 2 −R 3 /R 3 +R 4 ). If the resistance values of R 1 , R 2 , R 3 , and R 4 are equal
V O becomes zero, but if there are variations in each resistance value, V O
does not become zero.
たとえば、抵抗値R1、R3、R4が等しく、抵抗
値R2のみがΔR分だけ差がある値、すなわちR2＝
Ｒ＋ΔRとするときの出力電圧VOは、
ΔVO＝VE・（Ｒ＋ΔR／2R＋ΔR−１／２）＝VE・ΔR
／4R＋2ΔR
となる。ストレンゲージ抵抗体の面積抵抗R0＝
10Ω、VE＝10V、Ｒ＝1KΩ、ΔVO＝１ｍＶのと
きのΔRを求めると、
ΔVO／VE＝ΔR／4R＋2ΔR
１ｍＶ／10×103ｍＶ＝ΔR／４×1000Ω＋2ΔR
したがつて、ΔR≒0.4Ω
となる。 For example, the resistance values R 1 , R 3 , and R 4 are equal, and only the resistance value R 2 differs by ΔR, that is, R 2 =
The output voltage V O when R + ΔR is ΔV O = V E・(R+ΔR/2R+ΔR−1/2)=V E・ΔR
/4R+2ΔR. Area resistance of strain gauge resistor R 0 =
10Ω, V E = 10V, R = 1KΩ, and ΔV O = 1 mV, find ΔR: ΔV O /V E = ΔR/4R + 2ΔR 1 mV/10×10 3 mV = ΔR/4×1000 Ω + 2ΔR Therefore, ΔR ≒0.4Ω.
ΔR＝R0・ｌ／ｗよりｌ／ｗを求めると、ΔR＝0.4Ω
、
R0＝10Ωであるので、ｌ／ｗ＝0.04＝１／25となる。 ΔR=R 0・L/w to find l/w, ΔR=0.4Ω
, R 0 =10Ω, so l/w=0.04=1/25.
したがつて、ラダー型のパターンでは補正が不
可能である。 Therefore, correction is not possible with a ladder-type pattern.
このような問題を解決したものとして、実開昭
48−43944号公報に記載された構造のものが提案
されている。すなわち、相対向する導体電極の間
にそれらの導体電極の隅部を除いた対向部分から
引き出された複数の抵抗膜を並列に形成したもの
である。このような構造を採用することにより、
どの抵抗膜を切断してもコーナ部の影響を受ける
ことなく、理論的に正しい調整を行うことができ
るものである。 As a solution to these problems, Jitsukaiaki
A structure described in Japanese Patent No. 48-43944 has been proposed. That is, a plurality of resistive films are formed in parallel between opposing conductor electrodes and drawn out from opposing portions of the conductor electrodes excluding the corners. By adopting such a structure,
No matter which resistive film is cut, theoretically correct adjustment can be made without being affected by the corners.
しかして、抵抗調整範囲を拡大するためには、
前述のように形成した抵抗調整部を複数個直列に
接続することが効果的である。 Therefore, in order to expand the resistance adjustment range,
It is effective to connect a plurality of resistance adjustment sections formed as described above in series.
他方、薄膜技術により形成された抵抗膜を切断
するには、レーザー光線が利用される。そのた
め、導体電極の間で互いに並列に接続されている
複数個の抵抗膜の切断に当つては、中間部の抵抗
膜を切断することは難しく、端に位置する抵抗膜
から内方に向けて切断する作業が容易である。し
かしながら、通常の場合には、中間部に存する抵
抗膜を独立的に切断しなければならない場合が多
く、不用意に他の回路部分にレーザー光線を照射
してしまつてその回路を損傷することが多い。 On the other hand, laser beams are used to cut resistive films formed by thin film technology. Therefore, when cutting multiple resistive films that are connected in parallel between the conductor electrodes, it is difficult to cut the middle resistive film, and it is difficult to cut the resistive film in the middle from the resistive film located at the end inward. Easy to cut. However, in normal cases, it is often necessary to cut the resistive film in the middle part independently, and other circuit parts are often inadvertently irradiated with laser beams, causing damage to those circuits. .
この発明は、このような点に鑑みなされたもの
で、抵抗膜の切断作業が容易であり、安定した調
整作業を行うことができる薄膜抵抗回路を提供す
ることを目的とする。
The present invention has been made in view of the above points, and an object of the present invention is to provide a thin film resistance circuit in which the cutting operation of the resistance film is easy and the adjustment operation can be performed stably.
この発明は、絶縁基板上に、間隔をあけて配列
された導電性の良好な導電膜の間を選択的に切断
される複数の抵抗膜により並列に接続してなる抵
抗調整部を形成した薄膜抵抗回路において、前記
抵抗調整部の前記抵抗膜をそれぞれ抵抗値の異な
る複数種の抵抗膜により形成し、複数個の前記抵
抗調整部を直列に接続し、これらの抵抗調整部の
それぞれにおいて前記絶縁基板の一方の縁部側に
位置する抵抗膜を抵抗値の異なる前記抵抗膜を位
置させて形成したものである。したがつて、抵抗
調整部の抵抗膜の切断に当つては、各抵抗調整部
の抵抗膜がそれぞれ抵抗値の異なるものが絶縁基
板の一方の縁部側に位置しているため、レーザー
光線を絶縁基板の一方の縁部から内方へ向けて移
動させる動作で必要とする抵抗値の抵抗膜を選ぶ
ことができ、これにより、レーザー光線の移動動
作が回路の他の部分を損傷するおそれのない状態
であり、安定した抵抗調整を行うことができるよ
うに構成したものである。
The present invention provides a thin film in which a resistance adjusting section is formed by connecting in parallel a plurality of resistive films that are selectively cut between conductive films with good conductivity arranged at intervals on an insulating substrate. In the resistance circuit, the resistance film of the resistance adjustment section is formed of a plurality of types of resistance films each having a different resistance value, a plurality of the resistance adjustment sections are connected in series, and the insulation film is formed in each of these resistance adjustment sections. The resistive film located on one edge side of the substrate is formed by positioning the resistive films having different resistance values. Therefore, when cutting the resistance film of the resistance adjustment part, the resistance films of each resistance adjustment part with different resistance values are located on one edge side of the insulating substrate, so it is necessary to insulate the laser beam. You can choose a resistive film with the resistance you need for the inward movement from one edge of the board, so that the movement of the laser beam does not damage other parts of the circuit. The structure is such that stable resistance adjustment can be performed.
この発明の一実施例を第５図ないし第８図に基
いて説明する。１は絶縁基板である。この絶縁基
板１上には第５図に示すようにNiCr膜２（ある
いはTaN膜）が形成され、その上層に導電性の
きわめて良好なAu膜３が形成されている。そし
て、これらのNiCr膜２とAu膜３とを選択的にエ
ツチングして第６図に示すパターンを形成し、さ
らに、第３図に示すようにハツチングした部分に
ついてAu膜３をエツチングしてNiCr膜２を露出
させる。これにより、絶縁基板１上にAu膜３に
よるリード電極４，５と複数の導電膜６とが形成
されるとともに、NiCr膜２による抵抗膜７と抵
抗膜８，９とが形成されている。導電膜６は後述
する抵抗調整部を複数形成するために最少三個必
要とし、一端に位置する導電膜６はリード電極５
と一体化されている。他端の導電膜６は前記抵抗
膜７を介して前記リード電極４に接続されてい
る。そして、ブロツク毎に隣接する導電膜６間に
は抵抗膜８，９が並列に接続され、これにより、
ブロツク別に抵抗調整部１０，１０が複数形成さ
れている。
An embodiment of the present invention will be explained based on FIGS. 5 to 8. 1 is an insulating substrate. As shown in FIG. 5, a NiCr film 2 (or TaN film) is formed on this insulating substrate 1, and an Au film 3 having extremely good conductivity is formed on top of the NiCr film 2 (or TaN film). Then, these NiCr film 2 and Au film 3 are selectively etched to form the pattern shown in FIG. 6, and the Au film 3 is further etched in the hatched areas as shown in FIG. Membrane 2 is exposed. As a result, lead electrodes 4 and 5 made of the Au film 3 and a plurality of conductive films 6 are formed on the insulating substrate 1, as well as a resistive film 7 and resistive films 8 and 9 made of the NiCr film 2. A minimum of three conductive films 6 are required in order to form a plurality of resistance adjustment parts to be described later, and the conductive film 6 located at one end is used as the lead electrode 5.
It is integrated with. The conductive film 6 at the other end is connected to the lead electrode 4 via the resistive film 7. Resistive films 8 and 9 are connected in parallel between the adjacent conductive films 6 for each block, so that
A plurality of resistance adjustment sections 10, 10 are formed for each block.
前記抵抗膜８，９はそれぞれ幅の異なるもの
で、抵抗膜８は抵抗膜９よりもその幅が狭く、抵
抗値が高い。しかも、前記抵抗調整部１０のそれ
ぞれにおいて前記絶縁基板１の一方の縁部側に位
置する抵抗膜８，９を抵抗値の異なる前記抵抗膜
を位置させて形成してある。すなわち、互いに直
列接続された二つの抵抗調整部１０において、一
方の抵抗調整部１０が抵抗膜８を縁部側に位置さ
せているとすると、他方の抵抗調整部１０におい
ては抵抗膜９が縁部側に位置している。 The resistive films 8 and 9 have different widths, and the resistive film 8 has a narrower width and a higher resistance value than the resistive film 9. Moreover, in each of the resistance adjustment sections 10, the resistance films 8 and 9 located on one edge side of the insulating substrate 1 are formed so that the resistance films having different resistance values are located. That is, in the two resistance adjusting sections 10 connected in series, if one of the resistance adjusting sections 10 has the resistive film 8 located on the edge side, then the resistive film 9 of the other resistance adjusting section 10 is located on the edge side. It is located on the side.
このような構成において、各抵抗調整部１０に
おける合成抵抗は、抵抗膜８の抵抗を5rとし、抵
抗膜９の抵抗をｒとしたときに5/6ｒである。い
ずれの抵抗膜８，９をレーザービーム等により切
断すると抵抗の調整が行なわれる。すなわち、抵
抗膜８を切断したときは、
5r−５／６ｒ＝25／６ｒ
の抵抗変化があり粗調整が行なわれ、抵抗膜９を
切断したときは
ｒ−５／６ｒ＝１／６ｒ
の抵抗変化があり微調整が行なわれる。さらに、
このようにして抵抗調整部１０毎に調整された抵
抗値は直列の合成抵抗として総和されて変化す
る。したがつて、調整範囲も広く、粗から微に至
るまで自由に抵抗値を調整することが可能であ
る。その抵抗値も理論値として正確に設定しう
る。 In such a configuration, the combined resistance in each resistance adjustment section 10 is 5/6r, where the resistance of the resistive film 8 is 5r and the resistance of the resistive film 9 is r. The resistance is adjusted by cutting either of the resistive films 8 and 9 with a laser beam or the like. That is, when the resistive film 8 is cut, there is a resistance change of 5r - 5/6r = 25/6r, and rough adjustment is performed, and when the resistive film 9 is cut, the resistance is r - 5/6r = 1/6r. Changes occur and fine adjustments are made. moreover,
The resistance values adjusted for each resistance adjustment section 10 in this manner are summed and changed as a series combined resistance. Therefore, the adjustment range is wide, and the resistance value can be freely adjusted from coarse to fine. The resistance value can also be accurately set as a theoretical value.
しかして、抵抗膜８，９の切断は、レーザー光
線により行うが、調整すべき抵抗値により、抵抗
値の大きい抵抗膜８を切断するか、抵抗値の小さ
い抵抗膜９を切断するかが選択される。その場
合、レーザー光線の動作方向はいずれの時にも縁
部側から内方へ向かう動作であり、内方にある抵
抗膜８，９を切断する必要はない。そのため、調
整作業が容易であり、不要な部分を損傷するおそ
れがなく、安全である。 Therefore, the resistive films 8 and 9 are cut by a laser beam, and depending on the resistance value to be adjusted, it is selected whether to cut the resistive film 8 with a large resistance value or the resistive film 9 with a small resistance value. Ru. In this case, the direction of operation of the laser beam is always inward from the edge, and there is no need to cut the resistive films 8 and 9 located inward. Therefore, adjustment work is easy, there is no risk of damaging unnecessary parts, and it is safe.
このようにして自由に抵抗値を調整することが
できる抵抗を、たとえば歪センサのブリツジ回路
の入力側に接続することにより、スパン温度補償
抵抗として用いられ、また、ブリツジ回路中に接
続すれば、温度ドリフトに対するブリツジ回路の
出力の零点補正抵抗として用いられ、いずれにし
ても精度のきわめて高い調整を行なうことが可能
である。 By connecting a resistor whose resistance value can be freely adjusted in this way, for example, to the input side of the bridge circuit of a strain sensor, it can be used as a span temperature compensation resistor, and if it is connected in the bridge circuit, It is used as a zero point correction resistor for the output of the bridge circuit against temperature drift, and in any case it is possible to perform adjustment with extremely high precision.
この発明は上述のように、絶縁基板上に、間隔
をあけて配列された導電性の良好な導電膜の間を
選択的に切断される複数の抵抗膜により並列に接
続してなる抵抗調整部を形成した薄膜抵抗回路に
おいて、前記抵抗調整部の前記抵抗膜をそれぞれ
抵抗値の異なる複数種の抵抗膜により形成し、複
数個の前記抵抗調整部を直列に接続し、これらの
抵抗調整部のそれぞれにおいて前記絶縁基板の一
方の縁部側に位置する抵抗膜を抵抗値の異なる前
記抵抗膜を位置させて形成したので、抵抗調整部
の抵抗膜の切断に当つては、各抵抗調整部の抵抗
膜がそれぞれ抵抗値の異なるものが絶縁基板の一
方の縁部側に位置しているため、レーザー光線を
絶縁基板の一方の縁部から内方へ向けて移動させ
る動作で必要とする抵抗値の抵抗膜を選ぶことが
でき、これにより、レーザー光線の移動動作が回
路の他の部分を損するおそれのない状態であり、
安定した抵抗調整を行うことができると云う効果
を有する。
As described above, the present invention provides a resistance adjusting unit formed by connecting in parallel a plurality of resistive films, which are selectively cut between conductive films with good conductivity arranged at intervals on an insulating substrate. In the thin film resistor circuit, the resistance film of the resistance adjustment section is formed of a plurality of types of resistance films each having a different resistance value, and the plurality of resistance adjustment sections are connected in series. In each case, the resistive film located on one edge side of the insulating substrate was formed by positioning the resistive films with different resistance values, so when cutting the resistive film of the resistance adjusting part, the resistive film of each resistance adjusting part was Since the resistive films with different resistance values are located on one edge of the insulating substrate, the resistance value required for the operation of moving the laser beam inward from one edge of the insulating substrate is A resistive film can be selected, so that the moving action of the laser beam does not threaten to damage other parts of the circuit.
This has the effect that stable resistance adjustment can be performed.
第１図ないし第３図は従来の薄膜抵抗回路のパ
ターンを示す説明図、第４図は歪センサ等におけ
るブリツジ回路図、第５図ないし第９図はこの発
明の一実施例を示すもので、第５図はパターン形
成前の絶縁基板の側面図、第６図及び第７図はパ
ターン形成過程を示す絶縁基板の平面図、第８図
はパターン形成後の絶縁基板の側面図である。
１……絶縁基板、６……導電膜、８〜９……抵
抗膜、１０……抵抗調整部。
Figures 1 to 3 are explanatory diagrams showing patterns of conventional thin film resistance circuits, Figure 4 is a bridge circuit diagram for a strain sensor, etc., and Figures 5 to 9 are illustrations of an embodiment of the present invention. , FIG. 5 is a side view of the insulating substrate before pattern formation, FIGS. 6 and 7 are plan views of the insulating substrate showing the pattern formation process, and FIG. 8 is a side view of the insulating substrate after pattern formation. DESCRIPTION OF SYMBOLS 1... Insulating substrate, 6... Conductive film, 8-9... Resistance film, 10... Resistance adjustment part.
Claims (1)
性の良好な導電膜の間を選択的に切断される複数
の抵抗膜により並列に接続してなる抵抗調整部を
形成した薄膜抵抗回路において、前記抵抗調整部
の前記抵抗膜をそれぞれ抵抗値の異なる複数種の
抵抗膜により形成し、複数個の前記抵抗調整部を
直列に接続し、これらの抵抗調整部のそれぞれに
おいて前記絶縁基板の一方の縁部側に位置する抵
抗膜を抵抗値の異なる前記抵抗膜を位置させて形
成したことを特徴とする薄膜抵抗回路。1. In a thin film resistor circuit in which a resistance adjusting section is formed by connecting in parallel a plurality of resistive films that are selectively cut between conductive films with good conductivity arranged at intervals on an insulating substrate. , the resistance film of the resistance adjustment section is formed of a plurality of types of resistance films each having a different resistance value, the plurality of resistance adjustment sections are connected in series, and in each of these resistance adjustment sections, one side of the insulating substrate is formed. 1. A thin film resistor circuit characterized in that the resistive films located on the edge side of the resistive film are formed by positioning the resistive films having different resistance values.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57092525A JPS58209101A (en) | 1982-05-31 | 1982-05-31 | Thin film resistance circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57092525A JPS58209101A (en) | 1982-05-31 | 1982-05-31 | Thin film resistance circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58209101A JPS58209101A (en) | 1983-12-06 |
| JPS644641B2 true JPS644641B2 (en) | 1989-01-26 |
Family
ID=14056755
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57092525A Granted JPS58209101A (en) | 1982-05-31 | 1982-05-31 | Thin film resistance circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58209101A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5474440B2 (en) * | 2009-08-04 | 2014-04-16 | シャープ株式会社 | Heater, fixing device and charging device using the heater, and image forming apparatus using the fixing device or charging device |
-
1982
- 1982-05-31 JP JP57092525A patent/JPS58209101A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58209101A (en) | 1983-12-06 |
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