JPS6447024A - Formation of pattern - Google Patents

Abstract

PURPOSE:To form resist patterns, each having roughly vertical sidewalls, by a method wherein a P-type resist is applied to on the surface of a matter to be processed and after a pattern exposure finished, the surface of the resist is exposed to a plasma-containing atmosphere and thereafter, a developing is performed. CONSTITUTION:A novolak resin P-type resist 2 is applied to the whole surface of an Si substrate 1 by a spin-on coating method and is formed in a film thickness of 1.0mum or thereabouts. After that, a prebaking is performed to volatilize the organic solvent in the film 2. A pattern exposure is performed on a desired part alone of the film 2 with a KrF excimer laser beam 3 of a wavelength of 248nm. When the whole substrate 1 which ended an exposure is exposed to a CF4 gas plasma-containing atmosphere 4 for about one minute, the surface of the film 2 is cured by the radical reaction of the CF4 gas and the resistance to a developing solution of the cured part is increased. A developing is performed to remove parts, which are irradiated with light, of the film 2 and lastly, a baking is performed to obtain patterns of a desired form.