JPS6447032A - Formation of surface protective film for semiconductor device - Google Patents
Formation of surface protective film for semiconductor deviceInfo
- Publication number
- JPS6447032A JPS6447032A JP20481787A JP20481787A JPS6447032A JP S6447032 A JPS6447032 A JP S6447032A JP 20481787 A JP20481787 A JP 20481787A JP 20481787 A JP20481787 A JP 20481787A JP S6447032 A JPS6447032 A JP S6447032A
- Authority
- JP
- Japan
- Prior art keywords
- film
- surface protective
- film thickness
- laser
- protective film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000001681 protective effect Effects 0.000 title abstract 4
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 150000004767 nitrides Chemical class 0.000 abstract 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- 229910021529 ammonia Inorganic materials 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 238000001182 laser chemical vapour deposition Methods 0.000 abstract 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract 1
- 239000012495 reaction gas Substances 0.000 abstract 1
- 229910000077 silane Inorganic materials 0.000 abstract 1
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To offer a surface protective film having a small residual stress by a method wherein an Si nitride film, which is formed by a laser CVD method, and an Si nitride film, which is formed by a plasma CVD method, are alternately laminated on a base to form the surface protective film of a multilayer structure while the respective film thicknesses are controlled. CONSTITUTION:Reaction gas is excited with a laser beam 42, and a laser CVD-SiN film is formed in such a way that its film thickness becomes a film thickness of 500Angstrom , for example, by controlling a laser irradiation time. A laser oscillator 38 is stopped, and exhaust velocity and a gas flow rate are changed, silane and ammonia are respectively introduced at partial pressures of 30 Pa and 150 Pa and a high-frequency power of a frequency of 13.56MHz is applied to an upper electrode 44 to generate plasma between the electrode 44 and a lower electrode 32. This applying time is controlled and a PCVD-SiN film 26 is laminated on the CVD-SiN film 24 in such a way that its line width becomes the same submicron line width as that of the film 24 and its film thickness becomes the same film thickness of 500Angstrom as that of the film 24. After this, the films are alternately laminated up to reach a desired total film thickness (such as 8000Angstrom ) to form a surface protective film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20481787A JPS6447032A (en) | 1987-08-18 | 1987-08-18 | Formation of surface protective film for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20481787A JPS6447032A (en) | 1987-08-18 | 1987-08-18 | Formation of surface protective film for semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6447032A true JPS6447032A (en) | 1989-02-21 |
Family
ID=16496873
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20481787A Pending JPS6447032A (en) | 1987-08-18 | 1987-08-18 | Formation of surface protective film for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6447032A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02292826A (en) * | 1989-05-06 | 1990-12-04 | Sony Corp | Semiconductor device |
| JPH0474426A (en) * | 1990-07-16 | 1992-03-09 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| US5912597A (en) * | 1994-03-31 | 1999-06-15 | Canon Kabushiki Kaisha | Printed circuit board |
| US6215076B1 (en) | 1996-03-28 | 2001-04-10 | Canon Kabushiki Kaisha | Printed circuit board with noise suppression |
| JP2007511877A (en) * | 2003-11-14 | 2007-05-10 | コミサリア、ア、レネルジ、アトミク | Lithium microbattery provided with a protective jacket and method for producing the microbattery |
| JP2007115598A (en) * | 2005-10-21 | 2007-05-10 | Matsushita Electric Ind Co Ltd | Electrical device |
| JP2013546169A (en) * | 2010-10-06 | 2013-12-26 | アプライド マテリアルズ インコーポレイテッド | PECVD oxide-nitride stack and oxide-silicon stack for 3D memory application |
-
1987
- 1987-08-18 JP JP20481787A patent/JPS6447032A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02292826A (en) * | 1989-05-06 | 1990-12-04 | Sony Corp | Semiconductor device |
| JPH0474426A (en) * | 1990-07-16 | 1992-03-09 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| US5912597A (en) * | 1994-03-31 | 1999-06-15 | Canon Kabushiki Kaisha | Printed circuit board |
| US6215076B1 (en) | 1996-03-28 | 2001-04-10 | Canon Kabushiki Kaisha | Printed circuit board with noise suppression |
| JP2007511877A (en) * | 2003-11-14 | 2007-05-10 | コミサリア、ア、レネルジ、アトミク | Lithium microbattery provided with a protective jacket and method for producing the microbattery |
| JP2007115598A (en) * | 2005-10-21 | 2007-05-10 | Matsushita Electric Ind Co Ltd | Electrical device |
| JP2013546169A (en) * | 2010-10-06 | 2013-12-26 | アプライド マテリアルズ インコーポレイテッド | PECVD oxide-nitride stack and oxide-silicon stack for 3D memory application |
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