JPS6447273A - Switching power unit - Google Patents

Switching power unit

Info

Publication number
JPS6447273A
JPS6447273A JP62201616A JP20161687A JPS6447273A JP S6447273 A JPS6447273 A JP S6447273A JP 62201616 A JP62201616 A JP 62201616A JP 20161687 A JP20161687 A JP 20161687A JP S6447273 A JPS6447273 A JP S6447273A
Authority
JP
Japan
Prior art keywords
winding
transformer
output winding
waveform
couple
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62201616A
Other languages
Japanese (ja)
Other versions
JP2546283B2 (en
Inventor
Masayuki Yasumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP62201616A priority Critical patent/JP2546283B2/en
Publication of JPS6447273A publication Critical patent/JPS6447273A/en
Application granted granted Critical
Publication of JP2546283B2 publication Critical patent/JP2546283B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Television Receiver Circuits (AREA)
  • Dc-Dc Converters (AREA)

Abstract

PURPOSE:To improve the reliability by winding and loading so as to make a transformer-couple of an output winding of low voltage supplied to a secondary control circuit of a power transformer with the other secondary output winding uniformly. CONSTITUTION:A switching power unit is constituted of a rectifier circuit 2 for commercial AC input power 1, a smoothing condenser 3, a transistor Tr Q1 for switching, a satuable reactor transformer 21, a series resonator with a condenser 22 and a primary winding Na, an oscillation driving circuit 24 and so on. At this time, the secondary winding N3 of a power transformer 23 is wound and loaded at approx. constant pitch so as to make a transformer- couple with the other secondary winding N2, N4-N6 uniformly. And, a connecting point P1 is connected to the base of a Tr Q3 constituting a control circuit 25 through a resistor R6. Accordingly, a waveform of the current 1D flowing to a diode D1 for rectification connected to the output winding N3 of low voltage is a sine waveform as well as the current waveform of the other secondary output winding.
JP62201616A 1987-08-12 1987-08-12 Switching power supply Expired - Fee Related JP2546283B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62201616A JP2546283B2 (en) 1987-08-12 1987-08-12 Switching power supply

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62201616A JP2546283B2 (en) 1987-08-12 1987-08-12 Switching power supply

Publications (2)

Publication Number Publication Date
JPS6447273A true JPS6447273A (en) 1989-02-21
JP2546283B2 JP2546283B2 (en) 1996-10-23

Family

ID=16444013

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62201616A Expired - Fee Related JP2546283B2 (en) 1987-08-12 1987-08-12 Switching power supply

Country Status (1)

Country Link
JP (1) JP2546283B2 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007077666A1 (en) * 2005-12-28 2007-07-12 Nec Corporation Field effect transistor, and multilayered epitaxial film for use in preparation of field effect transistor
JP2008251966A (en) * 2007-03-30 2008-10-16 Fujitsu Ltd Semiconductor epitaxial substrate, compound semiconductor device, and manufacturing method thereof
JP2010165934A (en) * 2009-01-16 2010-07-29 Furukawa Electric Co Ltd:The Semiconductor electronic device
WO2011055774A1 (en) * 2009-11-06 2011-05-12 日本碍子株式会社 Epitaxial substrate for semiconductor element, semiconductor element, and method for producing epitaxial substrate for semiconductor element
JP2013004924A (en) * 2011-06-21 2013-01-07 Sumitomo Electric Ind Ltd Semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007077666A1 (en) * 2005-12-28 2007-07-12 Nec Corporation Field effect transistor, and multilayered epitaxial film for use in preparation of field effect transistor
JP2008251966A (en) * 2007-03-30 2008-10-16 Fujitsu Ltd Semiconductor epitaxial substrate, compound semiconductor device, and manufacturing method thereof
JP2010165934A (en) * 2009-01-16 2010-07-29 Furukawa Electric Co Ltd:The Semiconductor electronic device
WO2011055774A1 (en) * 2009-11-06 2011-05-12 日本碍子株式会社 Epitaxial substrate for semiconductor element, semiconductor element, and method for producing epitaxial substrate for semiconductor element
JP2013004924A (en) * 2011-06-21 2013-01-07 Sumitomo Electric Ind Ltd Semiconductor device

Also Published As

Publication number Publication date
JP2546283B2 (en) 1996-10-23

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees