JPS645018A - Dry etching method - Google Patents

Dry etching method

Info

Publication number
JPS645018A
JPS645018A JP16021987A JP16021987A JPS645018A JP S645018 A JPS645018 A JP S645018A JP 16021987 A JP16021987 A JP 16021987A JP 16021987 A JP16021987 A JP 16021987A JP S645018 A JPS645018 A JP S645018A
Authority
JP
Japan
Prior art keywords
layer
etching
taper
mask layer
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16021987A
Other languages
Japanese (ja)
Inventor
Hitoshi Yonemura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP16021987A priority Critical patent/JPS645018A/en
Publication of JPS645018A publication Critical patent/JPS645018A/en
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To form a taper with excellent controllability and few process, by forming a taper by applying anisotropic dry etching, and forming the taper in a layer to be etched by utilizing a side-wall art. CONSTITUTION:On a silicon substrate 8, an SiO2 film 9 serving as a stopper layer of etching is formed, on which a layer 1 to be etched and the resist of a first etching mask layer 2 are formed. An intermediate layer 3 composed of silicon having etching characteristics different from the mask layer 2 is formed by a sputtering method, and thereon, a second etching mask layer 4 having the same resist as the mask layer 2 is formed. After that, a side-wall 6 is formed on a side-wall part 5 by a side-wall art. By etching, the intermediate layer 3 and the layer 1 to be etched are eliminated to form a taper 7, and the first etching mask layer 2 and the intermediate layer 3 are eliminated in order.
JP16021987A 1987-06-27 1987-06-27 Dry etching method Pending JPS645018A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16021987A JPS645018A (en) 1987-06-27 1987-06-27 Dry etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16021987A JPS645018A (en) 1987-06-27 1987-06-27 Dry etching method

Publications (1)

Publication Number Publication Date
JPS645018A true JPS645018A (en) 1989-01-10

Family

ID=15710300

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16021987A Pending JPS645018A (en) 1987-06-27 1987-06-27 Dry etching method

Country Status (1)

Country Link
JP (1) JPS645018A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05188148A (en) * 1992-01-13 1993-07-30 Hamamatsu Photonics Kk Radiation detecting element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05188148A (en) * 1992-01-13 1993-07-30 Hamamatsu Photonics Kk Radiation detecting element

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