JPS645030A - Semiconductor integrated circuit device of gate array system - Google Patents

Semiconductor integrated circuit device of gate array system

Info

Publication number
JPS645030A
JPS645030A JP16057387A JP16057387A JPS645030A JP S645030 A JPS645030 A JP S645030A JP 16057387 A JP16057387 A JP 16057387A JP 16057387 A JP16057387 A JP 16057387A JP S645030 A JPS645030 A JP S645030A
Authority
JP
Japan
Prior art keywords
contact
sense amplifier
integrated circuit
semiconductor integrated
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16057387A
Other languages
Japanese (ja)
Inventor
Toshihiro Tsukagoshi
Hiromi Iwamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP16057387A priority Critical patent/JPS645030A/en
Publication of JPS645030A publication Critical patent/JPS645030A/en
Pending legal-status Critical Current

Links

Landscapes

  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)

Abstract

PURPOSE:To utilize the chip area of a semiconductor integrated circuit, by making a sense amplifier serve as a sense amplifier for a read/write memory or a sense amplifier for a read-only memory. CONSTITUTION:In the case where a sense amplifier part 45 is operated as a sense amplifier for an MROM, a contact 91a and a contact 91c, a contact 92a and a contact 92c, and a contact 93a and a contact 93c are conneted by metal option on a slice. In the case where the sense amplifier 45 is operated as a sense amplifier for an SRAM, a contact 91b and the contact 91c, a contact 92b and the contact 92c, and a contact 93b and the contact 93c are connected by the metal option on the slice. Therefore, a useless region which is not used on a master slice as in the case of prior examples is not occupied. The effective utilization of the chip area of a semiconductor integrated circuit is enabled, thereby.
JP16057387A 1987-06-26 1987-06-26 Semiconductor integrated circuit device of gate array system Pending JPS645030A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16057387A JPS645030A (en) 1987-06-26 1987-06-26 Semiconductor integrated circuit device of gate array system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16057387A JPS645030A (en) 1987-06-26 1987-06-26 Semiconductor integrated circuit device of gate array system

Publications (1)

Publication Number Publication Date
JPS645030A true JPS645030A (en) 1989-01-10

Family

ID=15717888

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16057387A Pending JPS645030A (en) 1987-06-26 1987-06-26 Semiconductor integrated circuit device of gate array system

Country Status (1)

Country Link
JP (1) JPS645030A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04206279A (en) * 1990-11-29 1992-07-28 Fujitsu Ltd Connector
JP2020009508A (en) * 2018-07-03 2020-01-16 富士通セミコンダクター株式会社 Resistance change type memory and control method of resistance change type memory

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04206279A (en) * 1990-11-29 1992-07-28 Fujitsu Ltd Connector
JP2020009508A (en) * 2018-07-03 2020-01-16 富士通セミコンダクター株式会社 Resistance change type memory and control method of resistance change type memory

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