JPS6450480A - Sic blue light emitting element - Google Patents
Sic blue light emitting elementInfo
- Publication number
- JPS6450480A JPS6450480A JP20677287A JP20677287A JPS6450480A JP S6450480 A JPS6450480 A JP S6450480A JP 20677287 A JP20677287 A JP 20677287A JP 20677287 A JP20677287 A JP 20677287A JP S6450480 A JPS6450480 A JP S6450480A
- Authority
- JP
- Japan
- Prior art keywords
- type
- light emitting
- emitting element
- type sic
- blue light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/826—Materials of the light-emitting regions comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
Landscapes
- Led Devices (AREA)
Abstract
PURPOSE:To prevent an emitted light wavelength from shifting to a longer wavelength side and output from decreasing by composing an SiC blue light emitting element of a P-type SiC layer doped with aluminum as a P-type impurity and an N-type SiC layer doped with arsenic as an N-type impurity. CONSTITUTION:A light emitting diode is composed, for example, at a P-type SiC layer 2, of a P-type SiC crystal doped with aluminum of 1.5X10<18>/cm<2> of carrier concentration, and at an N-type SiC layer 3 of an N-type SiC crystal doped with arsenic of 4X10<17>/cm<2> of carrier concentration. Thus, the carrier concentrations of the P-type and N-type SiC layers can be enhanced, and an SiC blue light emitting element which prevents its wavelength from shifting and its output from decreasing for a long time energization can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20677287A JPS6450480A (en) | 1987-08-20 | 1987-08-20 | Sic blue light emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20677287A JPS6450480A (en) | 1987-08-20 | 1987-08-20 | Sic blue light emitting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6450480A true JPS6450480A (en) | 1989-02-27 |
Family
ID=16528834
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20677287A Pending JPS6450480A (en) | 1987-08-20 | 1987-08-20 | Sic blue light emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6450480A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011083552A1 (en) * | 2010-01-08 | 2011-07-14 | 三菱電機株式会社 | Epitaxial wafer and semiconductor element |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5099683A (en) * | 1973-12-28 | 1975-08-07 |
-
1987
- 1987-08-20 JP JP20677287A patent/JPS6450480A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5099683A (en) * | 1973-12-28 | 1975-08-07 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011083552A1 (en) * | 2010-01-08 | 2011-07-14 | 三菱電機株式会社 | Epitaxial wafer and semiconductor element |
| JP5430677B2 (en) * | 2010-01-08 | 2014-03-05 | 三菱電機株式会社 | Epitaxial wafer and semiconductor device |
| US9059193B2 (en) | 2010-01-08 | 2015-06-16 | Mitsubishi Electric Corporation | Epitaxial wafer and semiconductor element |
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