JPS6450501A - Manufacture of thin film thermistor - Google Patents
Manufacture of thin film thermistorInfo
- Publication number
- JPS6450501A JPS6450501A JP20647587A JP20647587A JPS6450501A JP S6450501 A JPS6450501 A JP S6450501A JP 20647587 A JP20647587 A JP 20647587A JP 20647587 A JP20647587 A JP 20647587A JP S6450501 A JPS6450501 A JP S6450501A
- Authority
- JP
- Japan
- Prior art keywords
- film
- gas atmosphere
- plasma
- substrate
- composite oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010408 film Substances 0.000 abstract 6
- 239000000758 substrate Substances 0.000 abstract 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 4
- 239000002131 composite material Substances 0.000 abstract 4
- 239000007789 gas Substances 0.000 abstract 4
- 238000004544 sputter deposition Methods 0.000 abstract 3
- 229910052786 argon Inorganic materials 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 230000001590 oxidative effect Effects 0.000 abstract 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 229910001882 dioxygen Inorganic materials 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
Landscapes
- Thermistors And Varistors (AREA)
Abstract
PURPOSE:To perform the formation of a film and a heat treatment at a low temperature, to achieve the formation of the film on a substrate of all materials and to obtain a method having a fast film forming velocity by depositing a composite oxide thin film by high frequency sputtering in an Ar atmosphere with a specific composite oxide target, and then plasma-treating in an oxidative gas atmosphere. CONSTITUTION:After a composite oxide thin film 2 is deposited by high frequency sputtering on a substrate 1 in an argon gas atmosphere with a composite oxide target made of oxide to which Ni, Fe, Cu, etc., are added to Mn, Co, the film 2 is plasma-treated to be oxidized in an oxidative gas atmosphere. For example, a target made of sintered oxide like that having, for example, 3:2:1 of Mn:Co:Ni is employed, and the film 2 is formed on an alumina substrate 1 under the conditions of 300 deg.C of substrate temperature and 5mum/hr of film growing speed in an argon gas atmosphere by a high frequency sputtering device. Then, a plasma reactor is employed, a plasma is generated in an oxygen gas atmosphere of 0.5 Torr, a plasma treating is conducted without heating the substrate, and electrodes 3 are then formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20647587A JP2587426B2 (en) | 1987-08-21 | 1987-08-21 | Manufacturing method of thin film thermistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20647587A JP2587426B2 (en) | 1987-08-21 | 1987-08-21 | Manufacturing method of thin film thermistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6450501A true JPS6450501A (en) | 1989-02-27 |
| JP2587426B2 JP2587426B2 (en) | 1997-03-05 |
Family
ID=16523992
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20647587A Expired - Fee Related JP2587426B2 (en) | 1987-08-21 | 1987-08-21 | Manufacturing method of thin film thermistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2587426B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6368734B1 (en) | 1998-11-06 | 2002-04-09 | Murata Manufacturing Co., Ltd. | NTC thermistors and NTC thermistor chips |
| JP2008244018A (en) * | 2007-03-26 | 2008-10-09 | Ulvac Japan Ltd | Manufacturing method of semiconductor device |
| CN111436166A (en) * | 2019-01-11 | 2020-07-21 | 东芝照明技术株式会社 | Heater and image forming apparatus |
-
1987
- 1987-08-21 JP JP20647587A patent/JP2587426B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6368734B1 (en) | 1998-11-06 | 2002-04-09 | Murata Manufacturing Co., Ltd. | NTC thermistors and NTC thermistor chips |
| JP2008244018A (en) * | 2007-03-26 | 2008-10-09 | Ulvac Japan Ltd | Manufacturing method of semiconductor device |
| CN111436166A (en) * | 2019-01-11 | 2020-07-21 | 东芝照明技术株式会社 | Heater and image forming apparatus |
| JP2020112701A (en) * | 2019-01-11 | 2020-07-27 | 東芝ライテック株式会社 | Heater and image forming device |
| CN111436166B (en) * | 2019-01-11 | 2024-11-22 | 东芝照明技术株式会社 | Heater and image forming device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2587426B2 (en) | 1997-03-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |