JPS645088A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS645088A
JPS645088A JP62159658A JP15965887A JPS645088A JP S645088 A JPS645088 A JP S645088A JP 62159658 A JP62159658 A JP 62159658A JP 15965887 A JP15965887 A JP 15965887A JP S645088 A JPS645088 A JP S645088A
Authority
JP
Japan
Prior art keywords
wavelength
phase control
type phase
control region
laser type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62159658A
Other languages
Japanese (ja)
Inventor
Kenji Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62159658A priority Critical patent/JPS645088A/en
Publication of JPS645088A publication Critical patent/JPS645088A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1057—Comprising an active region having a varying composition or cross-section in a specific direction varying composition along the optical axis

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To reduce the fluctuation of an oscillated wavelength at the time of direct modulation by a method wherein, in a semiconductor laser which has a waveguide layer with a corrugation of a Bragg wavelength which is a 1st wayelength and an active layer, a laser type phase control region whose oscillated wavelength is different from the 1st wavelength is provided. CONSTITUTION:A modulation region 40 in which the oscillation of a 1st wavelength is induced and a laser type phase control region 41 in which the oscillation of a 2nd wavelength is induced are coupled along the direction of a light axis. A bias current is injected into the laser type phase control region 41 to induce an oscillating state. Further, by applying a suitable control current to the laser type phase control region 41, the carrier density in the active layer 3 of the laser type phase control region 41 is changed with a high speed. With this constitution, the equivalent refractive index of the laser type phase control region 41 is controlled and the fluctuation of the refractive index of an active layer 4 created when the intensity of the light oscillated in the modulation region 40 is modulated is compensated so that the fluctuation of the oscillated wavelength can be suppressed.
JP62159658A 1987-06-29 1987-06-29 Semiconductor laser device Pending JPS645088A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62159658A JPS645088A (en) 1987-06-29 1987-06-29 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62159658A JPS645088A (en) 1987-06-29 1987-06-29 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS645088A true JPS645088A (en) 1989-01-10

Family

ID=15698515

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62159658A Pending JPS645088A (en) 1987-06-29 1987-06-29 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS645088A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990009047A1 (en) * 1989-02-02 1990-08-09 Fujitsu Limited Integrated optical semiconductor device and method of producing the same
JPH0476979A (en) * 1990-07-19 1992-03-11 Kokusai Denshin Denwa Co Ltd <Kdd> Semiconductor element using inverted alpha parameter sign
JPH04137778A (en) * 1990-09-28 1992-05-12 Nec Corp Direct modulation method for semiconductor laser
JPH057056A (en) * 1990-11-21 1993-01-14 Toshiba Corp Semiconductor laser device and manufacturing method thereof
JPH05503180A (en) * 1989-12-13 1993-05-27 バイオ―ロジック・システムズ・コーポレーション Computer-assisted sleep analysis
JP2010278395A (en) * 2009-06-01 2010-12-09 Nippon Telegr & Teleph Corp <Ntt> Direct modulation semiconductor laser

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990009047A1 (en) * 1989-02-02 1990-08-09 Fujitsu Limited Integrated optical semiconductor device and method of producing the same
JPH05503180A (en) * 1989-12-13 1993-05-27 バイオ―ロジック・システムズ・コーポレーション Computer-assisted sleep analysis
JPH0476979A (en) * 1990-07-19 1992-03-11 Kokusai Denshin Denwa Co Ltd <Kdd> Semiconductor element using inverted alpha parameter sign
JPH04137778A (en) * 1990-09-28 1992-05-12 Nec Corp Direct modulation method for semiconductor laser
JPH057056A (en) * 1990-11-21 1993-01-14 Toshiba Corp Semiconductor laser device and manufacturing method thereof
JP2010278395A (en) * 2009-06-01 2010-12-09 Nippon Telegr & Teleph Corp <Ntt> Direct modulation semiconductor laser

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